F59D8G81KSA-45TIG2R
| Part Description |
SLC NAND Flash, 8Gbit, x8, 1.8V, Industrial |
|---|---|
| Quantity | 1,367 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | TSOPI-48 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 8 Gbit | Access Time | 20 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 1.7V ~ 1.95V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 200 µs | Packaging | 48-TSOPI | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 512M x 8 x 2 die | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59D8G81KSA-45TIG2R – SLC NAND Flash, 8Gbit, x8, 1.8V, Industrial
The F59D8G81KSA-45TIG2R is an 8 Gbit SLC NAND Flash memory device implemented as two stacked 4 Gbit die (512M × 8 × 2). It provides parallel x8 I/O and a 1.8 V supply range (1.7 V–1.95 V) in a 48-pin TSOPI package targeted for industrial (-40 °C to 85 °C) environments.
Designed for high-density non-volatile storage, this device suits solid-state file storage, voice/data logging and image file memory applications where controlled endurance, retention and hardware protection features are required.
Key Features
- Memory Architecture 8.59 Gbit SLC NAND implemented as two 4 Gbit die; organization: 512M × 8 × 2 with 4352-byte data/register increments.
- Page & Block Organization Page size (4K + 256) bytes; block = 64 pages = (256K + 16K) bytes; Number of blocks per die (LUN) = 2048.
- Performance & Timing Product data lists an AccessTime entry of 20 ns and an ordering speed identifier with a 45 ns read cycle; random page read timing and program/erase timings are available in the datasheet (random read 25 μs max; page program typ. 400 μs, max 700 μs; block erase typ. 3.5 ms, max 10 ms).
- Endurance & Retention SLC 1-bit/cell technology with endurance of 60K P/E cycles and uncycled data retention specified as 10 years at 55 °C (datasheet figures).
- Power & Interface Single 1.8 V supply range (1.7 V–1.95 V); parallel command/address/data multiplexed DQ port with x8 I/O.
- System Reliability Hardware data protection, program/erase lockout during power transitions, JESD47K compliance and ECC requirement of 8-bit per 512-byte to support robust data integrity.
- Functional Capabilities Automatic program and erase operations, cache program/read, copy-back, EDO mode, automatic memory download and optional automatic Page 0 read at power-up for boot support.
- Package & Temperature 48-pin TSOPI (12 mm × 20 mm body, 0.5 mm pitch) surface-mount package qualified for industrial operation from -40 °C to 85 °C.
- Compliance & Qualification JEDEC qualification noted in product data and datasheet compliance statements.
Typical Applications
- Solid-State File Storage High-density SLC storage for embedded file systems and removable media where endurance and retention are required.
- Voice/Data Recorders Non-volatile storage for logging audio or telemetry with predictable program/erase behavior and hardware protection during power events.
- Imaging Devices Image file memory for still cameras and capture modules that need block/page organization and cache program/read support.
- Industrial Embedded Systems Reliable industrial-temperature non-volatile storage for controllers, instrumentation and human-machine interfaces.
Unique Advantages
- Industrial Temperature Range: Rated for -40 °C to 85 °C to meet extended-environment requirements in industrial applications.
- Low-Voltage Operation: Operates from 1.7 V to 1.95 V (nominal 1.8 V), enabling designs that target low-voltage system rails.
- SLC Endurance and Retention: 60K P/E cycle endurance and 10-year uncycled retention at 55 °C support long-term data stability for lifecycle-critical designs.
- Stacked Die Flexibility: The 512M × 8 × 2 die stacking provides high capacity in a compact TSOPI-48 footprint for space-constrained boards.
- Integrated Data Protection: Hardware data protection and program/erase lockout during power transitions reduce risk of data corruption during unstable power events.
- Boot & System Support: Optional automatic Page 0 read at power-up and boot-from-NAND support simplify system boot strategies for embedded platforms.
Why Choose F59D8G81KSA-45TIG2R?
The F59D8G81KSA-45TIG2R combines SLC endurance and data retention characteristics with a compact TSOPI-48 package and industrial temperature rating, making it well suited for embedded systems that require reliable, long-lived non-volatile storage. Its stacked die architecture and standard NAND command/data interface provide designers with high-density storage and familiar programming models.
This device is appropriate for customers designing industrial controllers, imaging and audio capture systems, or any application that requires predictable program/erase behavior, hardware-level protections and JEDEC-qualified silicon for production deployments.
Request a quote or submit an inquiry to receive pricing, lead-time and ordering information for the F59D8G81KSA-45TIG2R. Our team can provide part availability and support for integration into your design.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A