F59D8G81KSA-45BIG2R

8Gb NAND Flash Ind.
Part Description

SLC NAND Flash, 8 Gbit, Industrial 63-ball BGA

Quantity 1,272 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusActive
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageBGA-63Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size8 GbitAccess Time20 nsGradeIndustrial
Clock FrequencyN/AVoltage1.7V ~ 1.95VMemory TypeNon-Volatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page200 µsPackaging63-BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization512M x 8 x 2 die
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.71

Overview of F59D8G81KSA-45BIG2R – SLC NAND Flash, 8 Gbit, Industrial 63-ball BGA

The F59D8G81KSA-45BIG2R is an 8 Gbit SLC NAND flash memory organized as two stacked 4 Gbit dies (512M × 8 × 2). Designed for industrial environments, it provides a parallel x8 interface and is offered in a 63-ball BGA package for compact surface-mount applications.

This device targets high-reliability non-volatile storage use cases such as solid-state file storage, voice and image capture memory, and embedded system boot storage. Key value comes from single-level cell (SLC) endurance and data retention characteristics coupled with industry-standard JEDEC qualification and RoHS compliance.

Key Features

  • Memory Architecture — 8 Gbit SLC NAND organized as 512M × 8 × 2 die, stacked for density and specific multi-die operations.
  • Page & Block Organization — Page size of (4K + 256) bytes with a 4352-byte data register; block size equals 64 pages = (256K + 16K) bytes, supporting efficient large-block erase/program operations.
  • Performance — Read cycle time 45 ns and random read latency up to 25 μs (max) for page accesses; page program typical 400 μs (max 700 μs); block erase typical 3.5 ms (max 10 ms).
  • Endurance & Retention — Rated for 60K program/erase cycles and 10-year uncycled data retention at 55 °C, suitable for long-term data storage in industrial systems.
  • Power — Operates from VCC 1.8 V with an allowable range of 1.7 V to 1.95 V.
  • Interface & Modes — Command/address/data multiplexed on DQ pins, x8 data bus, supports cache program/read, copy-back, EDO mode, boot-from-NAND support and automatic page 0 read at power-up option.
  • System Reliability — Hardware data protection features including program/erase lockout during power transitions; ECC requirement documented as 8 bit per 512 bytes.
  • Qualification & Compliance — JEDEC qualification and compliance to JESD47K specifications; RoHS compliant.
  • Package & Temperature — 63-ball BGA (9 mm × 11 mm body, 0.8 mm ball pitch), surface-mount package rated for industrial operation from −40 °C to 85 °C.

Typical Applications

  • Embedded storage for industrial controllers — Durable non-volatile storage for firmware, configuration data and event logging in harsh temperature ranges.
  • Solid-state file storage — Reliable SLC NAND for data-critical applications requiring high P/E endurance and long retention.
  • Boot and system firmware — Supports boot-from-NAND and automatic page 0 read at power-up for embedded systems and appliances.
  • Imaging and voice recorders — High-density page/block organization and fast program/read operations for still-image buffers and audio capture.

Unique Advantages

  • Stacked-die density: Two 4 Gbit dies stacked to deliver 8 Gbit capacity while enabling die-level operations.
  • SLC endurance and retention: 60K program/erase cycles and 10-year uncycled retention at 55 °C provide predictable life characteristics for industrial deployments.
  • System-friendly interface: Multiplexed command/address/data pins with x8 bus and cache operations simplify integration into existing parallel NAND controllers.
  • Power-transition protection: Hardware program/erase lockout during power transitions helps protect data integrity during unstable power events.
  • Industrial temperature range: Rated −40 °C to 85 °C for reliable operation across a wide range of environmental conditions.
  • JEDEC-qualified and RoHS compliant: Adheres to industry reliability standards and environmental requirements for commercial and industrial products.

Why Choose F59D8G81KSA-45BIG2R?

The F59D8G81KSA-45BIG2R positions itself as a robust SLC NAND solution for embedded and industrial designs that require predictable endurance, long-term data retention and JEDEC-level qualification. Its stacked-die organization and page/block architecture offer balanced capacity and efficient large-block operations for file storage, logging and firmware use.

Engineers and procurement teams will find this device appropriate for systems that demand industrial-temperature operation, hardware protections for power transitions, and industry-standard interfaces—providing a straightforward path to integrate reliable non-volatile storage into compact BGA assemblies.

Request a quote or submit a pricing and availability inquiry to evaluate the F59D8G81KSA-45BIG2R for your next design.

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