F59L4G161KA-25BCG2R

The F59L4G161KA-25BCG2R is a single-level cell (SLC) NAND Flash memory device by ESMT providing 4.295 Gbit of non-volatile FLASH storage organized as 256M × 16. It implements a parallel x16 memory interface and operates from a 2.7 V to 3.6 V supply, making it suitable for systems that require parallel non-volatile storage with straightforward bus integration.

Designed for surface-mount assembly in a compact 67-ball BGA package and specified for commercial temperature operation (0 °C to 70 °C), this device targets applications where a parallel NAND Flash solution with defined access and write characteristics is required.

Key Features

• Memory Architecture Single-Level Cell (SLC) NAND Flash organized as 256M × 16 for a total capacity of 4.295 Gbit.
• Interface Parallel x16 memory interface for direct integration with parallel memory controllers.
• Performance Fast access characteristics with a specified access time of 20 ns and a write cycle (word/page) time of 400 µs.
• Power Wide operating supply range from 2.7 V to 3.6 V to support typical 3.3 V system rails.
• Package & Mounting Surface-mount 67-ball BGA (BGA-67) package for dense board-level integration.
• Operating Range Commercial temperature grade: 0 °C to 70 °C.
• Regulatory RoHS compliant.
• Device Grade Commercial grade memory suitable for a wide range of standard embedded applications.

Typical Applications

• Parallel Non-Volatile Storage Acts as parallel flash storage where a wide x16 data bus is required for system memory maps.
• Code and Firmware Storage Stores boot code and firmware images in systems that use parallel flash memory for program execution.
• Data Logging and Local Storage Provides non-volatile capacity for local data capture and buffering with defined access and write timing.

Unique Advantages

• SLC NAND architecture: Provides single-level cell FLASH storage for predictable single-bit-per-cell data organization.
• Wide voltage tolerance: Operates from 2.7 V to 3.6 V, enabling compatibility with common 3.3 V systems.
• Parallel x16 interface: Simplifies integration into designs that require a wide data bus and parallel memory access.
• Compact BGA-67 package: Minimizes board area while providing a robust surface-mount footprint.
• Defined timing characteristics: Access time of 20 ns and write-cycle timing of 400 µs for predictable performance planning.
• RoHS compliant: Meets environmental regulations for lead-free assembly.

Why Choose F59L4G161KA-25BCG2R?

The F59L4G161KA-25BCG2R positions itself as a straightforward, parallel SLC NAND Flash option delivering 4.295 Gbit of organized non-volatile storage with clear electrical and timing specifications. Its parallel x16 interface, defined access and write timings, and broad 2.7 V–3.6 V supply range make it suitable for designs that require predictable parallel flash behavior and compact BGA packaging.

Manufactured by ESMT and provided as a commercial-grade, RoHS-compliant device, this part is appropriate for engineers specifying parallel FLASH for code storage, local data retention, or systems where a surface-mount BGA solution is preferred.

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