F59L1G81LB-25BCIAG2M

1Gb NAND Flash Auto.
Part Description

SLC NAND Flash, 1Gbit (128M × 8), 3.3V, x8, 25ns, 67-ball BGA, Automotive

Quantity 1,066 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageBGA-67Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size1 GbitAccess Time20 nsGradeAutomotive
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C – 105°CWrite Cycle Time Word Page350 µsPackaging67-BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization128M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationAEC-Q100ECCNEAR99HTS Code8542.32.00.71

Overview of F59L1G81LB-25BCIAG2M – SLC NAND Flash, 1Gbit (128M × 8), 3.3V, x8, 25ns, 67-ball BGA, Automotive

The F59L1G81LB-25BCIAG2M is a 1.074 Gbit single-level cell (SLC) NAND flash memory organized as 128M × 8 with an additional 4M × 8 spare area. Designed for parallel x8 interfacing, it operates from a 2.7 V to 3.6 V supply and is offered in a compact 67-ball BGA package.

Targeted at applications that require reliable non‑volatile mass storage and boot capability, this device combines automotive-grade qualification (AEC-Q100) with endurance, data retention, and features for high-throughput read/program operations.

Key Features

  • Memory Organization: 128M × 8 main array plus 4M × 8 spare area, providing a total 1.074 Gbit capacity and page/block structure suited for block-erasable storage.
  • Program and Erase Granularity: Page program size of (2K + 64) bytes and block erase size of (128K + 4K) bytes, with automatic program and erase operations.
  • Performance: Data read cycle time of 25 ns per byte in page mode (3.3 V); random read up to 25 µs (max). Typical program time ~400 µs and typical block erase time ~4 ms as shown in the datasheet.
  • Endurance and Retention: Endurance rated at 100K program/erase cycles and data retention specified at 10 years.
  • Reliability & Protection: Hardware data protection, program/erase lockout during power transitions, bad-block-protect and an ECC requirement of 1 bit/528 bytes to support data integrity.
  • Advanced Flash Features: Cache program and cache read operations, copy-back operation, automatic page 0 read at power-up, boot-from-NAND support and automatic memory download functionality for system boot and firmware update flows.
  • Power & Interface: Wide supply voltage range of 2.7 V to 3.6 V and a parallel multiplexed command/address/data I/O port for straightforward system integration.
  • Package & Temperature: Surface-mount 67-ball BGA (BGA-67) with operating temperature range of -40 °C to 105 °C and AEC-Q100 qualification for automotive applications.

Typical Applications

  • Automotive Systems: Automotive electronic control units and infotainment where AEC-Q100 qualification, extended temperature range and robust endurance are required for non-volatile storage and boot code.
  • Embedded Boot & Firmware Storage: Boot-from-NAND support and automatic page 0 read at power-up make this device suitable for system boot and firmware storage in embedded platforms.
  • Industrial Data Logging: High endurance and long data retention support reliable non-volatile storage for industrial logging and configuration data across temperature extremes.
  • Solid-State Mass Storage: Cost-effective SLC NAND architecture and block-erasable organization fit mass storage roles in devices that need durable, field‑replaceable flash.

Unique Advantages

  • Automotive-Qualified Reliability: AEC-Q100 qualification and operation from -40 °C to 105 °C allow deployment in automotive-grade environments.
  • High Endurance and Retention: 100K program/erase cycles and 10-year data retention give long-term storage durability for critical data and firmware.
  • Fast Read and Cache Operations: 25 ns page-mode read cycle and cache read/program features increase throughput for streamed reads and pipelined program operations.
  • Robust Data Protection: On-chip hardware protections, program/erase lockout during power transitions, bad-block protection and defined ECC requirements improve field reliability.
  • Flexible Power and Integration: 2.7 V–3.6 V supply range and parallel multiplexed I/O simplify integration across a variety of system power domains and controllers.
  • Compact BGA Footprint: 67-ball BGA package enables a small PCB footprint while providing the connectivity required for high-density embedded designs.

Why Choose F59L1G81LB-25BCIAG2M?

The F59L1G81LB-25BCIAG2M positions itself as a durable, automotive‑grade SLC NAND solution for designers who need reliable non-volatile storage with fast page read/program performance and long-term retention. Its combination of AEC-Q100 qualification, wide operating temperature range, high endurance and on-chip reliability features makes it well suited to automotive and demanding embedded applications.

Choose this device when your design requires block-based NAND storage for boot, firmware, or high-reliability data logging and when compact BGA packaging and a 2.7 V–3.6 V supply compatibility are important for board-level integration.

Request a quote or submit an inquiry to receive pricing, availability and support for integrating the F59L1G81LB-25BCIAG2M into your next design.

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