F59D4G81KA-45TIG2R
| Part Description |
SLC NAND Flash, 4Gbit, 1.8V, x8, Industrial |
|---|---|
| Quantity | 1,599 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | TSOPI-48 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 4 Gbit | Access Time | 20 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 1.7V ~ 1.95V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 400 µs | Packaging | 48-TSOPI | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 512M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59D4G81KA-45TIG2R – SLC NAND Flash, 4Gbit, 1.8V, x8, Industrial
The F59D4G81KA-45TIG2R is a 4.295 Gbit single-level cell (SLC) NAND Flash memory organized as 512M × 8bits. Built for industrial applications, it provides high-density non-volatile storage in a 48‑pin TSOPI surface-mount package and is JEDEC qualified.
Its architecture supports large page and block operations, hardware data protection and boot-from-NAND capability, making it suitable for solid-state file storage, image and voice recording, firmware storage and other embedded storage applications that require robust, long-life flash memory.
Key Features
- Memory Architecture — Organized as 512M × 8 with a page size of (4K + 256) bytes and block size of 64 pages (256K + 16K) bytes; single plane with 2048 blocks per die.
- Flash Technology — SLC NAND with automatic program and erase operations and 1bit/cell reliability characteristics.
- Performance — Read cycle specified at 45 ns and a listed access time of 20 ns; random read up to 25 µs (max); supports cache read and cache program operations and copy‑back for higher throughput.
- Program & Erase Timing — Typical page program time 400 µs (700 µs max); block erase typical 3.5 ms (10 ms max); write cycle time per word/page 400 µs.
- Endurance & Retention — Endurance rated at 60K program/erase cycles with uncycled data retention of 10 years at 55 °C; ECC requirement specified as 8 bits per 512 bytes.
- Interface & Control — Parallel NAND interface with command/address/data multiplexed on the DQ port; includes hardware data protection and program/erase lockout during power transitions, CLE/ALE, R/B# and WP# support.
- Power — Low-voltage 1.8 V operation with an allowable supply range of 1.7 V to 1.95 V.
- Package & Temperature — Available in 48‑pin TSOPI (TSOPI‑48) surface‑mount package; industrial operating temperature range −40 °C to 85 °C; Pb‑free and RoHS compliant.
Typical Applications
- Solid-State File Storage — High-density SLC pages and blocks provide reliable non-volatile storage for embedded file systems and removable storage solutions.
- Digital Imaging — Large page size and block structure are well suited for image file storage in still cameras and imaging modules.
- Voice Recording & Media — Page program and cache operations enable efficient storage for voice recorders and audio logging devices.
- Embedded Boot & Firmware Storage — Boot-from-NAND support and automatic memory download features simplify system boot and firmware update workflows.
- Industrial Data Logging — JEDEC qualification, industrial temperature range and long data retention make the device appropriate for industrial logging and firmware retention.
Unique Advantages
- High Endurance: 60K P/E cycles provide longevity for frequent write/erase applications and reduce maintenance cycles.
- Long-Term Data Retention: Specified 10-year uncycled retention at 55 °C supports archival and long-life storage requirements.
- Low-Voltage Operation: 1.7 V–1.95 V supply reduces system power domain complexity for low-voltage platforms.
- Fast Read and Program Options: 45 ns read cycle, cache program and cache read operations improve effective throughput for sequential and random access patterns.
- Embedded-Friendly Interface: Parallel DQ multiplexed command/address/data interface and boot-from-NAND support simplify integration into embedded systems.
- Industrial Qualification & Packaging: JEDEC qualified device in a 48‑pin TSOPI surface-mount package rated for −40 °C to 85 °C operation and RoHS compliant.
Why Choose F59D4G81KA-45TIG2R?
The F59D4G81KA-45TIG2R combines SLC reliability, industrial temperature operation and JEDEC qualification in a compact TSOPI package, offering a balanced solution for embedded storage designs that require durable, long-life flash. Its combination of large page/block architecture, cache operations and hardware protection features supports efficient system boot, file storage and firmware update flows.
This part is suited for designers and procurement teams targeting industrial and embedded applications that demand verified endurance, long retention and a proven parallel NAND interface with broad integration options.
Request a quote or submit an inquiry for pricing and availability for the F59D4G81KA-45TIG2R to receive lead-time and ordering details.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
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