F59D8G81KSA-45TIAG2R
| Part Description |
SLC NAND Flash, 8Gbit, 1.8V, x8, 45ns, 48-pin TSOPI, Automotive |
|---|---|
| Quantity | 429 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | TSOPI-48 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 8 Gbit | Access Time | 20 ns | Grade | Automotive | ||
| Clock Frequency | N/A | Voltage | 1.7V ~ 1.95V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 105°C | Write Cycle Time Word Page | 200 µs | Packaging | 48-TSOPI | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 512M x 8 x 2 die | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | AEC-Q100 | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59D8G81KSA-45TIAG2R – SLC NAND Flash, 8Gbit, 1.8V, x8, 45ns, 48-pin TSOPI, Automotive
The F59D8G81KSA-45TIAG2R is an 8 Gbit single-level cell (SLC) NAND flash memory device provided in a 48-pin TSOPI surface-mount package. It is organized as two stacked 4Gbit dies (512M × 8 × 2) with a parallel x8 interface and a 1.8 V supply range (1.7 V–1.95 V).
Designed for high-reliability non-volatile storage, this AEC-Q100 qualified, automotive-grade device addresses applications requiring durable program/erase cycles, power-transition protection and a wide operating voltage range.
Key Features
- Memory Architecture — 8.59 Gbit total density implemented as two 4Gbit dies (512M × 8 × 2) with 4352-byte registers for data transfer and a page size of 4K + 256 bytes.
- SLC NAND Technology — Single-bit-per-cell NAND Flash offering industry-standard NAND commands, automatic program and erase operations and copy-back/cache operations for high-performance program and read sequences.
- Performance — Read cycle timing as low as 45 ns (datasheet ordering option 45 ns) with random read latency up to 25 µs (max) and documented page program and block erase timings (page program: typ. 400 µs, max. 700 µs; block erase: typ. 3.5 ms, max. 10 ms).
- Interface & Register — Command/Address/Data multiplexed DQ port (I/O0–I/O7) supporting standard NAND command sequences and hardware features such as cache program/read and EDO mode.
- Reliability & Endurance — Endurance rated to 60K program/erase cycles with uncycled data retention specified as 10 years at 55°C; ECC requirement indicated as 8-bit/512-byte.
- Power & Data Protection — Operates from 1.7 V to 1.95 V (nominal 1.8 V) and includes hardware data protection features such as program/erase lockout during power transitions and options for automatic page 0 read at power-up and automatic memory download.
- Package & Temperature — 48-pin TSOPI (TSOPI-48) surface-mount package with specified operating temperature range of −40 °C to 105 °C and RoHS-compliant construction.
- Automotive Qualification — AEC-Q100 qualification identifies this device as suitable for automotive-grade applications per the product data.
Typical Applications
- Automotive Embedded Storage — Non-volatile firmware, logging and media storage in in-vehicle systems where AEC-Q100 qualification and a wide operating temperature are required.
- Industrial Solid-State Storage — High-reliability data logging and file storage in industrial controllers and instrumentation that demand durable P/E cycles and long data retention.
- Consumer Imaging & Voice Recorders — Solid-state file storage for still cameras, voice recorders and similar devices that use large page sizes and cache program/read operations for efficient data transfer.
Unique Advantages
- SLC Endurance and Retention: 60K program/erase cycles and 10-year uncycled retention at 55 °C provide predictable longevity for long-life designs.
- Automotive-Grade Qualification: AEC-Q100 qualification supports integration into automotive designs that require disciplined component qualification.
- Power-Transition Protections: Built-in program/erase lockout and automatic memory-download/boot options reduce risk during supply events and simplify boot strategies.
- Flexible Performance Modes: Cache program/read, copy-back and EDO operation modes enable designers to optimize throughput and latency for specific use cases.
- Wide Supply Window: 1.7 V–1.95 V operation (nominal 1.8 V) supports designs with tight supply constraints and standard 1.8 V domains.
- Package and Integration: TSOPI-48 surface-mount package and x8 parallel interface ease board-level integration for high-density storage solutions.
Why Choose F59D8G81KSA-45TIAG2R?
The F59D8G81KSA-45TIAG2R targets designs that require robust, long-life non-volatile storage with the reliability characteristics of SLC NAND. With stacked dies, large page architecture and features such as hardware data protection, cache programming and AEC-Q100 qualification, it suits demanding automotive and industrial applications where endurance, retention and controlled behavior during power events are important.
Engineers specifying this device benefit from clear timing and endurance data, a standardized x8 parallel interface and a surface-mount TSOPI package for compact board layouts. The combination of SLC reliability, automotive qualification and power-transition safeguards delivers long-term stability for firmware, logging and media storage use cases.
Request a quote or submit an inquiry for F59D8G81KSA-45TIAG2R to receive pricing, lead-time and availability information for your design and production needs.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
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