F59D4G81KA-45TG2R

4Gb NAND Flash
Part Description

SLC NAND Flash, 4Gbit, 1.8V, x8, 45ns, TSOPI-48

Quantity 155 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageTSOPI-48Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size4 GbitAccess Time20 nsGradeCommercial
Clock FrequencyN/AVoltage1.7V ~ 1.95VMemory TypeNon-Volatile
Operating Temperature0°C – 70°CWrite Cycle Time Word Page400 µsPackaging48-TSOPI
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization512M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.00.71

Overview of F59D4G81KA-45TG2R – SLC NAND Flash, 4Gbit, 1.8V, x8, 45ns, TSOPI-48

The F59D4G81KA-45TG2R is a 4.295 Gbit single-level cell (SLC) NAND flash memory organized as 512M × 8. It operates from a low-voltage 1.7 V–1.95 V supply (nominal 1.8 V) and provides parallel x8 command/address/data multiplexed I/O in a 48-pin TSOPI surface-mount package.

Designed for high-density non-volatile storage in commercial applications, this device targets embedded file storage and boot-from-NAND use cases where fast read cycles, robust program/erase endurance, and hardware protection during power transitions are required.

Key Features

  • Memory Architecture 4.295 Gbit SLC NAND organized as 512M × 8 with a data register and page size of 4K + 256 bytes and block size of 64 pages (256K + 16K bytes).
  • Performance Read cycle listed at 45 ns (ordering speed) and an Access Time entry of 20 ns in specifications; random page read up to 25 µs (max).
  • Program & Erase Timing Typical page program time is 400 µs (700 µs max) and block erase typical 3.5 ms (10 ms max), enabling predictable program/erase behavior for embedded storage management.
  • Power Low-voltage operation from 1.7 V to 1.95 V (VCC = 1.8 V nominal) suitable for 1.8 V system domains.
  • Reliability & Data Integrity Endurance rated at 60K program/erase cycles with uncycled data retention specified as 10 years at 55°C; ECC requirement specified as 8-bit per 512 bytes.
  • Command & Operational Features Command/address/data multiplexed DQ port, automatic program/erase, cache program/read, copy-back, EDO mode, boot-from-NAND support and automatic memory download options.
  • Protection & Robustness Hardware data protection with program/erase lockout during power transitions and automatic page 0 read at power-up option.
  • Package & Grade Surface-mount TSOPI-48 package (12 mm × 20 mm body, 0.5 mm pitch) and commercial operating temperature range 0°C to 70°C.

Typical Applications

  • Solid State File Storage — High-density non-volatile storage for embedded devices that require reliable program/erase cycles and large block/page organization.
  • Digital Imaging — Image file memory for still cameras and similar devices where large page sizes and cache read/program operations support sustained data throughput.
  • Audio/Voice Recording — On-device voice or audio storage using automatic program and erase features for sequential and block writes.
  • Boot & Embedded Storage — Boot-from-NAND and automatic memory download support for systems that require flash-based boot code and firmware storage.

Unique Advantages

  • Low-Voltage Operation: Supports 1.7 V–1.95 V supplies (nominal 1.8 V), aligning with common low-voltage embedded system designs.
  • SLC Endurance: Specified 60K program/erase cycles, providing durable write/erase life for demanding write applications.
  • Large Page & Block Architecture: 4K + 256 byte pages and 64-page blocks reduce management overhead for large file and streaming storage use cases.
  • Built-In Data Protection: Hardware lockout during power transitions and ECC guidance (8-bit/512-byte) help maintain data integrity across power events and long-term storage.
  • Predictable Timing: Typical page program time of 400 µs and documented block erase times support deterministic performance planning.
  • Embedded-Friendly Feature Set: Command/address/data multiplexed I/O, cache program/read, copy-back and boot-from-NAND enable flexible integration into firmware and boot flows.

Why Choose F59D4G81KA-45TG2R?

The F59D4G81KA-45TG2R positions itself as a commercially graded SLC NAND solution that balances low-voltage operation, SLC endurance, and an embedded-focused feature set for reliable non-volatile storage. Its large page/block geometry, hardware protection during power transitions, and explicit ECC guidance make it suited to designs requiring sustained write/erase cycles and long-term data retention.

This device is ideal for engineers designing embedded storage, imaging, audio recording, and bootable flash systems who need a hard-specified SLC NAND in a 48-pin TSOPI package with documented timing, endurance, and power requirements.

Request a quote or submit a purchase inquiry today to obtain pricing, lead times, and sample availability for the F59D4G81KA-45TG2R.

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