F59L2G81KA-25BCG2N
| Part Description |
SLC NAND Flash, 2Gbit, 3.3V, x8, 25ns, 67-ball BGA |
|---|---|
| Quantity | 1,314 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | BGA-67 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 2 Gbit | Access Time | 20 ns | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C – 70°C | Write Cycle Time Word Page | 400 µs | Packaging | 67-BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 256M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59L2G81KA-25BCG2N – SLC NAND Flash, 2Gbit, 3.3V, x8, 25ns, 67-ball BGA
The F59L2G81KA-25BCG2N is a 2 Gbit (256M × 8) single-level cell (SLC) NAND flash memory device optimized for high-density non-volatile storage. It operates from a 3.3V supply (2.7V–3.6V) and provides parallel x8 data I/O in a compact 67-ball BGA surface-mount package.
Designed for embedded storage applications, the device supports automatic program and erase operations, cache read/program, two-plane and copy-back operations, and hardware data protection to simplify system integration while delivering robust retention and endurance characteristics.
Key Features
- Memory Organization — 2.147 Gbit capacity organized as 256M × 8 with page size of (2K + 128) bytes and block size of 64 pages ((128K + 8K) bytes).
- SLC NAND Technology — Single-level cell architecture with 1 bit per cell, supporting 50K program/erase cycles and 10-year uncycled data retention at 55°C.
- Performance — 25 ns read cycle speed (ordering speed grade) with typical page program time of 400 µs (max 700 µs) and typical block erase time of 3 ms (max 10 ms).
- Interface & Operations — Parallel x8 interface with command/address/data multiplexed on DQ ports, automatic program/erase, cache program/read, copy-back, two-plane and EDO modes.
- Data Integrity — ECC requirement specified as 8-bit per 512-byte to support reliable data correction for system-level error management.
- Power — VCC = 3.3V nominal with an operating range of 2.7V to 3.6V suitable for standard 3.3V embedded systems.
- Package & Mounting — 67-ball BGA (surface-mount) package for space-efficient, board-level integration; commercial operating temperature 0°C to 70°C.
Typical Applications
- Solid State File Storage — High-density non-volatile storage for embedded file systems requiring reliable program/erase cycles and long data retention.
- Consumer Imaging Devices — Image file memory for still cameras and similar devices where block/ page operations and cache/program features accelerate data throughput.
- Voice/Audio Recording — Non-volatile storage for voice and audio recorders benefiting from automatic program/erase and cache read/program operations.
- Embedded Data Logging — Reliable storage for logging applications that require endurance (50K P/E cycles) and defined retention characteristics.
Unique Advantages
- SLC Endurance and Retention — 50K program/erase cycles and 10-year retention at 55°C provide predictable longevity for long-life storage applications.
- System-Level Reliability — Specified ECC requirement (8-bit/512-byte) and hardware data protection features reduce risk of data corruption in deployed systems.
- Performance Versatility — 25 ns read cycle speed and cache program/read operations enable responsive read/write behavior for embedded storage tasks.
- Design-friendly Voltage Range — 2.7V–3.6V supply range simplifies integration into standard 3.3V designs and tolerate supply variation.
- Compact, Surface-Mount Package — 67-ball BGA allows high-density PCB layouts while maintaining a parallel x8 interface for straightforward board routing.
- Automatic Program/Erase and Utilities — Built-in automatic program/erase, automatic page 0 read at power-up option, and boot-from-NAND support simplify firmware and bootloader designs.
Why Choose F59L2G81KA-25BCG2N?
The F59L2G81KA-25BCG2N combines SLC NAND reliability with practical performance and system-level features that ease integration into embedded storage designs. With defined program and erase timings, ECC guidance, and robust endurance and retention metrics, it is suited to designs that require predictable long-term non-volatile storage.
This device is ideal for engineers and procurement teams implementing solid-state file storage, imaging, audio recording, and embedded logging solutions where capacity, endurance, and a compact BGA footprint are primary considerations. The device’s automatic management features and standard 3.3V supply range help reduce firmware complexity and BOM impact.
Request a quote or submit a product inquiry to evaluate the F59L2G81KA-25BCG2N for your next storage design and to obtain pricing and availability information.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A