F59D4G81KA-45TG2R
| Part Description |
SLC NAND Flash, 4Gbit, 1.8V, x8, 45ns, TSOPI-48 |
|---|---|
| Quantity | 155 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | TSOPI-48 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 4 Gbit | Access Time | 20 ns | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 1.7V ~ 1.95V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C – 70°C | Write Cycle Time Word Page | 400 µs | Packaging | 48-TSOPI | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 512M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59D4G81KA-45TG2R – SLC NAND Flash, 4Gbit, 1.8V, x8, 45ns, TSOPI-48
The F59D4G81KA-45TG2R is a 4.295 Gbit single-level cell (SLC) NAND flash memory organized as 512M × 8. It operates from a low-voltage 1.7 V–1.95 V supply (nominal 1.8 V) and provides parallel x8 command/address/data multiplexed I/O in a 48-pin TSOPI surface-mount package.
Designed for high-density non-volatile storage in commercial applications, this device targets embedded file storage and boot-from-NAND use cases where fast read cycles, robust program/erase endurance, and hardware protection during power transitions are required.
Key Features
- Memory Architecture 4.295 Gbit SLC NAND organized as 512M × 8 with a data register and page size of 4K + 256 bytes and block size of 64 pages (256K + 16K bytes).
- Performance Read cycle listed at 45 ns (ordering speed) and an Access Time entry of 20 ns in specifications; random page read up to 25 µs (max).
- Program & Erase Timing Typical page program time is 400 µs (700 µs max) and block erase typical 3.5 ms (10 ms max), enabling predictable program/erase behavior for embedded storage management.
- Power Low-voltage operation from 1.7 V to 1.95 V (VCC = 1.8 V nominal) suitable for 1.8 V system domains.
- Reliability & Data Integrity Endurance rated at 60K program/erase cycles with uncycled data retention specified as 10 years at 55°C; ECC requirement specified as 8-bit per 512 bytes.
- Command & Operational Features Command/address/data multiplexed DQ port, automatic program/erase, cache program/read, copy-back, EDO mode, boot-from-NAND support and automatic memory download options.
- Protection & Robustness Hardware data protection with program/erase lockout during power transitions and automatic page 0 read at power-up option.
- Package & Grade Surface-mount TSOPI-48 package (12 mm × 20 mm body, 0.5 mm pitch) and commercial operating temperature range 0°C to 70°C.
Typical Applications
- Solid State File Storage — High-density non-volatile storage for embedded devices that require reliable program/erase cycles and large block/page organization.
- Digital Imaging — Image file memory for still cameras and similar devices where large page sizes and cache read/program operations support sustained data throughput.
- Audio/Voice Recording — On-device voice or audio storage using automatic program and erase features for sequential and block writes.
- Boot & Embedded Storage — Boot-from-NAND and automatic memory download support for systems that require flash-based boot code and firmware storage.
Unique Advantages
- Low-Voltage Operation: Supports 1.7 V–1.95 V supplies (nominal 1.8 V), aligning with common low-voltage embedded system designs.
- SLC Endurance: Specified 60K program/erase cycles, providing durable write/erase life for demanding write applications.
- Large Page & Block Architecture: 4K + 256 byte pages and 64-page blocks reduce management overhead for large file and streaming storage use cases.
- Built-In Data Protection: Hardware lockout during power transitions and ECC guidance (8-bit/512-byte) help maintain data integrity across power events and long-term storage.
- Predictable Timing: Typical page program time of 400 µs and documented block erase times support deterministic performance planning.
- Embedded-Friendly Feature Set: Command/address/data multiplexed I/O, cache program/read, copy-back and boot-from-NAND enable flexible integration into firmware and boot flows.
Why Choose F59D4G81KA-45TG2R?
The F59D4G81KA-45TG2R positions itself as a commercially graded SLC NAND solution that balances low-voltage operation, SLC endurance, and an embedded-focused feature set for reliable non-volatile storage. Its large page/block geometry, hardware protection during power transitions, and explicit ECC guidance make it suited to designs requiring sustained write/erase cycles and long-term data retention.
This device is ideal for engineers designing embedded storage, imaging, audio recording, and bootable flash systems who need a hard-specified SLC NAND in a 48-pin TSOPI package with documented timing, endurance, and power requirements.
Request a quote or submit a purchase inquiry today to obtain pricing, lead times, and sample availability for the F59D4G81KA-45TG2R.
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