F59L4G81KSA-25BCIG2N
| Part Description |
SLC NAND Flash, 4Gbit, Industrial 67‑ball BGA |
|---|---|
| Quantity | 1,184 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | BGA-67 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 4 Gbit | Access Time | 20 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 400 µs | Packaging | 67-BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 512M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59L4G81KSA-25BCIG2N – SLC NAND Flash, 4Gbit, Industrial 67‑ball BGA
The F59L4G81KSA-25BCIG2N is a 4 Gbit (512M × 8) SLC NAND Flash memory device from ESMT, offered in a 67-ball BGA package for compact surface-mount applications. The device is organized as two stacked 2Gb dies and provides non-volatile parallel NAND storage with a 3.3 V supply range (2.7 V–3.6 V).
Designed for industrial environments, this memory targets high-density embedded storage tasks such as solid-state file storage, voice recording and image file memory for still cameras, offering fast read and program operations with built-in data protection and endurance characteristics suitable for long-term deployments.
Key Features
- Memory Core and Density — 4.295 Gbit total capacity organized as 512M × 8, implemented as two 2Gb dies for stacked operation.
- SLC NAND Technology — 1bit-per-cell architecture with reliable CMOS floating-gate technology and an endurance rating of 50K program/erase cycles.
- Performance — Access time specified at 20 ns with read cycle timing at 25 ns; page program time typically 400 µs and block erase typically 3 ms (datasheet values reported).
- Page & Block Structure — Page size (2K + 128) bytes with data register of (2K + 128) bytes; block size 64 pages = (128K + 8K) bytes; Number of blocks per die (LUN) = 2048.
- Interface — Parallel NAND with command/address/data multiplexed on DQ ports and an x8 data bus for direct embedded integration.
- Power — VCC = 3.3 V operation with allowable supply range from 2.7 V to 3.6 V.
- Package & Mounting — 67-ball BGA (BGA-67) surface-mount package suitable for compact board layouts.
- Industrial Temperature Grade — Specified operating temperature from −40 °C to 85 °C for industrial applications.
- Data Integrity & Reliability — ECC requirement of 8-bit/512-byte, hardware data protection, program/erase lockout during power transitions, and uncycled data retention specified at 10 years at 55 °C.
- Built-in Flash Functions — Automatic program and erase, cache program/read, copy-back and two-plane operations, boot-from-NAND and automatic memory download options.
Typical Applications
- Industrial Embedded Storage — Non-volatile program and data storage in industrial controllers and instrumentation operating across −40 °C to 85 °C.
- Solid-State File Storage — High-density SLC NAND for file systems, firmware images and file-based data logging with long retention and high endurance.
- Imaging & Voice Recorders — Image file memory for still cameras and voice recording devices where page-oriented program/read operations and cache modes improve throughput.
- Boot and System Download — Supports automatic page-0 read at power-up and automatic memory download for systems that boot from NAND.
Unique Advantages
- Industrial Temperature Support: Rated for −40 °C to 85 °C to meet demanding environmental conditions without derated storage specifications.
- SLC Endurance and Retention: 1bit/cell SLC architecture with 50K P/E cycle endurance and 10-year uncycled data retention at 55 °C for long service life.
- High-Density, Compact Package: 4 Gbit capacity in a 67-ball BGA surface-mount package reduces PCB area while providing substantial on-board non-volatile storage.
- Integrated Flash Functionality: Automatic program/erase, cache read/program, two-plane and copy-back operations simplify firmware design and improve throughput.
- Robust Data Protection: Hardware protections for program/erase during power transitions and an ECC requirement (8-bit/512-byte) support reliable data integrity.
- Flexible Power Range: 3.3 V nominal operation with a supply window of 2.7 V–3.6 V to accommodate various system power designs.
Why Choose F59L4G81KSA-25BCIG2N?
The F59L4G81KSA-25BCIG2N provides a high-density SLC NAND solution optimized for industrial applications that require durable, long-lived non-volatile storage. With stacked die architecture, support for standard NAND page/block operations, and industrial temperature rating, it suits embedded designs that demand reliable firmware and file storage.
Engineers specifying this device benefit from a combination of SLC endurance, built-in flash management features, compact BGA packaging and JEDEC qualification-level design intent—making it appropriate for products that need robust storage performance and predictable lifecycle characteristics.
Request a quote or submit an inquiry to evaluate F59L4G81KSA-25BCIG2N for your next industrial embedded storage design.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A