F59D4G81XB-45TIAG2X

4Gb NAND Flash Auto.
Part Description

SLC NAND Flash, 4Gbit, 1.8V, x8, 45ns, Automotive

Quantity 1,670 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageTSOPI-48Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size4 GbitAccess Time25 nsGradeAutomotive
Clock FrequencyN/AVoltage1.7V ~ 1.95VMemory TypeNon-Volatile
Operating Temperature-40°C – 105°CWrite Cycle Time Word Page200 µsPackaging48-TSOPI
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization512M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationAEC-Q100ECCNEAR99HTS Code8542.32.00.71

Overview of F59D4G81XB-45TIAG2X – SLC NAND Flash, 4Gbit, 1.8V, x8, 45ns, Automotive

The F59D4G81XB-45TIAG2X is a 4.295 Gbit single-level cell (SLC) NAND Flash device organized as 512M × 8. It provides high-reliability non-volatile storage with a parallel 8-bit interface and ONFI 1.0–compliant command support for asynchronous I/O operations.

Designed for automotive use, the device is AEC‑Q100 qualified and rated for operation from −40 °C to 105 °C, making it suitable for systems that require robust, long-life embedded storage at 1.8 V supply levels.

Key Features

  • Memory Capacity & Organization — 4.295 Gbit capacity arranged as 512M × 8 with a 4,352‑byte page format (4,096 bytes + 256 bytes spare) and 64 pages per block.
  • SLC NAND Technology — Single-level cell architecture providing high endurance and data retention characteristics (endurance: 100,000 program/erase cycles; uncycled data retention: 10 years @ 70 °C).
  • Performance — Asynchronous I/O performance with program and read timings reported in the datasheet (program page: ~200 µs typical without on‑die ECC; read page: up to 170 µs with on‑die ECC enabled, 30 µs with it disabled).
  • Interface & Command Set — Parallel 8‑bit I/O with standard NAND control signals (CE#, CLE, ALE, WE#, RE#) and support for ONFI NAND Flash Protocol and advanced command features including page cache modes and internal data move.
  • Configurable ECC — 8‑bit internal ECC available and can be enabled or disabled via SET FEATURE command; Block 0 is shipped from factory with ECC enabled.
  • Power & Voltage — Low‑voltage operation at 1.8 V (specified supply range 1.7 V to 1.95 V) for compatibility with common embedded systems power rails.
  • Package & Temperature — Surface-mount TSOPI-48 package (12 mm × 20 mm, 0.5 mm pitch) and operating temperature range −40 °C to 105 °C for automotive environments.
  • Reliability & Lifecycle — AEC‑Q100 qualification and JESD47G‑compliant data retention guidance included in the device specification.

Typical Applications

  • Automotive electronic systems — AEC‑Q100 qualification and wide operating temperature make the device suitable for automotive storage needs that require long-term data retention and endurance.
  • Embedded non-volatile storage — Use as firmware, parameter storage, or application data storage where SLC endurance and retention are required.
  • Systems requiring 1.8 V operation — Devices and boards operating on 1.8 V supply rails can integrate this NAND Flash for compact, low-voltage storage.

Unique Advantages

  • AEC‑Q100 qualification: Engineered and qualified for automotive applications, supporting designs that require industry-standard reliability validation.
  • SLC endurance: 100,000 program/erase cycles deliver a long service life for write‑intensive embedded storage use cases.
  • Configurable on‑die ECC: Built‑in 8‑bit ECC can be toggled to match system error‑management strategies and improve data integrity.
  • Flexible NAND feature set: ONFI 1.0 compliance, page and read cache modes, block lock/OTP capabilities and internal data move operations simplify integration and firmware management.
  • Automotive temperature range: Guaranteed operation from −40 °C to 105 °C for deployment in temperature‑challenging environments.
  • Compact surface-mount package: TSOPI‑48 (12 mm × 20 mm) offers a low‑pin‑count footprint for board-level density and mechanical robustness.

Why Choose F59D4G81XB-45TIAG2X?

The F59D4G81XB-45TIAG2X positions itself as a purpose-built SLC NAND Flash option for applications that demand reliable, long-life non-volatile storage at 1.8 V. With AEC‑Q100 qualification, configurable on‑die ECC, and proven SLC endurance, it supports designs that require predictable lifecycle behavior and data integrity across a wide temperature range.

This device is suitable for engineers specifying automotive-grade embedded memory or any system that needs a compact TSOPI package, parallel 8‑bit interface, and the advanced NAND feature set defined by ONFI 1.0. The combination of endurance, retention, and configurable error management supports robust product lifecycles and system reliability.

Request a quote or submit an inquiry to our sales team to get pricing, lead‑time information, and technical support for integrating the F59D4G81XB-45TIAG2X into your next design.

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