F59L1G81LB-25BIAG2M

1Gb NAND Flash Auto.
Part Description

SLC NAND Flash, 1Gbit, (128Mx8), 3.3V, x8, 25ns, 63-ball BGA, Automotive

Quantity 618 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageBGA-63Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size1 GbitAccess Time20 nsGradeAutomotive
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C – 105°CWrite Cycle Time Word Page350 µsPackaging63-BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization128M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationAEC-Q100ECCNEAR99HTS Code8542.32.00.71

Overview of F59L1G81LB-25BIAG2M – SLC NAND Flash, 1Gbit, (128Mx8), 3.3V, x8, 25ns, 63-ball BGA, Automotive

The F59L1G81LB-25BIAG2M is a 1.074 Gbit SLC NAND Flash memory device organized as 128M × 8 with spare area. Built on NAND flash architecture and designed for surface-mount assembly, the device supports parallel multiplexed command/address/data I/O and offers features targeted at robust embedded storage and boot applications.

With AEC-Q100 qualification and an operating range of -40 °C to 105 °C, this device addresses automotive and other harsh-environment applications that require durable non-volatile storage with hardware data protection and built-in ECC requirements.

Key Features

  • Memory Core 1.074 Gbit capacity organized as 128M × 8 with an additional 4M × 8 spare area; data register depth (2K + 64) × 8 bytes supports page-level operations.
  • Flash Technology SLC NAND Flash (1 bit per memory cell) offering erase/program cycle endurance of 100K program/erase cycles and 10 years data retention as specified.
  • Performance Product specification lists an access time of 20 ns. Datasheet details include page read and serial access timing (page-mode cycle as low as 25 ns per byte) and cache program/read and copy-back operations to improve throughput.
  • Program/Erase Characteristics Page program typical time ~400 µs (datasheet); block erase typical time ~3–4 ms (datasheet). Write-cycle timing field lists 350 µs for word/page program timing.
  • Interface and I/O Parallel multiplexed I/O port for command, address and data; cache program, cache read and EDO mode supported for efficient data transfer.
  • Power Single supply operation across 2.7 V to 3.6 V for 3.3 V systems, with program/erase lockout during power transitions and hardware data protection features.
  • Reliability and Management ECC requirement specified as 1 bit per 528 bytes, bad-block protection, automatic program/erase management and optional automatic page 0 read at power-up for boot support.
  • Package and Temperature Supplied in a 63-ball BGA (surface-mount) package with operating temperature range from -40 °C to 105 °C and AEC-Q100 qualification for automotive-grade deployments.

Typical Applications

  • Automotive Systems Non-volatile storage for infotainment, gateway, and control modules where AEC-Q100 qualification and extended temperature operation are required.
  • Embedded Boot Storage Boot-from-NAND support and automatic page 0 read at power-up make this device well suited for system boot and firmware storage in embedded controllers.
  • Industrial Data Logging High endurance and data retention characteristics support logging of operational data in industrial equipment across harsh environments.
  • Mass Storage in Embedded Devices Page-level cache program/read and copy-back features enable efficient streaming and block management for solid-state storage applications.

Unique Advantages

  • AEC-Q100 Qualified Automotive Grade: Explicit qualification for automotive use, combined with an extended -40 °C to 105 °C operating range, supports deployment in demanding environments.
  • SLC Endurance and Retention: 100K program/erase cycles and 10 years data retention provide long-term reliability for write-intensive applications.
  • Built-in ECC Guidance: ECC requirement of 1 bit/528 bytes helps integrators implement appropriate error correction to meet system reliability targets.
  • Boot and Startup Features: Optional automatic page 0 read at power-up and boot-from-NAND support simplify system initialization and firmware management.
  • Flexible Power Range: Operation from 2.7 V to 3.6 V makes the device compatible with standard 3.3 V system supplies while providing tolerance to supply variation.
  • System-Level Data Management: Cache program/read, copy-back, bad-block protection and program/erase lockout during power transitions reduce firmware complexity for robust storage handling.

Why Choose F59L1G81LB-25BIAG2M?

The F59L1G81LB-25BIAG2M balances endurance, robust data-management features and automotive-grade qualification in a 1Gbit SLC NAND offering. Its combination of specified program/erase characteristics, ECC guidance, and boot-friendly options make it suitable for embedded designs that require reliable, long-lived non-volatile storage under extended temperature and voltage conditions.

This part is a fit for engineers and procurement teams designing automotive and industrial systems where AEC-Q100 qualification, surface-mount BGA packaging, and explicit timing and endurance specifications are required to plan for system-level reliability and lifetime.

Request a quote or submit an inquiry to receive pricing, availability and lifecycle information for the F59L1G81LB-25BIAG2M and to discuss volume needs or delivery timelines.

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