F59L2G81KA-25TIG2N
| Part Description |
SLC NAND Flash, 2Gbit (256M x 8), 3.3V, x8, 25ns, 48-pin TSOPI, Industrial |
|---|---|
| Quantity | 1,177 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | TSOPI-48 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 2 Gbit | Access Time | 20 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 400 µs | Packaging | 48-TSOPI | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 256M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59L2G81KA-25TIG2N – SLC NAND Flash, 2Gbit (256M x 8), 3.3V, x8, 25ns, 48-pin TSOPI, Industrial
The F59L2G81KA-25TIG2N is a 2.147‑Gbit SLC NAND flash memory organized as 256M × 8, designed for industrial operating ranges. Built on ESMT's NAND flash architecture, the device provides page-based program/read operations, block erase capability and hardware data protection features suitable for high-density non‑volatile storage.
This device targets embedded storage applications that require robust endurance and long data retention, offering a 3.3V nominal supply (2.7V–3.6V), JEDEC qualification, and a 48‑pin TSOPI surface‑mount package optimized for board-level integration in industrial systems.
Key Features
- Memory Organization — 2.147 Gbit arranged as 256M × 8 with a page size of (2K + 128) bytes and two 2176‑byte static data registers for page transfers.
- Block and Page Structure — Block size = 64 pages = (128K + 8K) bytes; 2,048 blocks per die (LUN) to support high density storage.
- Performance — 25 ns speed grade is offered for fast read cycles as listed in ordering options; random read time specified up to 25 µs (max) in the datasheet.
- Program / Erase Timing — Typical page program time 400 µs (700 µs max); typical block erase time 3 ms (10 ms max), enabling predictable program/erase behavior.
- SLC Reliability — Single‑level cell (1 bit/cell) technology with endurance rated at 50K program/erase cycles and uncycled data retention specified as 10 years at 55°C.
- Data Integrity — ECC requirement specified at 8 bits per 512 bytes and hardware data protection including program/erase lockout during power transitions.
- Interface — Parallel NAND interface with command/address/data multiplexed on the DQ port and x8 I/O configuration; supports cache program/read, copy‑back and two‑plane operations.
- Power and Package — Voltage supply 2.7V–3.6V (VCC nominal 3.3V); available in 48‑pin TSOPI surface‑mount package; JEDEC qualified and RoHS compliant.
- Industrial Temperature Range — Specified operating temperature from −40°C to 85°C for industrial deployments.
Typical Applications
- Solid‑State File Storage — High‑density non‑volatile storage for embedded devices and removable media implementations.
- Imaging and Still Cameras — Storage of image files where page/block organization and reliable program/erase cycles are required.
- Voice Recording — Persistent storage for audio data in consumer and industrial voice recorders.
- Embedded System Boot and Firmware Storage — Supports boot from NAND and automatic memory download functions for system initialization and firmware updates.
Unique Advantages
- Industrial‑grade reliability: −40°C to 85°C operating range and JEDEC qualification support deployment in demanding environments.
- Deterministic program/erase behavior: Typical and maximum program and erase timing values (400 µs / 700 µs page program; 3 ms / 10 ms block erase) enable predictable performance budgeting.
- High endurance SLC technology: 50K P/E cycle rating and 10‑year retention at 55°C provide long operational life for write‑intensive applications.
- On‑chip data management features: Cache program/read, copy‑back, two‑plane operation and automatic page 0 read at power‑up reduce host software complexity.
- Power transition protection: Program/erase lockout during power transitions and hardware data protection help safeguard data integrity in unstable power scenarios.
- Standard packaging and interface: 48‑pin TSOPI surface‑mount package and parallel x8 DQ interface simplify board integration and replacement in existing designs.
Why Choose F59L2G81KA-25TIG2N?
The F59L2G81KA-25TIG2N combines SLC NAND endurance and retention with industrial thermal and voltage ranges to provide a reliable high‑density storage element for embedded systems. Its page/block architecture, on‑chip data registers and power‑transition protections make it suitable for designs that demand predictable program/erase performance and robust data integrity.
This part is well suited for engineers and procurement teams building storage into imaging, audio, boot/firmware and general non‑volatile applications where JEDEC qualification, RoHS compliance and a compact TSOPI‑48 footprint align with system requirements and long‑term field operation.
Request a quote or contact sales to obtain pricing, availability and delivery details for the F59L2G81KA-25TIG2N.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
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