F59L1G81MB-25BCG2M
| Part Description |
SLC NAND Flash, 1Gbit, 3.3V, 25ns, 67‑ball BGA |
|---|---|
| Quantity | 939 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | BGA-67 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 1 Gbit | Access Time | 20 ns | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C – 70°C | Write Cycle Time Word Page | 350 µs | Packaging | 67-BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 128M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59L1G81MB-25BCG2M – SLC NAND Flash, 1Gbit, 3.3V, 25ns, 67‑ball BGA
The F59L1G81MB-25BCG2M is a single-level cell (SLC) NAND flash memory device organized as 128M × 8 with additional spare capacity, delivering a total memory size of 1.074 Gbit. It implements a parallel x8 NAND interface optimized for 3.3V systems (operating range 2.7V–3.6V) and is offered in a 67‑ball BGA surface‑mount package for compact board designs.
Designed for solid‑state mass storage and embedded boot/firmware applications, the device provides page‑based operations, hardware data protection and features that support efficient program/erase throughput and in‑system boot scenarios within a commercial operating temperature range (0 °C to 70 °C).
Key Features
- Memory Architecture: 128M × 8 organization with an additional spare area ((128M + 4M) × 8bit) for block management and redundancy; total memory size 1.074 Gbit.
- Storage and Page Structure: Page program and read based on (2K + 64)‑byte pages (2,112 bytes) and block erase size of (128K + 4K) bytes.
- NAND SLC Technology: 1‑bit per memory cell non‑volatile NAND flash (SLC) providing endurance and retention characteristics suitable for firmware and storage duties.
- Performance: 25 ns cycle time speed grade with parallel x8 interface; random read and serial access modes supported for flexible throughput (random read and serial access timings specified in the datasheet).
- Program/Erase Metrics: Typical program time and block erase times specified in the datasheet (program time and block erase typical values available for planning write/erase cycles).
- Reliability & Data Integrity: ECC requirement of 4‑bit per 528 bytes, hardware data protection, bad‑block protection and program/erase lockout during power transitions.
- System Features: Cache program/read and copy‑back operations for improved write/read throughput; automatic page 0 read at power‑up, Boot from NAND support and automatic memory download options.
- Package & Mounting: 67‑ball BGA (BGA‑67) surface‑mount package suitable for space‑constrained board layouts; commercial grade (0 °C to +70 °C).
- Power: 3.3V nominal operation with a supply voltage range of 2.7V to 3.6V.
- Standards & Compliance: RoHS compliant.
Typical Applications
- Solid‑State Mass Storage: Use as cost‑effective embedded NAND storage for devices that require block‑erasable flash and page‑oriented program/read operations.
- Embedded Boot & Firmware Storage: Supports boot from NAND and automatic page 0 read at power‑up for systems that require on‑board boot media and firmware download capabilities.
- Consumer and Commercial Electronics: Compact 67‑ball BGA package and parallel interface fit compact designs needing non‑volatile storage within a 0 °C to 70 °C commercial range.
- Data Streaming & Media Storage: Cache read and cache program operations enable efficient sequential page read/write for streaming data scenarios.
Unique Advantages
- Proven SLC NAND Cell Technology: Single‑level cell architecture provides defined endurance and retention characteristics suitable for firmware and storage applications.
- Built‑in Data Protection: Hardware data protection, bad‑block protection and program/erase lockout during power transitions help safeguard stored data during critical operations.
- Boot and Download Support: Automatic page 0 read at power‑up, boot from NAND and automatic memory download features simplify system boot and field update flows.
- Throughput Enhancements: Cache program/read and copy‑back features minimize data transfer overhead and improve effective program/read throughput for consecutive page operations.
- Design Flexibility: Parallel x8 interface and 2.7V–3.6V supply range allow integration into a wide range of 3.3V system designs.
- Commercial Temperature & RoHS Compliance: Commercial operating range (0 °C to +70 °C) and RoHS compliance meet common environmental and regulatory requirements for consumer and commercial products.
Why Choose F59L1G81MB-25BCG2M?
The F59L1G81MB-25BCG2M combines SLC NAND reliability with features oriented to embedded storage and boot applications: page‑based program/read, cache and copy‑back operations, hardware protection mechanisms and boot support are all designed to simplify firmware management and data integrity in compact board designs. Its parallel x8 interface, 67‑ball BGA package and 2.7V–3.6V supply range make it suitable for a broad range of 3.3V commercial systems.
This device is well suited for engineers and procurement teams developing solid‑state storage, boot/media storage and embedded firmware platforms that require documented endurance and retention characteristics, integrated protection features and a compact surface‑mount package.
Request a quote or submit an inquiry to get pricing and availability for the F59L1G81MB-25BCG2M for your next design.
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