F59L1G81LB-25BIAG2M
| Part Description |
SLC NAND Flash, 1Gbit, (128Mx8), 3.3V, x8, 25ns, 63-ball BGA, Automotive |
|---|---|
| Quantity | 618 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | BGA-63 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 1 Gbit | Access Time | 20 ns | Grade | Automotive | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 105°C | Write Cycle Time Word Page | 350 µs | Packaging | 63-BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 128M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | AEC-Q100 | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59L1G81LB-25BIAG2M – SLC NAND Flash, 1Gbit, (128Mx8), 3.3V, x8, 25ns, 63-ball BGA, Automotive
The F59L1G81LB-25BIAG2M is a 1.074 Gbit SLC NAND Flash memory device organized as 128M × 8 with spare area. Built on NAND flash architecture and designed for surface-mount assembly, the device supports parallel multiplexed command/address/data I/O and offers features targeted at robust embedded storage and boot applications.
With AEC-Q100 qualification and an operating range of -40 °C to 105 °C, this device addresses automotive and other harsh-environment applications that require durable non-volatile storage with hardware data protection and built-in ECC requirements.
Key Features
- Memory Core 1.074 Gbit capacity organized as 128M × 8 with an additional 4M × 8 spare area; data register depth (2K + 64) × 8 bytes supports page-level operations.
- Flash Technology SLC NAND Flash (1 bit per memory cell) offering erase/program cycle endurance of 100K program/erase cycles and 10 years data retention as specified.
- Performance Product specification lists an access time of 20 ns. Datasheet details include page read and serial access timing (page-mode cycle as low as 25 ns per byte) and cache program/read and copy-back operations to improve throughput.
- Program/Erase Characteristics Page program typical time ~400 µs (datasheet); block erase typical time ~3–4 ms (datasheet). Write-cycle timing field lists 350 µs for word/page program timing.
- Interface and I/O Parallel multiplexed I/O port for command, address and data; cache program, cache read and EDO mode supported for efficient data transfer.
- Power Single supply operation across 2.7 V to 3.6 V for 3.3 V systems, with program/erase lockout during power transitions and hardware data protection features.
- Reliability and Management ECC requirement specified as 1 bit per 528 bytes, bad-block protection, automatic program/erase management and optional automatic page 0 read at power-up for boot support.
- Package and Temperature Supplied in a 63-ball BGA (surface-mount) package with operating temperature range from -40 °C to 105 °C and AEC-Q100 qualification for automotive-grade deployments.
Typical Applications
- Automotive Systems Non-volatile storage for infotainment, gateway, and control modules where AEC-Q100 qualification and extended temperature operation are required.
- Embedded Boot Storage Boot-from-NAND support and automatic page 0 read at power-up make this device well suited for system boot and firmware storage in embedded controllers.
- Industrial Data Logging High endurance and data retention characteristics support logging of operational data in industrial equipment across harsh environments.
- Mass Storage in Embedded Devices Page-level cache program/read and copy-back features enable efficient streaming and block management for solid-state storage applications.
Unique Advantages
- AEC-Q100 Qualified Automotive Grade: Explicit qualification for automotive use, combined with an extended -40 °C to 105 °C operating range, supports deployment in demanding environments.
- SLC Endurance and Retention: 100K program/erase cycles and 10 years data retention provide long-term reliability for write-intensive applications.
- Built-in ECC Guidance: ECC requirement of 1 bit/528 bytes helps integrators implement appropriate error correction to meet system reliability targets.
- Boot and Startup Features: Optional automatic page 0 read at power-up and boot-from-NAND support simplify system initialization and firmware management.
- Flexible Power Range: Operation from 2.7 V to 3.6 V makes the device compatible with standard 3.3 V system supplies while providing tolerance to supply variation.
- System-Level Data Management: Cache program/read, copy-back, bad-block protection and program/erase lockout during power transitions reduce firmware complexity for robust storage handling.
Why Choose F59L1G81LB-25BIAG2M?
The F59L1G81LB-25BIAG2M balances endurance, robust data-management features and automotive-grade qualification in a 1Gbit SLC NAND offering. Its combination of specified program/erase characteristics, ECC guidance, and boot-friendly options make it suitable for embedded designs that require reliable, long-lived non-volatile storage under extended temperature and voltage conditions.
This part is a fit for engineers and procurement teams designing automotive and industrial systems where AEC-Q100 qualification, surface-mount BGA packaging, and explicit timing and endurance specifications are required to plan for system-level reliability and lifetime.
Request a quote or submit an inquiry to receive pricing, availability and lifecycle information for the F59L1G81LB-25BIAG2M and to discuss volume needs or delivery timelines.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
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