F59L2G81KA-25TIG2N

2Gb NAND Flash Ind.
Part Description

SLC NAND Flash, 2Gbit (256M x 8), 3.3V, x8, 25ns, 48-pin TSOPI, Industrial

Quantity 1,177 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageTSOPI-48Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size2 GbitAccess Time20 nsGradeIndustrial
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page400 µsPackaging48-TSOPI
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization256M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.71

Overview of F59L2G81KA-25TIG2N – SLC NAND Flash, 2Gbit (256M x 8), 3.3V, x8, 25ns, 48-pin TSOPI, Industrial

The F59L2G81KA-25TIG2N is a 2.147‑Gbit SLC NAND flash memory organized as 256M × 8, designed for industrial operating ranges. Built on ESMT's NAND flash architecture, the device provides page-based program/read operations, block erase capability and hardware data protection features suitable for high-density non‑volatile storage.

This device targets embedded storage applications that require robust endurance and long data retention, offering a 3.3V nominal supply (2.7V–3.6V), JEDEC qualification, and a 48‑pin TSOPI surface‑mount package optimized for board-level integration in industrial systems.

Key Features

  • Memory Organization — 2.147 Gbit arranged as 256M × 8 with a page size of (2K + 128) bytes and two 2176‑byte static data registers for page transfers.
  • Block and Page Structure — Block size = 64 pages = (128K + 8K) bytes; 2,048 blocks per die (LUN) to support high density storage.
  • Performance — 25 ns speed grade is offered for fast read cycles as listed in ordering options; random read time specified up to 25 µs (max) in the datasheet.
  • Program / Erase Timing — Typical page program time 400 µs (700 µs max); typical block erase time 3 ms (10 ms max), enabling predictable program/erase behavior.
  • SLC Reliability — Single‑level cell (1 bit/cell) technology with endurance rated at 50K program/erase cycles and uncycled data retention specified as 10 years at 55°C.
  • Data Integrity — ECC requirement specified at 8 bits per 512 bytes and hardware data protection including program/erase lockout during power transitions.
  • Interface — Parallel NAND interface with command/address/data multiplexed on the DQ port and x8 I/O configuration; supports cache program/read, copy‑back and two‑plane operations.
  • Power and Package — Voltage supply 2.7V–3.6V (VCC nominal 3.3V); available in 48‑pin TSOPI surface‑mount package; JEDEC qualified and RoHS compliant.
  • Industrial Temperature Range — Specified operating temperature from −40°C to 85°C for industrial deployments.

Typical Applications

  • Solid‑State File Storage — High‑density non‑volatile storage for embedded devices and removable media implementations.
  • Imaging and Still Cameras — Storage of image files where page/block organization and reliable program/erase cycles are required.
  • Voice Recording — Persistent storage for audio data in consumer and industrial voice recorders.
  • Embedded System Boot and Firmware Storage — Supports boot from NAND and automatic memory download functions for system initialization and firmware updates.

Unique Advantages

  • Industrial‑grade reliability: −40°C to 85°C operating range and JEDEC qualification support deployment in demanding environments.
  • Deterministic program/erase behavior: Typical and maximum program and erase timing values (400 µs / 700 µs page program; 3 ms / 10 ms block erase) enable predictable performance budgeting.
  • High endurance SLC technology: 50K P/E cycle rating and 10‑year retention at 55°C provide long operational life for write‑intensive applications.
  • On‑chip data management features: Cache program/read, copy‑back, two‑plane operation and automatic page 0 read at power‑up reduce host software complexity.
  • Power transition protection: Program/erase lockout during power transitions and hardware data protection help safeguard data integrity in unstable power scenarios.
  • Standard packaging and interface: 48‑pin TSOPI surface‑mount package and parallel x8 DQ interface simplify board integration and replacement in existing designs.

Why Choose F59L2G81KA-25TIG2N?

The F59L2G81KA-25TIG2N combines SLC NAND endurance and retention with industrial thermal and voltage ranges to provide a reliable high‑density storage element for embedded systems. Its page/block architecture, on‑chip data registers and power‑transition protections make it suitable for designs that demand predictable program/erase performance and robust data integrity.

This part is well suited for engineers and procurement teams building storage into imaging, audio, boot/firmware and general non‑volatile applications where JEDEC qualification, RoHS compliance and a compact TSOPI‑48 footprint align with system requirements and long‑term field operation.

Request a quote or contact sales to obtain pricing, availability and delivery details for the F59L2G81KA-25TIG2N.

Request a Quote

















    No file selected



    Our team will respond within 24 hours.


    I agree to receive newsletters and promotional emails. I can unsubscribe at any time.

    Certifications and Membership
    NQA AS9100 CMYK ANAB
    NQA AS9100 ANAB Badge
    ESD2020 Badge
    ESD2020 Association Badge
    GIDEP Badge
    GIDEP Badge
    Suntsu ERAI MemberVerification
    Suntsu ERAI Member Verification
    Available Shipping Methods
    FedEx
    UPS
    DHL
    Accepted Payment Methods
    American Express
    American Express
    Discover
    Discover
    MasterCard
    MasterCard
    Visa
    Visa
    UnionPay
    UnionPay

    Date Founded: 1998


    Headquarters: Hsinchu Science Park, Hsinchu, Taiwan


    Employees: 400+


    Revenue: $377.8 Million


    Certifications and Memberships: N/A


    Featured Products
    Latest News
    keyboard_arrow_up