F59L2G81KA-25BCIAG2N

The F59L2G81KA-25BCIAG2N is a 2.147 Gbit single-level cell (SLC) NAND flash device organized as 256M × 8. Designed for embedded non-volatile storage, it provides parallel NAND interface operation and a compact 67-ball BGA package for surface-mount assembly. With AEC-Q100 qualification and an extended operating temperature range, this device targets automotive and other demanding applications that require reliable, high-density flash storage.

Key Features

• Memory Architecture 2.147 Gbit SLC NAND organized as 256M × 8 with a page size of (2K + 128) bytes and block size of 64 pages (128K + 8K bytes).
• Performance Access time specified at 20 ns; datasheet timing includes a 25 ns read cycle and random page read up to 25 µs (max).
• Program & Erase Page program time typical 400 µs (700 µs max) and block erase typical 3 ms (10 ms max); automatic program and erase operations with cache program support and copy-back operation.
• Endurance & Retention Endurance rated to 50K program/erase cycles with uncycled data retention of 10 years at 55°C; ECC requirement specified as 8-bit per 512-byte.
• Interface & System Features Command/address/data multiplexed DQ port (parallel interface), support for two-plane operation, EDO mode, automatic page 0 read at power-up option, boot-from-NAND and automatic memory download features.
• Power Single-supply operation across 2.7 V to 3.6 V.
• Package & Mounting 67-ball BGA (BGA-67) surface-mount package suitable for high-density board designs.
• Automotive Qualification & Temperature Range AEC-Q100 qualified and specified for operation from −40 °C to 105 °C.
• Compliance RoHS-compliant.

Typical Applications

• Solid-state file storage — High-density non-volatile storage for embedded file systems and data logging.
• Imaging devices — Storage for still-camera image files and other imaging subsystems requiring large page/block architecture.
• Voice and audio recorders — Reliable program/erase cycles and data retention for voice recording and playback storage.
• Embedded system boot and storage — Boot-from-NAND support and automatic memory download for system initialization and firmware storage.

Unique Advantages

• Automotive-grade reliability: AEC-Q100 qualification combined with −40 °C to 105 °C operation addresses demanding environmental requirements.
• SLC endurance and retention: 50K program/erase cycles and 10-year uncycled data retention at 55 °C support long-life deployments.
• Large page/block architecture: 2176-byte registers and 64-page blocks enable efficient large-file program/read workflows and block-level erase management.
• Flexible power window: 2.7 V to 3.6 V supply range simplifies integration with common 3.3 V systems.
• Compact, production-ready package: BGA-67 surface-mount package enables space-efficient board designs and automated assembly.
• System-level features: Built-in cache program/read, two-plane and copy-back operations, and boot-from-NAND support streamline firmware management and performance tuning.

Why Choose F59L2G81KA-25BCIAG2N?

The F59L2G81KA-25BCIAG2N combines SLC NAND reliability with automotive-grade qualification and a compact BGA footprint, making it well suited for embedded designs that demand durability, long-term data retention, and thermal robustness. Its page/block architecture, ECC guidance, and system features (boot support, cache operations, two-plane mode) provide engineers with the control needed for efficient storage management and firmware workflows.

Backed by ESMT’s NAND product family, this part is targeted at designers of automotive electronics, industrial systems, imaging devices, and other applications that require high-density, dependable non-volatile storage with established program/erase endurance and temperature performance.

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