F59L4G81KA-25BIAG2R
| Part Description |
SLC NAND Flash, 4Gbit (512M x 8), 3.3V, x8, 25ns, 63-ball BGA, Automotive |
|---|---|
| Quantity | 382 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | BGA-63 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 4 Gbit | Access Time | 20 ns | Grade | Automotive | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 105°C | Write Cycle Time Word Page | 400 µs | Packaging | 63-BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 512M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | AEC-Q100 | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59L4G81KA-25BIAG2R – SLC NAND Flash, 4Gbit (512M x 8), 3.3V, x8, 25ns, 63-ball BGA, Automotive
The F59L4G81KA-25BIAG2R is a 4.295 Gbit single-level cell (SLC) NAND flash memory device organized as 512M × 8. It provides page- and block-based NAND architecture with built-in data registers and supports standard parallel DQ command/address/data multiplexing for embedded and storage applications.
Engineered for automotive-grade designs, the device operates from 2.7 V to 3.6 V and across a wide temperature range, delivering non-volatile storage suitable for solid-state file storage, imaging, and other systems that require robust high-density flash memory with industry-oriented reliability features.
Key Features
- Memory Core 4.295 Gbit SLC NAND organized as 512M × 8 with 4352-byte static data/register size for transfers between the register and memory cell array.
- Page & Block Architecture Page size: (4K + 256) bytes. Block size: 64 pages = (256K + 16K) bytes. Number of blocks per die (LUN): 2048.
- Performance Access time listed as 20 ns; datasheet read cycle noted at 25 ns and random read time up to 25 µs, enabling fast page and random read operations for embedded storage tasks.
- Program / Erase Timing Typical page program time: 400 µs (typ.), up to 700 µs (max.). Block erase time typical: 3.5 ms, max: 10 ms.
- Reliability & Data Integrity Endurance rated at 60K program/erase cycles. ECC requirement specified as 8-bit per 512 bytes; uncycled data retention rated for 10 years at 55°C.
- Power & Interface Supply voltage range: 2.7 V to 3.6 V. Command/address/data are multiplexed on DQ pins for parallel interface integration.
- Automotive Qualification & Temperature Range Automotive grade with AEC-Q100 qualification and operating temperature range of -40°C to 105°C.
- Package & Mounting 63-ball BGA package (BGA-63) for surface-mount assembly and compact board footprint.
- Additional Functional Features Supports automatic program/erase, cache program/read, copy-back and EDO mode. Hardware protections include program/erase lockout during power transitions and optional automatic page 0 read at power-up.
Typical Applications
- Solid-State File Storage — Large page and block organization supports efficient storage and transfer of large files in embedded storage systems.
- Imaging & Multimedia — Page and block sizes and cache program/read operations accommodate image file storage and sequential write/read workflows for cameras and multimedia devices.
- Automotive Systems — AEC-Q100 qualification and extended temperature range make this device suitable for automotive infotainment, logging, and control module memory.
- Voice & Data Recorders — SLC endurance and retention characteristics support repeated program/erase cycles and long-term data retention for recorder applications.
Unique Advantages
- SLC Endurance — 60K program/erase cycles provide a durable flash option where repeated writes are required, helping extend system lifetime.
- Automotive-Grade Qualification — AEC-Q100 qualification and a -40°C to 105°C operational range address reliability needs for harsh environments.
- Flexible Voltage Range — 2.7 V to 3.6 V supply allows integration into a variety of 3.3 V systems with tolerance for supply variation.
- Large Page & Block Granularity — (4K + 256) byte pages and 64-page blocks simplify management of large files and improve throughput for sequential operations.
- Built-in Data Protection Features — Hardware program/erase lockout during power transitions and ECC guidance (8-bit/512B) support data integrity strategies.
- Compact BGA Package — 63-ball BGA enables high-density board layouts while supporting surface-mount assembly processes.
Why Choose F59L4G81KA-25BIAG2R?
The F59L4G81KA-25BIAG2R combines SLC NAND reliability, automotive-grade qualification, and practical timing and organization for embedded and storage-focused designs. Its mix of endurance, retention, and robust command features makes it suitable for applications that require durable non-volatile storage under extended temperature and supply conditions.
This device is well suited to engineers and procurement teams designing automotive, industrial, and multimedia systems who need a verified SLC NAND solution with clear endurance, ECC guidance, and package options for compact, surface-mount implementations.
Request a quote or submit a purchase inquiry to receive pricing, lead-time, and availability details for the F59L4G81KA-25BIAG2R.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
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