F59D4G81XB-45BCG2X

4Gb NAND Flash
Part Description

SLC NAND Flash, 4.295 Gbit, 1.8V, x8, 45 ns, 67-ball BGA

Quantity 231 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageBGA-67Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size4 GbitAccess Time25 nsGradeCommercial
Clock FrequencyN/AVoltage1.7V ~ 1.95VMemory TypeNon-Volatile
Operating Temperature0°C – 70°CWrite Cycle Time Word Page200 µsPackaging67-BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization512M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.00.71

Overview of F59D4G81XB-45BCG2X – SLC NAND Flash, 4.295 Gbit, 1.8V, x8, 45 ns, 67-ball BGA

The F59D4G81XB-45BCG2X is a 4.295 Gbit single-level cell (SLC) NAND flash memory device organized as 512M × 8. It implements an asynchronous, parallel 8-bit I/O interface and is ONFI 1.0-compliant, providing a low-pin-count hardware interface for embedded non-volatile storage in commercial-grade designs.

Designed for commercial applications, this device combines SLC endurance and long uncycled data retention with a compact 67-ball BGA package and a 1.8 V nominal supply (1.7 V–1.95 V), making it suitable for a wide range of embedded storage and firmware/boot code applications that require reliable non-volatile memory.

Key Features

  • Memory Core 4.295 Gbit SLC NAND organized as 512M × 8 with a page size of 4,352 bytes (4,096 + 256) and a block size of 64 pages.
  • Performance & Timing 45 ns device speed grade with a documented access time of 25 ns. Read and program characteristics include read page—30 μs (max) with on-die ECC disabled and 170 μs (max) with ECC enabled; program page—200 μs (typ) with ECC disabled and 240 μs (typ) with ECC enabled; erase block—2 ms (typ).
  • Interface Asynchronous parallel 8-bit I/O with standard NAND control signals (CE#, CLE, ALE, WE#, RE#) and Ready/Busy# (R/B#) for hardware operation status detection. ONFI 1.0-compliant protocol.
  • Reliability & Endurance SLC endurance rated to 100,000 program/erase cycles and uncycled data retention specified to 10 years (24/7 @ 70°C), with JESD47G-compliant data retention characteristics.
  • Embedded ECC & Data Management 8-bit internal ECC is available (disabled by default and can be toggled via SET FEATURE). Features include permanent block locking (blocks 47:0), one-time programmable (OTP) mode, block lock, internal data move, and read unique ID.
  • Power & Protection 1.8 V nominal supply range (1.7 V–1.95 V) and hardware write protection via WP# (write protect entire device). RESET (FFh) is required as first command after power-on unless alternate factory initialization is arranged.
  • Package & Temperature Pb‑free 67-ball BGA (BGA-67) surface-mount package with a commercial operating temperature range of 0 °C to 70 °C. RoHS compliant.

Typical Applications

  • Commercial Embedded Systems — Non-volatile code and data storage where SLC endurance and long retention are required within a 0 °C–70 °C operating range.
  • Firmware and Boot Storage — Compact 67-ball BGA footprint and parallel ONFI-compliant interface for boot code, firmware images, and system-level storage.
  • Industrial & Consumer Electronics (Commercial Grade) — Reliable program/erase endurance and on-die ECC options for commercial-grade storage tasks in consumer and light-industrial devices.
  • Data Logging and Configuration Storage — Durable SLC technology and block-level locking/OTP support for long-term configuration and logging data retention.

Unique Advantages

  • SLC Endurance: 100,000 program/erase cycles provide durability for frequent update scenarios compared to multi-level cell alternatives.
  • Long Uncycled Retention: Specified for 10 years of uncycled data retention at 70 °C, supporting long-term archival needs in commercial equipment.
  • Flexible ECC Management: 8-bit internal ECC is available and can be enabled or disabled via SET FEATURE, allowing designers to choose device-managed error correction or host-managed ECC.
  • Standardized Interface: ONFI 1.0 compliance and a multiplexed 8-bit bus simplify integration and future density migration without board redesign.
  • Compact Package: 67-ball BGA (BGA-67) surface-mount package minimizes PCB area while retaining full parallel NAND functionality.
  • Commercial Voltage Compatibility: 1.8 V nominal operation (1.7 V–1.95 V) aligns with common low-voltage system domains for efficient power integration.

Why Choose F59D4G81XB-45BCG2X?

The F59D4G81XB-45BCG2X combines SLC NAND endurance and long-term data retention with ONFI-compliant parallel I/O and a compact BGA-67 footprint. Its documented timing, programmable ECC options, block management features, and commercial-grade operating range make it well suited for embedded storage, firmware, and configuration memory in commercial products.

For designs that require a robust, low-pin-count non-volatile memory solution with configurable ECC, high P/E cycle endurance, and clear timing and operational specifications, the F59D4G81XB-45BCG2X offers a practical balance of performance and reliability backed by RoHS compliance and documented device characteristics.

Request a quote or submit a sales inquiry to check availability, lead times, and pricing for the F59D4G81XB-45BCG2X.

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