F59L4G81KSA-25BCIG2N

4Gb NAND Flash Ind.
Part Description

SLC NAND Flash, 4Gbit, Industrial 67‑ball BGA

Quantity 1,184 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusActive
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageBGA-67Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size4 GbitAccess Time20 nsGradeIndustrial
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page400 µsPackaging67-BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization512M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.71

Overview of F59L4G81KSA-25BCIG2N – SLC NAND Flash, 4Gbit, Industrial 67‑ball BGA

The F59L4G81KSA-25BCIG2N is a 4 Gbit (512M × 8) SLC NAND Flash memory device from ESMT, offered in a 67-ball BGA package for compact surface-mount applications. The device is organized as two stacked 2Gb dies and provides non-volatile parallel NAND storage with a 3.3 V supply range (2.7 V–3.6 V).

Designed for industrial environments, this memory targets high-density embedded storage tasks such as solid-state file storage, voice recording and image file memory for still cameras, offering fast read and program operations with built-in data protection and endurance characteristics suitable for long-term deployments.

Key Features

  • Memory Core and Density — 4.295 Gbit total capacity organized as 512M × 8, implemented as two 2Gb dies for stacked operation.
  • SLC NAND Technology — 1bit-per-cell architecture with reliable CMOS floating-gate technology and an endurance rating of 50K program/erase cycles.
  • Performance — Access time specified at 20 ns with read cycle timing at 25 ns; page program time typically 400 µs and block erase typically 3 ms (datasheet values reported).
  • Page & Block Structure — Page size (2K + 128) bytes with data register of (2K + 128) bytes; block size 64 pages = (128K + 8K) bytes; Number of blocks per die (LUN) = 2048.
  • Interface — Parallel NAND with command/address/data multiplexed on DQ ports and an x8 data bus for direct embedded integration.
  • Power — VCC = 3.3 V operation with allowable supply range from 2.7 V to 3.6 V.
  • Package & Mounting — 67-ball BGA (BGA-67) surface-mount package suitable for compact board layouts.
  • Industrial Temperature Grade — Specified operating temperature from −40 °C to 85 °C for industrial applications.
  • Data Integrity & Reliability — ECC requirement of 8-bit/512-byte, hardware data protection, program/erase lockout during power transitions, and uncycled data retention specified at 10 years at 55 °C.
  • Built-in Flash Functions — Automatic program and erase, cache program/read, copy-back and two-plane operations, boot-from-NAND and automatic memory download options.

Typical Applications

  • Industrial Embedded Storage — Non-volatile program and data storage in industrial controllers and instrumentation operating across −40 °C to 85 °C.
  • Solid-State File Storage — High-density SLC NAND for file systems, firmware images and file-based data logging with long retention and high endurance.
  • Imaging & Voice Recorders — Image file memory for still cameras and voice recording devices where page-oriented program/read operations and cache modes improve throughput.
  • Boot and System Download — Supports automatic page-0 read at power-up and automatic memory download for systems that boot from NAND.

Unique Advantages

  • Industrial Temperature Support: Rated for −40 °C to 85 °C to meet demanding environmental conditions without derated storage specifications.
  • SLC Endurance and Retention: 1bit/cell SLC architecture with 50K P/E cycle endurance and 10-year uncycled data retention at 55 °C for long service life.
  • High-Density, Compact Package: 4 Gbit capacity in a 67-ball BGA surface-mount package reduces PCB area while providing substantial on-board non-volatile storage.
  • Integrated Flash Functionality: Automatic program/erase, cache read/program, two-plane and copy-back operations simplify firmware design and improve throughput.
  • Robust Data Protection: Hardware protections for program/erase during power transitions and an ECC requirement (8-bit/512-byte) support reliable data integrity.
  • Flexible Power Range: 3.3 V nominal operation with a supply window of 2.7 V–3.6 V to accommodate various system power designs.

Why Choose F59L4G81KSA-25BCIG2N?

The F59L4G81KSA-25BCIG2N provides a high-density SLC NAND solution optimized for industrial applications that require durable, long-lived non-volatile storage. With stacked die architecture, support for standard NAND page/block operations, and industrial temperature rating, it suits embedded designs that demand reliable firmware and file storage.

Engineers specifying this device benefit from a combination of SLC endurance, built-in flash management features, compact BGA packaging and JEDEC qualification-level design intent—making it appropriate for products that need robust storage performance and predictable lifecycle characteristics.

Request a quote or submit an inquiry to evaluate F59L4G81KSA-25BCIG2N for your next industrial embedded storage design.

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