F59L1G81MB-25BG2M
| Part Description |
SLC NAND Flash, 1Gbit (128M × 8), 3.3V, 25ns, 63-ball BGA |
|---|---|
| Quantity | 741 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | BGA-63 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 1 Gbit | Access Time | 20 ns | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C – 70°C | Write Cycle Time Word Page | 350 µs | Packaging | 63-BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 128M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59L1G81MB-25BG2M – SLC NAND Flash, 1Gbit (128M × 8), 3.3V, 25ns, 63-ball BGA
The F59L1G81MB-25BG2M is a single-level cell (SLC) NAND Flash memory device providing 1.074 Gbit organized as 128M × 8 with an additional spare area. Designed for 3.3V systems (operating 2.7V–3.6V), this parallel-interface Flash delivers non-volatile storage with features aimed at solid-state mass storage, boot/firmware storage, and embedded system applications.
Built with CMOS floating-gate technology and SLC memory cells, the device combines endurance and data-retention characteristics with system-oriented features such as cache/copy-back operations, hardware data protection and automatic read-at-power-up to streamline integration into storage and embedded designs.
Key Features
- Core / Memory Organization 1.074 Gbit total capacity organized as 128M × 8 with an additional 4M × 8 spare area; page size (2K + 64) bytes and block erase size (128K + 4K) bytes.
- SLC Technology & Endurance Single-bit-per-cell (SLC) NAND Flash with endurance specified at 100K program/erase cycles and data retention of 10 years.
- Performance Access time listed at 20 ns and page-mode read cycle capability of 25 ns per byte; program and erase times support fast write cycles (typical program time noted in datasheet and page program operation documented).
- Program / Erase & Cache Operations Automatic program and erase, cache program and cache read features, copy-back operation and automatic page 0 read at power-up to improve throughput and simplify boot scenarios.
- Interface & I/O Parallel command/address/data multiplexed I/O port for direct interface to parallel memory controllers and host systems; supports EDO mode and hardware data protection features.
- System Reliability ECC requirement specified as 4-bit per 528-byte, bad-block protect, program/erase lockout during power transitions, OTP operation and automatic memory download support.
- Power & Environmental Voltage supply 2.7 V to 3.6 V (nominal 3.3 V) and commercial operating temperature range 0 °C to +70 °C.
- Package & Mounting Surface-mount 63-ball BGA (BGA-63) package optimized for compact board-level integration; RoHS compliant.
Typical Applications
- Solid-state mass storage Suited for systems requiring non-volatile mass storage where SLC endurance and data retention are important.
- Boot and firmware storage Features such as automatic page 0 read at power-up and automatic memory download support reliable system boot and firmware management.
- Embedded systems Parallel interface and cache/copy-back operations make it appropriate for embedded designs that stream or update data efficiently.
- Consumer and industrial electronics Commercial-grade operating range and compact BGA packaging enable integration in space-constrained devices operating within 0 °C to +70 °C.
Unique Advantages
- SLC reliability One bit per memory cell and 100K program/erase cycles deliver endurance suitable for demanding write-intensive applications.
- Designed for robust data retention Specified 10-year retention and an ECC requirement of 4-bit/528-byte support long-term data integrity strategies.
- Throughput-enhancing features Cache program, cache read and copy-back operations reduce program/read latency and improve effective throughput for sequential and large-file operations.
- System-level protections Hardware data protection, bad-block management and program/erase lockout during power transitions minimize data corruption risks during critical events.
- Flexible power window 2.7 V–3.6 V supply range supports a broad set of 3.3 V system designs without additional voltage translation.
- Compact, production-ready package 63-ball BGA surface-mount package enables dense PCB layouts and automated assembly workflows.
Why Choose F59L1G81MB-25BG2M?
The F59L1G81MB-25BG2M positions itself as a practical SLC NAND Flash solution where endurance, data retention and reliable boot/storage behavior are required. Its organization, integrated cache and copy-back functions, and system-protection features make it well suited for designers targeting solid-state mass storage and embedded boot/firmware applications in commercial-temperature environments.
With a wide supply voltage window, compact BGA packaging, and explicit ECC and endurance specifications, this device supports designs that need predictable lifecycle behavior, robust data protection, and efficient on-board storage management backed by documented NAND Flash features.
Request a quote or submit an inquiry to obtain pricing, lead-time information and to start evaluating the F59L1G81MB-25BG2M for your design or procurement requirements.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A