F59D8G81KSA-45TIG2R

8Gb NAND Flash Ind.
Part Description

SLC NAND Flash, 8Gbit, x8, 1.8V, Industrial

Quantity 1,367 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusActive
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageTSOPI-48Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size8 GbitAccess Time20 nsGradeIndustrial
Clock FrequencyN/AVoltage1.7V ~ 1.95VMemory TypeNon-Volatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page200 µsPackaging48-TSOPI
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization512M x 8 x 2 die
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.71

Overview of F59D8G81KSA-45TIG2R – SLC NAND Flash, 8Gbit, x8, 1.8V, Industrial

The F59D8G81KSA-45TIG2R is an 8 Gbit SLC NAND Flash memory device implemented as two stacked 4 Gbit die (512M × 8 × 2). It provides parallel x8 I/O and a 1.8 V supply range (1.7 V–1.95 V) in a 48-pin TSOPI package targeted for industrial (-40 °C to 85 °C) environments.

Designed for high-density non-volatile storage, this device suits solid-state file storage, voice/data logging and image file memory applications where controlled endurance, retention and hardware protection features are required.

Key Features

  • Memory Architecture  8.59 Gbit SLC NAND implemented as two 4 Gbit die; organization: 512M × 8 × 2 with 4352-byte data/register increments.
  • Page & Block Organization  Page size (4K + 256) bytes; block = 64 pages = (256K + 16K) bytes; Number of blocks per die (LUN) = 2048.
  • Performance & Timing  Product data lists an AccessTime entry of 20 ns and an ordering speed identifier with a 45 ns read cycle; random page read timing and program/erase timings are available in the datasheet (random read 25 μs max; page program typ. 400 μs, max 700 μs; block erase typ. 3.5 ms, max 10 ms).
  • Endurance & Retention  SLC 1-bit/cell technology with endurance of 60K P/E cycles and uncycled data retention specified as 10 years at 55 °C (datasheet figures).
  • Power & Interface  Single 1.8 V supply range (1.7 V–1.95 V); parallel command/address/data multiplexed DQ port with x8 I/O.
  • System Reliability  Hardware data protection, program/erase lockout during power transitions, JESD47K compliance and ECC requirement of 8-bit per 512-byte to support robust data integrity.
  • Functional Capabilities  Automatic program and erase operations, cache program/read, copy-back, EDO mode, automatic memory download and optional automatic Page 0 read at power-up for boot support.
  • Package & Temperature  48-pin TSOPI (12 mm × 20 mm body, 0.5 mm pitch) surface-mount package qualified for industrial operation from -40 °C to 85 °C.
  • Compliance & Qualification  JEDEC qualification noted in product data and datasheet compliance statements.

Typical Applications

  • Solid-State File Storage  High-density SLC storage for embedded file systems and removable media where endurance and retention are required.
  • Voice/Data Recorders  Non-volatile storage for logging audio or telemetry with predictable program/erase behavior and hardware protection during power events.
  • Imaging Devices  Image file memory for still cameras and capture modules that need block/page organization and cache program/read support.
  • Industrial Embedded Systems  Reliable industrial-temperature non-volatile storage for controllers, instrumentation and human-machine interfaces.

Unique Advantages

  • Industrial Temperature Range: Rated for -40 °C to 85 °C to meet extended-environment requirements in industrial applications.
  • Low-Voltage Operation: Operates from 1.7 V to 1.95 V (nominal 1.8 V), enabling designs that target low-voltage system rails.
  • SLC Endurance and Retention: 60K P/E cycle endurance and 10-year uncycled retention at 55 °C support long-term data stability for lifecycle-critical designs.
  • Stacked Die Flexibility: The 512M × 8 × 2 die stacking provides high capacity in a compact TSOPI-48 footprint for space-constrained boards.
  • Integrated Data Protection: Hardware data protection and program/erase lockout during power transitions reduce risk of data corruption during unstable power events.
  • Boot & System Support: Optional automatic Page 0 read at power-up and boot-from-NAND support simplify system boot strategies for embedded platforms.

Why Choose F59D8G81KSA-45TIG2R?

The F59D8G81KSA-45TIG2R combines SLC endurance and data retention characteristics with a compact TSOPI-48 package and industrial temperature rating, making it well suited for embedded systems that require reliable, long-lived non-volatile storage. Its stacked die architecture and standard NAND command/data interface provide designers with high-density storage and familiar programming models.

This device is appropriate for customers designing industrial controllers, imaging and audio capture systems, or any application that requires predictable program/erase behavior, hardware-level protections and JEDEC-qualified silicon for production deployments.

Request a quote or submit an inquiry to receive pricing, lead-time and ordering information for the F59D8G81KSA-45TIG2R. Our team can provide part availability and support for integration into your design.

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