F59L4G81KA-25BCG2R
| Part Description |
SLC NAND Flash, 4Gbit (512M x 8), 3.3V, x8, 25ns, 67-ball BGA |
|---|---|
| Quantity | 1,055 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | BGA-67 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 4 Gbit | Access Time | 20 ns | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C – 70°C | Write Cycle Time Word Page | 400 µs | Packaging | 67-BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 512M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59L4G81KA-25BCG2R – SLC NAND Flash, 4Gbit (512M x 8), 3.3V, x8, 25ns, 67-ball BGA
The F59L4G81KA-25BCG2R is a 4 Gbit single-level cell (SLC) NAND flash memory organized as 512M × 8, designed for high-density non-volatile storage in commercial electronic systems. It implements a command/address/data multiplexed DQ port and supports parallel interface operation with a 2.7 V to 3.6 V supply range (Vcc nominal 3.3 V).
Targeted use cases include solid-state file storage, voice recording and image file memory for still cameras, as well as system boot and firmware storage. The device combines standard NAND features—large page and block sizes, automatic program/erase operations and cache modes—with endurance and retention characteristics suitable for long-term data storage.
Key Features
- Memory Architecture Organized as 512M × 8 (4 Gbit / 4.295 Gbit nominal) with one plane and 2048 blocks per die; page size is (4K + 256) bytes and block size is 64 pages = (256K + 16K) bytes.
- Performance Read cycle performance is specified at 25 ns and the product data lists an access time of 20 ns; random page read is specified with a maximum of 25 μs. Page program time is typ. 400 μs (700 μs max).
- Program / Erase Automatic program and erase operations with typical block erase time of 3.5 ms (10 ms max). Cache program and cache read operations plus copy-back and EDO mode are supported for higher throughput workflows.
- Endurance & Retention SLC (1 bit/cell) technology with an endurance rating of 60K program/erase cycles and an uncycled data retention of 10 years at 55°C.
- Data Integrity & Protection Hardware data protection features include program/erase lockout during power transitions and a specified ECC requirement of 8-bit per 512-byte to meet system-level reliability targets.
- Interface & Operation Command/register operation with a 4,352-byte data register for page transfers; supports automatic page 0 read at power-up, boot-from-NAND, automatic memory download and partial program cycle support (NOP = 4).
- Power & Supply Operates from 2.7 V to 3.6 V (Vcc 3.3 V typical), suitable for standard 3.3 V system domains.
- Package & Temperature Supplied in a 67-ball BGA package (surface-mount), with an operating temperature range of 0 °C to 70 °C and RoHS-compliant construction.
Typical Applications
- Solid-State File Storage — High-density non-volatile storage for embedded file systems, media storage and removable storage devices that require SLC endurance and retention.
- Voice Recording Systems — Reliable, high-capacity storage for voice data where predictable program/erase timing and retention are important.
- Still Camera Image Memory — Storage for image capture applications leveraging large page sizes and block erase architecture to manage photo data efficiently.
- Boot and Firmware Storage — Supports boot-from-NAND and automatic page 0 read at power-up for firmware and system boot applications.
Unique Advantages
- SLC Reliability: 1 bit per cell architecture and 60K P/E cycle endurance provide robust write/erase durability for demanding storage cycles.
- Long-Term Data Retention: Specified 10-year uncycled retention at 55°C for dependable archival performance in commercial applications.
- Large Page & Block Organization: (4K + 256)-byte page and 64-page block structure enable efficient large-file programming and erase operations.
- Built-in Data Protection: Hardware protection during power transitions plus a defined ECC requirement (8-bit/512-byte) to support system-level data integrity.
- Flexible Boot & Transfer Options: Automatic page 0 read at power-up, boot-from-NAND support and automatic memory download simplify system initialization and deployment.
- Industry Compliance: Device design is compliant to JESD47K specifications, reflecting standardized reliability practices.
Why Choose F59L4G81KA-25BCG2R?
The F59L4G81KA-25BCG2R combines SLC flash endurance and retention with a large page and block architecture to deliver durable, high-density non-volatile storage for commercial embedded systems. Its support for boot-from-NAND, automatic program/erase operations and cache modes make it suitable for applications where reliable firmware storage and high-throughput data handling are required.
This device is well suited for designers and procurement teams building consumer and industrial products that need predictable program/erase timing, long-term data retention and hardware-level protection features, all in a compact 67-ball BGA surface-mount package.
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Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
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