F59L1G81MB-25BG2M

1Gb NAND Flash
Part Description

SLC NAND Flash, 1Gbit (128M × 8), 3.3V, 25ns, 63-ball BGA

Quantity 741 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageBGA-63Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size1 GbitAccess Time20 nsGradeCommercial
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature0°C – 70°CWrite Cycle Time Word Page350 µsPackaging63-BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization128M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.00.71

Overview of F59L1G81MB-25BG2M – SLC NAND Flash, 1Gbit (128M × 8), 3.3V, 25ns, 63-ball BGA

The F59L1G81MB-25BG2M is a single-level cell (SLC) NAND Flash memory device providing 1.074 Gbit organized as 128M × 8 with an additional spare area. Designed for 3.3V systems (operating 2.7V–3.6V), this parallel-interface Flash delivers non-volatile storage with features aimed at solid-state mass storage, boot/firmware storage, and embedded system applications.

Built with CMOS floating-gate technology and SLC memory cells, the device combines endurance and data-retention characteristics with system-oriented features such as cache/copy-back operations, hardware data protection and automatic read-at-power-up to streamline integration into storage and embedded designs.

Key Features

  • Core / Memory Organization 1.074 Gbit total capacity organized as 128M × 8 with an additional 4M × 8 spare area; page size (2K + 64) bytes and block erase size (128K + 4K) bytes.
  • SLC Technology & Endurance Single-bit-per-cell (SLC) NAND Flash with endurance specified at 100K program/erase cycles and data retention of 10 years.
  • Performance Access time listed at 20 ns and page-mode read cycle capability of 25 ns per byte; program and erase times support fast write cycles (typical program time noted in datasheet and page program operation documented).
  • Program / Erase & Cache Operations Automatic program and erase, cache program and cache read features, copy-back operation and automatic page 0 read at power-up to improve throughput and simplify boot scenarios.
  • Interface & I/O Parallel command/address/data multiplexed I/O port for direct interface to parallel memory controllers and host systems; supports EDO mode and hardware data protection features.
  • System Reliability ECC requirement specified as 4-bit per 528-byte, bad-block protect, program/erase lockout during power transitions, OTP operation and automatic memory download support.
  • Power & Environmental Voltage supply 2.7 V to 3.6 V (nominal 3.3 V) and commercial operating temperature range 0 °C to +70 °C.
  • Package & Mounting Surface-mount 63-ball BGA (BGA-63) package optimized for compact board-level integration; RoHS compliant.

Typical Applications

  • Solid-state mass storage Suited for systems requiring non-volatile mass storage where SLC endurance and data retention are important.
  • Boot and firmware storage Features such as automatic page 0 read at power-up and automatic memory download support reliable system boot and firmware management.
  • Embedded systems Parallel interface and cache/copy-back operations make it appropriate for embedded designs that stream or update data efficiently.
  • Consumer and industrial electronics Commercial-grade operating range and compact BGA packaging enable integration in space-constrained devices operating within 0 °C to +70 °C.

Unique Advantages

  • SLC reliability One bit per memory cell and 100K program/erase cycles deliver endurance suitable for demanding write-intensive applications.
  • Designed for robust data retention Specified 10-year retention and an ECC requirement of 4-bit/528-byte support long-term data integrity strategies.
  • Throughput-enhancing features Cache program, cache read and copy-back operations reduce program/read latency and improve effective throughput for sequential and large-file operations.
  • System-level protections Hardware data protection, bad-block management and program/erase lockout during power transitions minimize data corruption risks during critical events.
  • Flexible power window 2.7 V–3.6 V supply range supports a broad set of 3.3 V system designs without additional voltage translation.
  • Compact, production-ready package 63-ball BGA surface-mount package enables dense PCB layouts and automated assembly workflows.

Why Choose F59L1G81MB-25BG2M?

The F59L1G81MB-25BG2M positions itself as a practical SLC NAND Flash solution where endurance, data retention and reliable boot/storage behavior are required. Its organization, integrated cache and copy-back functions, and system-protection features make it well suited for designers targeting solid-state mass storage and embedded boot/firmware applications in commercial-temperature environments.

With a wide supply voltage window, compact BGA packaging, and explicit ECC and endurance specifications, this device supports designs that need predictable lifecycle behavior, robust data protection, and efficient on-board storage management backed by documented NAND Flash features.

Request a quote or submit an inquiry to obtain pricing, lead-time information and to start evaluating the F59L1G81MB-25BG2M for your design or procurement requirements.

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