F59D8G81KSA-45BIG2R
| Part Description |
SLC NAND Flash, 8 Gbit, Industrial 63-ball BGA |
|---|---|
| Quantity | 1,272 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | BGA-63 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 8 Gbit | Access Time | 20 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 1.7V ~ 1.95V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 200 µs | Packaging | 63-BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 512M x 8 x 2 die | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59D8G81KSA-45BIG2R – SLC NAND Flash, 8 Gbit, Industrial 63-ball BGA
The F59D8G81KSA-45BIG2R is an 8 Gbit SLC NAND flash memory organized as two stacked 4 Gbit dies (512M × 8 × 2). Designed for industrial environments, it provides a parallel x8 interface and is offered in a 63-ball BGA package for compact surface-mount applications.
This device targets high-reliability non-volatile storage use cases such as solid-state file storage, voice and image capture memory, and embedded system boot storage. Key value comes from single-level cell (SLC) endurance and data retention characteristics coupled with industry-standard JEDEC qualification and RoHS compliance.
Key Features
- Memory Architecture — 8 Gbit SLC NAND organized as 512M × 8 × 2 die, stacked for density and specific multi-die operations.
- Page & Block Organization — Page size of (4K + 256) bytes with a 4352-byte data register; block size equals 64 pages = (256K + 16K) bytes, supporting efficient large-block erase/program operations.
- Performance — Read cycle time 45 ns and random read latency up to 25 μs (max) for page accesses; page program typical 400 μs (max 700 μs); block erase typical 3.5 ms (max 10 ms).
- Endurance & Retention — Rated for 60K program/erase cycles and 10-year uncycled data retention at 55 °C, suitable for long-term data storage in industrial systems.
- Power — Operates from VCC 1.8 V with an allowable range of 1.7 V to 1.95 V.
- Interface & Modes — Command/address/data multiplexed on DQ pins, x8 data bus, supports cache program/read, copy-back, EDO mode, boot-from-NAND support and automatic page 0 read at power-up option.
- System Reliability — Hardware data protection features including program/erase lockout during power transitions; ECC requirement documented as 8 bit per 512 bytes.
- Qualification & Compliance — JEDEC qualification and compliance to JESD47K specifications; RoHS compliant.
- Package & Temperature — 63-ball BGA (9 mm × 11 mm body, 0.8 mm ball pitch), surface-mount package rated for industrial operation from −40 °C to 85 °C.
Typical Applications
- Embedded storage for industrial controllers — Durable non-volatile storage for firmware, configuration data and event logging in harsh temperature ranges.
- Solid-state file storage — Reliable SLC NAND for data-critical applications requiring high P/E endurance and long retention.
- Boot and system firmware — Supports boot-from-NAND and automatic page 0 read at power-up for embedded systems and appliances.
- Imaging and voice recorders — High-density page/block organization and fast program/read operations for still-image buffers and audio capture.
Unique Advantages
- Stacked-die density: Two 4 Gbit dies stacked to deliver 8 Gbit capacity while enabling die-level operations.
- SLC endurance and retention: 60K program/erase cycles and 10-year uncycled retention at 55 °C provide predictable life characteristics for industrial deployments.
- System-friendly interface: Multiplexed command/address/data pins with x8 bus and cache operations simplify integration into existing parallel NAND controllers.
- Power-transition protection: Hardware program/erase lockout during power transitions helps protect data integrity during unstable power events.
- Industrial temperature range: Rated −40 °C to 85 °C for reliable operation across a wide range of environmental conditions.
- JEDEC-qualified and RoHS compliant: Adheres to industry reliability standards and environmental requirements for commercial and industrial products.
Why Choose F59D8G81KSA-45BIG2R?
The F59D8G81KSA-45BIG2R positions itself as a robust SLC NAND solution for embedded and industrial designs that require predictable endurance, long-term data retention and JEDEC-level qualification. Its stacked-die organization and page/block architecture offer balanced capacity and efficient large-block operations for file storage, logging and firmware use.
Engineers and procurement teams will find this device appropriate for systems that demand industrial-temperature operation, hardware protections for power transitions, and industry-standard interfaces—providing a straightforward path to integrate reliable non-volatile storage into compact BGA assemblies.
Request a quote or submit a pricing and availability inquiry to evaluate the F59D8G81KSA-45BIG2R for your next design.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
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