F59L2G81XA-25BG2B
| Part Description |
SLC NAND Flash, 2 Gbit (256M x 8), 3.3V, x8, 25ns, 63-ball BGA |
|---|---|
| Quantity | 242 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | BGA-63 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 2 Gbit | Access Time | 20 ns | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C – 70°C | Write Cycle Time Word Page | 200 µs | Packaging | 63-BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 256M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59L2G81XA-25BG2B – SLC NAND Flash, 2 Gbit (256M x 8), 3.3V, x8, 25ns, 63-ball BGA
The F59L2G81XA-25BG2B is a 2.147 Gbit single-level cell (SLC) NAND Flash memory device organized as 256M × 8, designed for commercial embedded storage. It implements an asynchronous parallel 8-bit interface with ONFI 1.0 compliance and a low-pin-count hardware interface.
With a 2.7 V–3.6 V supply range (nominal 3.3 V) and a 63-ball BGA surface-mount package, this device targets commercial applications that require reliable non-volatile storage, fast program/read performance, and robust endurance within a 0 °C to +70 °C operating range.
Key Features
- Memory Architecture: Single-level cell (SLC) NAND organized as 256M × 8 (2.147 Gbit) with a device size of 2,048 blocks and two planes of 1,024 blocks per plane.
- Page and Block Structure: Page size 2,176 bytes (2,048 + 128), block size 64 pages (128K + 8K bytes) suitable for page/block-oriented NAND operations.
- Performance: Asynchronous I/O performance with 1/RC/3/RC timing at 25 ns, typical read page latency 25 µs, typical program page 200 µs, and typical erase block 2 ms; access time listed at 20 ns.
- Interface & Protocol: Parallel 8-bit I/O bus using standard NAND control signals (CE#, CLE, ALE, WE#, RE#), Ready/Busy# (R/B#), WP# and ONFI 1.0-compliant command set.
- Reliability & Endurance: Endurance rated to 100,000 program/erase cycles with JESD47G-compliant data retention and uncycled data retention of 10 years.
- Power: Wide supply range 2.7 V–3.6 V (3.3 V nominal) for compatibility with common commercial system rails.
- Package & Mounting: 63-ball BGA (BGA-63) surface-mount package, commercial grade operating temperature 0 °C to +70 °C.
- Device Management & Security: Supports permanent block locking (blocks 47:0), one-time programmable (OTP) mode, block lock, read unique ID, programmable drive strength, two-plane commands (with ECC off), and internal data move operations within a plane.
Typical Applications
- Commercial Embedded Systems: Provides non-volatile program and data storage for commercial embedded designs requiring SLC endurance and retention.
- Board-level Storage Modules: Suited for integration on system PCBs where a compact BGA package and parallel 8-bit interface reduce board footprint and simplify routing.
- Firmware and Code Storage: Designed for storing firmware images and boot code with reliable program/erase endurance and OTP/block-lock options for secure code regions.
Unique Advantages
- SLC Endurance: 100,000 program/erase cycles deliver predictable durability for frequent program/erase use cases.
- ONFI 1.0 Compliance: Standardized NAND protocol support simplifies host controller integration and firmware compatibility.
- Low-pin-count, High-density Packaging: 63-ball BGA offers a compact surface-mount solution for high-density NAND integration without increasing board complexity.
- Robust Data Retention: JESD47G-compliant retention and 10-year uncycled data retention provide long-term storage reliability.
- Flexible Power Envelope: 2.7 V–3.6 V supply range accommodates common 3.3 V system domains for straightforward power design.
Why Choose F59L2G81XA-25BG2B?
The F59L2G81XA-25BG2B combines SLC NAND architecture, ONFI 1.0 compatibility, and a compact 63-ball BGA package to deliver reliable, high-endurance non-volatile storage for commercial embedded designs. Its performance characteristics—fast page read and program times, predictable erase latency, and 20 ns access timing—make it suitable for applications that require deterministic flash behavior and long-term data retention.
This device is ideal for designers seeking a commercially graded NAND Flash with clear endurance and retention specifications, flexible supply range, and a low-pin-count parallel interface that eases board-level integration and firmware migration across densities.
Request a quote or submit an inquiry for F59L2G81XA-25BG2B to get pricing and availability information tailored to your project requirements.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
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