F59D8G81KSA-45BIAG2R
| Part Description |
SLC NAND Flash, 8Gbit, 1.8V, x8, 45ns, 63-ball BGA, Automotive |
|---|---|
| Quantity | 1,139 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | BGA-63 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 8 Gbit | Access Time | 20 ns | Grade | Automotive | ||
| Clock Frequency | N/A | Voltage | 1.7V ~ 1.95V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 105°C | Write Cycle Time Word Page | 200 µs | Packaging | 63-BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 512M x 8 x 2 die | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | AEC-Q100 | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59D8G81KSA-45BIAG2R – SLC NAND Flash, 8Gbit, 1.8V, x8, 45ns, 63-ball BGA, Automotive
The F59D8G81KSA-45BIAG2R is an 8 Gbit SLC NAND Flash memory device organized as 512M × 8 × 2 die (stacked two 4Gb chips). It provides a parallel x8 interface and is specified for a 45 ns read cycle in a 63-ball BGA (BGA-63) package.
Designed for high-reliability applications, the device combines SLC endurance and long-term data retention with automotive-grade qualification (AEC-Q100), wide operating temperature, and system features such as boot-from-NAND support and hardware data protection.
Key Features
- Core / Memory: 8 Gbit SLC NAND organized as 512M × 8 × 2 die (stacked two 4Gb chips). Page size is (4K + 256) bytes with a data register of (4K + 256) bytes and block size of 64 pages = (256K + 16K) bytes.
- Performance: Specified 45 ns read cycle (–45 variant). Random read time up to 25 µs (max). Page program typical 400 µs (max 700 µs); block erase typical 3.5 ms (max 10 ms).
- Power: 1.8 V supply (VCC: 1.7 V ~ 1.95 V) for low-voltage system integration.
- Reliability & Endurance: Single-level cell (1 bit/cell) technology with 60K program/erase cycle endurance and uncycled data retention specified as 10 years at 55°C. ECC requirement: 8 bit per 512 bytes.
- System & Data Protection: Automatic program/erase operations, hardware data protection, program/erase lockout during power transitions, automatic page 0 read at power-up option, and boot-from-NAND support.
- Advanced Operations: Cache program and cache read, copy-back operation, EDO mode, page copy and automatic memory download for flexible system integration and performance optimization.
- Package & Temperature Range: 63-ball BGA (BGA-63) surface-mount package; operating temperature −40°C to 105°C; RoHS compliant.
- Qualification: Automotive grade with AEC‑Q100 qualification.
Typical Applications
- Solid-state file storage: High-density non-volatile storage for systems requiring SLC reliability and long retention.
- Embedded system boot storage: Supports boot-from-NAND and automatic page 0 read at power-up for reliable system start-up.
- Image and voice recording devices: Suited for still-camera image storage, voice recorders and similar applications that need large page/block organization and robust program/erase cycles.
- Automotive systems: AEC‑Q100 qualification and wide temperature operation make this device appropriate for automotive applications that require qualified non-volatile memory.
Unique Advantages
- Automotive-qualified reliability: AEC‑Q100 qualification and −40°C to 105°C operation support deployment in automotive environments.
- High endurance SLC technology: 60K program/erase cycles and 1 bit/cell architecture deliver predictable endurance for demanding write/erase workloads.
- Long-term data retention: Uncycled data retention of 10 years at 55°C provides stability for archived or infrequently updated data.
- System integration features: Boot-from-NAND, automatic memory download, cache program/read and copy-back enable streamlined firmware and data management in embedded designs.
- Flexible block and page architecture: Large page size ((4K + 256) bytes) and 64-page blocks simplify high-throughput data transfers and block management strategies.
- Low-voltage operation: 1.8 V nominal supply (1.7 V–1.95 V) eases integration with low-voltage digital systems.
Why Choose F59D8G81KSA-45BIAG2R?
The F59D8G81KSA-45BIAG2R positions itself as a robust SLC NAND Flash solution for designs that require endurance, long data retention, and automotive-grade qualification. Its stacked-die 8 Gbit organization, comprehensive system features (boot support, cache operations, copy-back), and specified program/erase timings deliver deterministic behavior for embedded and automotive applications.
This device is suited to engineers and procurement teams targeting reliable non-volatile storage with clear, traceable specifications for endurance, retention, temperature range, and voltage. Its combination of SLC reliability, AEC‑Q100 qualification, and system-level features supports long-term, maintainable designs in demanding environments.
If you would like pricing, availability or to submit a quote request for the F59D8G81KSA-45BIAG2R, please request a quote or contact sales to receive further details and ordering information.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A