F59L1G81MB-25TG2M

The F59L1G81MB-25TG2M is a 1.074 Gbit single-level cell (SLC) NAND flash memory organized as 128M × 8. Built for non-volatile, parallel-interface storage, the device targets solid-state mass storage and embedded code/boot applications that require robust program/erase endurance and data retention.

Featuring a 3.3V nominal supply (operating 2.7V–3.6V), fast page/read and cache operations, and an industry-standard 48-pin TSOPI package, this device delivers a balance of performance, reliability and straightforward board-level integration for commercial-temperature designs.

Key Features

• Memory Core & Organization 1.074 Gbit SLC NAND arranged as 128M × 8 with spare area (4M × 8) and a data register of (2K + 64) × 8 bytes supporting page-based program and read operations.
• Page & Block Architecture Page program size and read page size of (2K + 64) bytes; block erase granularity is (128K + 4K) bytes, enabling efficient large-block erase and page-level updates.
• Performance Access time listed at 20 ns and page-mode data cycle time of 25 ns per byte (3.3V). Cache program and cache read features improve sustained throughput for multi-page operations.
• Program / Erase Timing Typical program time around 300–400 µs for a full page and typical block erase time around 3–4 ms, supporting fast write/garbage-collection flows in storage systems.
• Interface Parallel, multiplexed command/address/data I/O ports (x8 I/O) for straightforward interface to common NAND controllers and MCU/FPGA hosts.
• Power Nominal 3.3V operation with a wide supply range of 2.7V–3.6V for compatibility with common system rails.
• Reliability Endurance rated to 100K program/erase cycles with 10-year data retention and ECC requirement of 4-bit per 528 bytes to support data integrity in commercial applications.
• System Features Supports automatic program/erase operations, copy-back, automatic page 0 read at power-up, boot-from-NAND support, and bad-block protection to simplify boot and field-update flows.
• Package & Temperature Surface-mount TSOPI-48 package (12 mm × 20 mm body, 0.5 mm pitch) with a commercial operating range of 0 °C to +70 °C.
• Compliance RoHS compliant (Pb-free) device options and multiple package configurations are available within the F59L1G81MB series.

Typical Applications

• Embedded Storage Ideal for solid-state mass storage in embedded systems where SLC endurance and page/block operations are required for reliable data handling.
• Boot / Firmware Storage Boot-from-NAND and automatic page 0 read at power-up simplify storing bootloaders and firmware images for embedded controllers and appliances.
• Industrial & Commercial Devices Suitable for commercial-temperature electronics that require non-volatile code or user data storage with long retention and high program/erase endurance.
• In-field Update Systems Cache program, cache read and copy-back operations enable efficient firmware download and block management during remote updates.

Unique Advantages

• High Endurance SLC Technology: 100K program/erase cycles provides extended lifecycle for write-intensive embedded storage and firmware update use cases.
• Page-Optimized Throughput: Large (2K + 64) byte pages with cache program/read and 25 ns cycle support enable efficient streaming and reduced program latency across multi-page writes.
• Built-in Boot Support: Automatic page 0 read at power-up and boot-from-NAND capability reduce system initialization complexity for devices requiring on-board boot code.
• Design-Friendly Interface: Standard parallel, multiplexed command/address/data I/O in an industry TSOPI-48 package simplifies board-level integration with common controllers.
• Data Integrity Features: ECC requirement and bad-block protection help maintain data reliability over the product lifetime and during program/erase cycles.
• Wide Supply Tolerance: Operation across 2.7V–3.6V supports compatibility with a range of system power rails and designs.

Why Choose F59L1G81MB-25TG2M?

The F59L1G81MB-25TG2M positions itself as a durable, high-endurance SLC NAND solution for commercial embedded storage and firmware/boot applications. With page-optimized architecture, cache operations and robust program/erase endurance, it is suited to designs that need reliable non-volatile storage, predictable program/erase timing and long-term data retention.

Engineers specifying this part will benefit from a proven NAND feature set—automatic power-up behavior, copy-back, cache and bad-block management—alongside a standard TSOPI form factor for efficient PCB layout and assembly in commercial-temperature designs.

Request a quote or submit an RFQ to initiate procurement and get pricing and availability for the F59L1G81MB-25TG2M.