F59L1G81LB-25TIG2M
| Part Description |
SLC NAND Flash, 1Gbit (128M x 8), 3.3V, x8, 25ns, Industrial |
|---|---|
| Quantity | 1,074 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | TSOPI-48 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 1 Gbit | Access Time | 20 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 350 µs | Packaging | 48-TSOPI | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 128M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59L1G81LB-25TIG2M – SLC NAND Flash, 1Gbit (128M x 8), 3.3V, x8, 25ns, Industrial
The F59L1G81LB-25TIG2M is a 1 Gbit Single-Level Cell (SLC) NAND Flash memory organized as 128M x 8 with spare capacity, designed for industrial embedded storage applications. It implements SLC floating-gate cells (1 bit per cell) in a parallel NAND architecture and operates from a 3.3V supply (2.7V–3.6V).
Targeted at solid-state mass storage and embedded code/boot applications, this JEDEC-qualified device offers industrial operating temperature and a TSOPI-48 surface-mount package for integration into constrained board designs requiring durable non-volatile storage.
Key Features
- Memory Organization 1.074 Gbit total capacity presented as 128M x 8 with additional spare area ((128M + 4M) × 8bit) for block management and bad-block handling.
- SLC NAND Technology & Reliability 1 bit per memory cell SLC architecture with endurance rated at 100K program/erase cycles and data retention specified for 10 years.
- Page & Block Structure Page size (2K + 64) bytes and block size (128K + 4K) bytes; page program and block erase are supported with typical program time ~400 µs and typical block erase time ~3–4 ms (datasheet typical values).
- Performance Parallel read/write operation with an access time listed as 20 ns and serial access/read cycle timing noted at 25 ns (3.3V); random read up to 25 µs (max) per datasheet specifications.
- Interface & Operation Modes Parallel command/address/data multiplexed I/O, cache program and cache read operations, copy-back, EDO mode, OTP operation, and automatic page 0 read at power-up.
- Power & Protection 3.3V VCC operation with allowable range 2.7V–3.6V; includes hardware data protection and program/erase lockout during power transitions.
- Package & Temperature Surface-mount TSOPI-48 package (48-pin) with industrial operating temperature range of −40 °C to 85 °C and JEDEC qualification.
- Data Integrity ECC requirement specified at 1 bit per 528 bytes and built-in bad-block protection for robust stored-data management.
Typical Applications
- Solid-state mass storage — Cost-effective NAND storage for embedded devices and storage appliances requiring block-erasable non-volatile memory.
- Industrial embedded systems — Firmware and data storage in equipment operating across −40 °C to 85 °C where JEDEC-qualified SLC endurance is required.
- Boot and code storage — Supports boot-from-NAND and automatic page read at power-up for embedded system boot code and system initialization.
- Firmware image and update storage — Cache program, cache read and copy-back operations streamline programming and in-field firmware management.
Unique Advantages
- Industrial temperature rating: Operates from −40 °C to 85 °C for reliable performance in harsh environments.
- SLC endurance and long retention: 100K program/erase cycles and 10-year data retention support long-term, write-intensive applications.
- JEDEC-qualified device: Standardized qualification simplifies design validation and supply-chain selection.
- Flexible parallel interface in compact package: x8 parallel I/O in a 48-pin TSOPI surface-mount package for straightforward board-level integration.
- Fast page/block operations with cache support: Cache program/read and copy-back features improve throughput for large sequential writes and block management.
- Built-in data protection: Hardware protection features plus ECC requirement (1 bit/528 bytes) and bad-block protection enhance stored-data integrity.
Why Choose F59L1G81LB-25TIG2M?
The F59L1G81LB-25TIG2M delivers a durable, JEDEC-qualified SLC NAND Flash solution combining industrial temperature operation, proven SLC endurance, and practical interface options in a compact TSOPI-48 package. Its page/block organization, cache and copy-back features, and program/erase protections make it well-suited for embedded storage, boot code, and firmware retention in industrial systems.
This device is appropriate for designers seeking long-term retention and write endurance in non-volatile memory, with datasheet-documented timings, voltages, and reliability characteristics applicable to embedded and industrial product lines.
Request a quote or submit an inquiry to receive pricing, lead-time and availability information for the F59L1G81LB-25TIG2M.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
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Revenue: $377.8 Million
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