F59D8G81KSA (2R)

The F59D8G81KSA (2R) from ESMT is an automotive-grade, non-volatile SLC NAND Flash memory device organized as 512M × 8 × 2 die for a total capacity of 8.59 Gbit. It provides a parallel memory interface and is specified for operation across an extended temperature range of −40 °C to 105 °C with AEC-Q100 qualification.

With a 1.8 V-class supply range (1.7 V–1.95 V), 20 ns access time and 400 µs word/page write cycle timing, this device targets embedded storage and firmware/data retention tasks in temperature- and reliability-sensitive vehicle environments.

Key Features

• Memory Core  SLC NAND Flash non-volatile memory organized as 512M × 8 × 2 die for a total of 8.59 Gbit capacity.
• Performance  20 ns access time and 400 µs write cycle time (word/page) to support typical non-volatile read/write operations.
• Interface  Parallel NAND interface for direct integration into systems that require parallel flash connectivity.
• Power  Operates from a 1.7 V–1.95 V supply window, compatible with 1.8 V system rails.
• Reliability & Qualification  Automotive grade device with AEC-Q100 qualification and RoHS compliance for regulatory and reliability requirements.
• Package & Mounting  Offered in surface-mount packages: 48-pin TSOPI or 63-ball BGA to accommodate board-level form-factor preferences.
• Temperature Range  Specified operation from −40 °C to 105 °C for use in elevated-temperature automotive environments.

Typical Applications

• Automotive data logging and storage  Non-volatile SLC NAND suited for in-vehicle data recording where AEC-Q100 qualification and extended temperature operation are required.
• Firmware and system image storage  On-board storage of firmware, boot images and critical code in vehicle electronic control units.
• Control unit non-volatile memory  Parallel NAND interface enables direct integration into control modules requiring robust flash storage.
• Harsh-environment embedded systems  RoHS-compliant, automotive-grade SLC memory for embedded designs operating across a wide temperature range.

Unique Advantages

• AEC-Q100 qualified:  Meets AEC-Q100 qualification for automotive-grade reliability and design confidence.
• Extended temperature operation:  Rated from −40 °C to 105 °C to support high-temperature automotive and harsh-environment applications.
• SLC NAND technology:  Single-level cell organization provides deterministic non-volatile storage characteristics suitable for firmware and data retention.
• 1.8 V-class operation:  1.7 V–1.95 V supply range aligns with low-voltage system rails common in automotive electronics.
• Flexible packaging:  Available in 48-pin TSOPI and 63-ball BGA surface-mount packages to suit different PCB layouts and assembly flows.
• Compact capacity:  8.59 Gbit density in a dual-die organization supports on-board storage without external memory stacks.

Why Choose F59D8G81KSA (2R)?

The F59D8G81KSA (2R) positions itself as a purpose-built SLC NAND Flash option from ESMT for designs that require automotive-grade reliability, extended temperature performance and a parallel interface for straightforward integration. Its AEC-Q100 qualification, RoHS compliance and 1.8 V-class operation make it suitable for vehicle electronic modules and other temperature-challenged embedded systems.

Designers seeking a compact 8.59 Gbit non-volatile memory with predictable SLC behavior, surface-mount package choices and defined timing (20 ns access, 400 µs write cycle) will find this device aligned with long-term robustness and board-level flexibility.

Request a quote or submit a pricing inquiry to evaluate F59D8G81KSA (2R) for your next automotive or harsh-environment embedded design.