F59L2G81KA-25BCIG2N
| Part Description |
SLC NAND Flash, 2 Gbit, 3.3V, x8, 25 ns, 67-ball BGA |
|---|---|
| Quantity | 1,022 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | BGA-67 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 2 Gbit | Access Time | 20 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 400 µs | Packaging | 67-BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 256M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59L2G81KA-25BCIG2N – SLC NAND Flash, 2 Gbit, 3.3V, x8, 25 ns, 67-ball BGA
The F59L2G81KA-25BCIG2N is a 2 Gbit single-level-cell (SLC) NAND flash memory organized as 256M × 8. Built on NAND Flash SLC technology, the device provides block- and page-based non-volatile storage with a parallel DQ interface and command/address/data multiplexing for compact system integration.
Targeted at industrial applications, the device combines a 2.7 V–3.6 V supply range, JEDEC qualification, and an industrial operating temperature range of −40 °C to 85 °C to support reliable data storage in embedded and storage-oriented designs.
Key Features
- Memory Architecture — 2.147 Gbit capacity organized as 256M × 8 with a page size of (2K + 128) bytes and a block size of 64 pages ((128K + 8K) bytes), enabling page- and block-level operations.
- SLC NAND Technology — Single-bit-per-cell (SLC) design with automatic program and erase operations for predictable program/erase behavior and endurance characteristics.
- Performance (25 ns speed grade) — Offered in a 25 ns ordering speed grade for read-cycle timing; supports cache program and cache read operations plus EDO mode and copy-back operations to improve data transfer efficiency.
- Program and Erase Timing — Typical page program time 400 µs (700 µs max) and typical block erase time 3 ms (10 ms max), with automatic program/erase control in the device.
- Endurance and Retention — Endurance rated to 50K program/erase cycles and uncycled data retention specified as 10 years at 55 °C.
- Interface and System Support — Parallel command/address/data multiplexed DQ port with features such as two-plane operation, page copy, automatic Page 0 read at power-up option, and boot-from-NAND support.
- Reliability Features — Hardware data protection, program/erase lockout during power transitions, and an ECC requirement of 8-bit per 512 bytes to support system-level error correction strategies.
- Power and Temperature — Nominal VCC 3.3 V with an operating range of 2.7 V to 3.6 V, and industrial-grade operation from −40 °C to 85 °C.
- Package — Surface-mount 67-ball BGA (BGA-67) package tailored for space-conscious board designs and reliable solder attachment.
- Standards — JEDEC qualification and designed by Elite Semiconductor Microelectronics Technology Inc. (ESMT).
Typical Applications
- Solid-state file storage — High-density non-volatile storage for embedded file systems and removable media where robust block/ page management is required.
- Image and multimedia storage — Storage for still cameras and voice-recording devices that require page-oriented program and read operations.
- Industrial embedded systems — Onboard code and data storage for industrial controllers and instrumentation operating across −40 °C to 85 °C.
Unique Advantages
- Long data retention — Specified 10 years of uncycled data retention at 55 °C, supporting long-term archival and firmware storage needs.
- High endurance — 50K program/erase cycle rating for sustained write-heavy workloads compared to multi-level cell alternatives.
- System-level reliability features — Hardware protection and power-transition lockout reduce risk during margin conditions; ECC requirement enables predictable error management.
- Flexible integration — Parallel DQ port with command/address multiplexing and support for boot-from-NAND and automatic memory download simplifies board-level design for boot and storage functions.
- Industrial temperature and power range — 2.7 V–3.6 V operation and −40 °C to 85 °C rating for use in rugged environments.
- Compact BGA packaging — 67-ball BGA package supports compact PCB layouts while maintaining surface-mount reliability.
Why Choose F59L2G81KA-25BCIG2N?
The F59L2G81KA-25BCIG2N positions itself as a robust SLC NAND option for designs that require predictable endurance, long data retention, and industrial temperature operation. Its block/page organization, automatic program/erase behavior, and system-level features (cache operations, two-plane operation, power-transition protections) make it suitable for embedded storage, imaging, and industrial applications.
Backed by Elite Semiconductor Microelectronics Technology Inc. (ESMT) and JEDEC qualification, this part offers a combination of endurance, system features, and packaging choices ideal for engineers specifying reliable non-volatile memory for long-life and capacity-sensitive products.
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Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A