F59L2G81KA-25BIG2N
| Part Description |
SLC NAND Flash, 2 Gbit, 3.3 V, x8, 63-ball BGA, Industrial |
|---|---|
| Quantity | 786 Available (as of May 4, 2026) |
Specifications & Environmental
| Device Package | BGA-63 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 2 Gbit | Access Time | 20 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 400 µs | Packaging | 63-BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 256M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59L2G81KA-25BIG2N – SLC NAND Flash, 2 Gbit, 3.3 V, x8, 63-ball BGA, Industrial
The F59L2G81KA-25BIG2N is a 2.147 Gbit single-level cell (SLC) NAND flash memory organized as 256M × 8. It implements a parallel x8 I/O interface with command/address/data multiplexed on the DQ port and is offered in a 63-ball BGA package for surface-mount applications.
Designed for industrial use, this device targets high-density non-volatile storage applications such as solid-state file storage, voice recording and image file memory for still cameras. Its combination of SLC endurance, JEDEC qualification and wide voltage and temperature ranges supports reliable operation in demanding embedded systems.
Key Features
- Memory Core & Organization 2.147 Gbit capacity organized as 256M × 8 with a page size of (2K + 128) bytes and block size of 64 pages ((128K + 8K) bytes).
- SLC NAND Technology Single-bit-per-cell architecture with 50K program/erase (P/E) cycle endurance and an uncycled data retention of 10 years (at 55°C) as specified in the datasheet.
- Performance Access time specified at 20 ns; datasheet lists a read cycle of 25 ns and a random read of up to 25 µs. Typical page program time is 400 µs (typ.), with a maximum listed program time of 700 µs.
- Interface & Operations Parallel x8 interface with command/address/data multiplexed on DQ; supports cache program/read, copy-back and two-plane operations plus EDO mode and automatic page 0 read at power-up for boot support.
- Power Vcc supply 3.3 V with an operating range of 2.7 V to 3.6 V.
- Reliability & Data Integrity ECC requirement of 8-bit per 512 bytes; hardware data protection features include program/erase lockout during power transitions and automatic program/erase operations.
- Package & Grade Industrial-grade device in a 63-ball BGA (BGA-63) surface-mount package; JEDEC qualification and operating temperature range of −40 °C to 85 °C.
Typical Applications
- Solid-State File Storage — High-density non-volatile storage for embedded file systems and removable media applications where SLC endurance and retention are required.
- Imaging & Multimedia Devices — Image file memory for still cameras and voice-recording devices that need reliable sequential and random read/write performance.
- Embedded Industrial Systems — Firmware and data storage in industrial controllers and instrumentation operating across −40 °C to 85 °C.
Unique Advantages
- SLC Endurance and Retention — 50K P/E cycles and 10-year uncycled data retention (at 55 °C) provide predictable lifecycle characteristics for long-term deployments.
- Compact, Board-Level Integration — 63-ball BGA package enables high-density board placement for space-constrained designs while supporting surface-mount assembly.
- Flexible Power Window — 2.7 V to 3.6 V operating range with nominal 3.3 V supply simplifies integration with common system rails.
- System Boot and Power-Up Options — Automatic page 0 read at power-up and boot-from-NAND support reduce host initialization complexity.
- Hardware Protection Mechanisms — Program/erase lockout during power transitions and automatic program/erase operations improve data integrity under challenging conditions.
Why Choose F59L2G81KA-25BIG2N?
The F59L2G81KA-25BIG2N combines SLC NAND reliability with a high-density 2 Gbit capacity in a compact 63-ball BGA package, making it well suited for industrial embedded storage where endurance, retention and wide temperature operation matter. Its parallel x8 interface plus cache and two-plane operations provide a balance of throughput and predictable program/erase performance for firmware and file storage applications.
Backed by JEDEC qualification and detailed datasheet specifications from ESMT, this device is aimed at designers and procurement teams seeking a robust, long-life NAND storage component for industrial product lines and embedded systems.
Request a quote or contact our sales team to discuss availability, pricing and integration support for F59L2G81KA-25BIG2N.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
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