F59L4G81KA-25TIAG2R

4Gb NAND Flash Auto.
Part Description

SLC NAND Flash, 4Gbit, (512M x 8), 3.3V, x8, 25ns, 48-pin TSOPI, Automotive

Quantity 765 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageTSOPI-48Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size4 GbitAccess Time20 nsGradeAutomotive
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C – 105°CWrite Cycle Time Word Page400 µsPackaging48-TSOPI
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization512M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationAEC-Q100ECCNEAR99HTS Code8542.32.00.71

Overview of F59L4G81KA-25TIAG2R – SLC NAND Flash, 4Gbit, (512M x 8), 3.3V, x8, 25ns, 48-pin TSOPI, Automotive

The F59L4G81KA-25TIAG2R is a 4 Gbit SLC NAND Flash memory device organized as 512M × 8 for high-density non-volatile storage. It implements a parallel, multiplexed command/address/data I/O and supports 3.3 V operation (2.7 V–3.6 V) with a 48-pin TSOPI surface-mount package.

Designed for embedded storage roles, the device provides SLC endurance and retention characteristics, AEC-Q100 qualification for automotive-grade designs, and an extended operating temperature range of −40 °C to 105 °C to meet demanding industrial and automotive environments.

Key Features

  • Memory Core 4.295 Gbit (512M × 8) SLC NAND architecture with 4352-byte data register and page size of (4K + 256) bytes for block- and page-oriented storage.
  • Performance Access time specified at 20 ns; datasheet details include a read cycle of 25 ns and random read up to 25 µs (max). Page program and block erase operations support cache program and copy-back operations for efficient data movement.
  • Endurance & Retention SLC technology with endurance rated to 60K program/erase cycles and data retention of 10 years at 55 °C as stated in the datasheet.
  • Program/Erase Timing Typical page program time is 400 µs (typical), up to 700 µs (max); block erase typically 3.5 ms, up to 10 ms (max), enabling predictable timing for firmware and storage management.
  • Power & Voltage Single-supply operation VCC = 3.3 V (2.7 V to 3.6 V) with hardware data protection features including program/erase lockout during power transitions and write-protect support.
  • Interface & Packaging Parallel command/address/data multiplexed DQ port, x8 I/O; supplied in a 48-pin TSOPI (TSOPI-48) surface-mount package (12 mm × 20 mm body, 0.5 mm pitch).
  • Reliability & Qualification Automotive grade with AEC-Q100 qualification and operating temperature range of −40 °C to 105 °C for reliability in harsh environments. ECC requirement: 8-bit per 512 bytes.

Typical Applications

  • Embedded Storage for Consumer Imaging Image file memory in still cameras and devices that require high-density non-volatile storage and reliable program/erase cycles.
  • Voice and Data Recorders Solid-state file storage and voice recording applications that benefit from SLC endurance and predictable program/erase timing.
  • Automotive and Industrial Data Logging Telemetry, data logging, and control systems that require AEC-Q100-qualified memory and extended temperature operation.
  • System Boot and Firmware Storage Boot-from-NAND support, automatic page 0 read at power-up option, and automatic memory download for embedded system firmware and boot images.

Unique Advantages

  • Automotive-Grade Qualification: AEC-Q100 qualification and −40 °C to 105 °C operating range provide traceable reliability for automotive and industrial designs.
  • SLC Endurance and Retention: 60K program/erase cycles and 10-year retention at 55 °C reduce lifecycle risk for long-lived storage applications.
  • Predictable Timing: Documented program and erase times (400 µs page program typical, 3.5 ms block erase typical) enable deterministic flash management and firmware update strategies.
  • Flexible I/O and Block Architecture: 4K+256 byte pages, 64-page blocks, and a single-plane architecture simplify memory management and data transfer in embedded systems.
  • Robust Data Protection: Hardware protections, program/erase lockout during power transitions, and a defined ECC requirement support data integrity under challenging conditions.

Why Choose F59L4G81KA-25TIAG2R?

The F59L4G81KA-25TIAG2R positions itself as a reliable SLC NAND Flash solution for designs that demand automotive-grade qualification, extended temperature operation, and clear endurance and timing specifications. Its parallel x8 interface, compact 48-pin TSOPI package, and documented program/read/erase characteristics make it suitable for embedded storage, boot media, and high-reliability data logging applications.

Engineers seeking predictable timing, long-term data retention, and AEC-Q100 qualification will find the device appropriate for systems where lifecycle robustness and controlled flash management are required.

Request a quote or submit an inquiry to start the procurement process and specify part F59L4G81KA-25TIAG2R for your design needs.

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