F59D4G81XB-45BG2X

4Gb NAND Flash
Part Description

SLC NAND Flash, 4Gbit, (512M×8), 1.8V, x8, 45ns, 63-ball BGA

Quantity 738 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageBGA-63Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size4 GbitAccess Time25 nsGradeCommercial
Clock FrequencyN/AVoltage1.7V ~ 1.95VMemory TypeNon-Volatile
Operating Temperature0°C – 70°CWrite Cycle Time Word Page200 µsPackaging63-BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization512M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.00.71

Overview of F59D4G81XB-45BG2X – SLC NAND Flash, 4Gbit, (512M×8), 1.8V, x8, 45ns, 63-ball BGA

The F59D4G81XB-45BG2X is a 4 Gbit single-level cell (SLC) NAND flash memory organized as 512M × 8 with a 1.8 V supply range (1.7 V–1.95 V). Designed for parallel asynchronous I/O, it implements a highly multiplexed 8-bit bus and a standard control signal set (CE#, CLE, ALE, WE#, RE#) to minimize pin count and simplify board-level upgrades across densities.

With ONFI 1.0 compliance, selectable on-die ECC, and SLC endurance characteristics, this device targets commercial applications that require reliable non-volatile storage, long retention, and flexible system integration in a compact 63-ball BGA package.

Key Features

  • Memory Core Single-level cell (SLC) NAND Flash organized as 512M × 8 for a device size of 4 Gbit (4.295 Gbit nominal).
  • Page and Block Organization 4,352-byte page size (4,096 + 256 bytes) and 64 pages per block; single plane organization.
  • Performance 45 ns speed grade (–45 BG2X). Read page times up to 170 µs with on-die ECC enabled and 30 µs with ECC disabled; program page typical 200 µs (without on-die ECC) and 240 µs (with on-die ECC); erase block typical 2 ms.
  • Interface and Protocol Parallel 8-bit I/O with ONFI 1.0-compliant command set and advanced commands including program/read cache modes and internal data move within a plane.
  • Data Integrity and ECC 8-bit internal ECC provided and disabled by default; ECC can be toggled via the SET FEATURE command. Device ships with Block 0 valid with ECC enabled.
  • Reliability and Endurance Endurance rated to 100,000 program/erase cycles and data retention compliant with JESD47G; uncycled data retention of 10 years at 70°C.
  • Control and Security Features Ready/Busy# (R/B#) and operation status byte for hardware and software operation completion detection, WP# for device write protection, programmable drive strength, permanent block locking (blocks 47:0) and one-time programmable (OTP) mode.
  • Power and Temperature Low-voltage operation at 1.8 V nominal (operating range 1.7 V–1.95 V). Commercial operating temperature range 0°C to 70°C.
  • Package and Mounting Surface-mount BGA package, 63-ball BGA (BGA-63) for compact board integration and reliable solder connections. RoHS compliant.

Typical Applications

  • Embedded storage Non-volatile program and data storage where SLC endurance (100,000 P/E cycles) and long retention (10 years at 70°C) are required.
  • Firmware and boot storage Storing firmware images and boot code using the device’s parallel 8-bit interface and ONFI-compliant command set for reliable boot sequences.
  • Data logging and update storage Systems that require frequent program/erase cycles and dependable retention benefit from the device’s endurance and programmable block lock/OTP features.
  • Compact system designs Space-constrained commercial products that need a small-footprint BGA solution with standard control signals and a low-voltage 1.8 V supply.

Unique Advantages

  • Selectable on-die ECC: Enables designers to choose internal ECC for improved data integrity or disable it for host-managed error correction.
  • SLC endurance and long retention: 100,000 program/erase cycles plus JESD47G-compliant retention and 10-year uncycled retention at 70°C provide predictability for lifecycle planning.
  • ONFI 1.0 compliance: Standardized command set and interface simplify integration and support migration across compatible NAND devices.
  • Compact BGA package: 63-ball BGA (BGA-63) enables high-density board layouts while preserving a low pin-count asynchronous interface.
  • Flexible protection and management: Hardware WP#, R/B# status, operation status byte, permanent block locking, and OTP mode support secure and controlled memory use.
  • Low-voltage operation: 1.7 V–1.95 V supply range supports designs constrained to 1.8 V domains.

Why Choose F59D4G81XB-45BG2X?

The F59D4G81XB-45BG2X combines SLC endurance, ONFI 1.0 compliance, and flexible on-die ECC to deliver a reliable non-volatile storage element for commercial embedded systems. Its organized 512M × 8 architecture, defined page/block geometry, and performance characteristics (program/read/erase timings) make it suitable for applications that require deterministic program/erase behavior and long-term data retention.

Engineers and procurement teams implementing compact, low-voltage designs will find the 63-ball BGA footprint and standard parallel interface simplify board-level integration while preserving options for secure block management and programmable features. The device’s endurance and retention specifications support lifecycle planning and firmware management in production environments.

Request a quote or contact sales to discuss pricing, lead times, and availability for the F59D4G81XB-45BG2X.

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