F59L4G81KSA-25TIG2N
| Part Description |
SLC NAND Flash, 4Gbit, Industrial |
|---|---|
| Quantity | 904 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | TSOPI-48 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 4 Gbit | Access Time | 20 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 400 µs | Packaging | 48-TSOPI | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 512M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59L4G81KSA-25TIG2N – SLC NAND Flash, 4Gbit, Industrial
The F59L4G81KSA-25TIG2N is a 4 Gbit (512M × 8) Single-Level Cell (SLC) NAND flash memory device organized as two stacked 2Gb dies. It provides parallel NAND operation in a 48-pin TSOPI package with a 3.3 V supply range (2.7 V to 3.6 V) and is specified for industrial operation from −40 °C to 85 °C.
Designed for high-reliability non-volatile storage, the device targets embedded storage use cases such as solid-state file storage, voice and image data memory, and boot/firmware storage where endurance, data retention and JEDEC qualification matter.
Key Features
- Core & Memory Type 4 Gbit SLC NAND flash, implemented as two stacked 2Gb dies for multi-die operations and flexible memory management.
- Organization & Capacity 512M × 8 organization with a page size of (2K + 128) bytes and a data register matching that page size for 2176-byte transfers.
- Performance & Timing 25 ns speed grade (device ordering), read cycle 25 ns (datasheet), and a listed access time of 20 ns; typical page program time 400 µs (typ.), block erase typical 3 ms.
- Endurance & Retention SLC endurance rated to 50K program/erase cycles and uncycled data retention specified as 10 years at 55 °C, with an ECC requirement of 8-bit per 512-byte sector.
- Interface & Operations Parallel NAND interface with command/address/data multiplexed on the DQ port, supporting cache program/read, copy-back, two-plane and EDO modes, plus automatic program/erase handling.
- Power & Protection VCC range 2.7 V to 3.6 V; includes hardware data protection features such as program/erase lockout during power transitions and write-protect support.
- Package & Temperature Surface-mount TSOPI-48 package (12 mm × 20 mm body, 0.5 mm pitch) and industrial temperature grade from −40 °C to 85 °C with JEDEC qualification.
Typical Applications
- Embedded Storage — High-reliability non-volatile storage for embedded systems requiring SLC endurance and long data retention.
- Consumer Imaging & Voice Recording — Image file memory for still cameras and voice recording applications that benefit from the device's page/program architecture and cache operations.
- Boot & Firmware Storage — Supports boot-from-NAND and automatic memory download for firmware storage and system boot sequences.
- Industrial Data Logging — Temperature-rated and JEDEC-qualified storage suitable for industrial logging and data capture where robustness is required.
Unique Advantages
- SLC Endurance: 50K program/erase cycles provide a durable storage medium for write-intensive embedded applications.
- Long Data Retention: Uncycled retention of 10 years at 55 °C supports long-term archival and product lifecycles.
- Wide Supply Range: 2.7 V to 3.6 V operation eases integration across 3.3 V system domains and transient conditions.
- Industrial Temperature Grade: Specified −40 °C to 85 °C for reliable operation in demanding environments.
- Robust Feature Set: Hardware data protection, automatic program/erase control, cache/program/read, two-plane and copy-back operations simplify controller design and improve throughput.
- JEDEC Qualification: Industry-standard qualification helps streamline validation and deployment in production designs.
Why Choose F59L4G81KSA-25TIG2N?
The F59L4G81KSA-25TIG2N positions itself as a dependable SLC NAND solution for designs that require sustained endurance, long data retention and industrial temperature capability. Its stacked-die architecture, matched page/data registers and comprehensive NAND command feature set enable efficient data transfer and in-system management for embedded storage, firmware and imaging applications.
This device is well suited to engineers and procurement teams building industrial and embedded products that need JEDEC-qualified, SLC NAND storage with clear endurance and retention specifications, flexible parallel interfacing, and a compact TSOPI-48 package for surface-mount assembly.
Request a quote or submit an inquiry to receive pricing, availability and technical support for the F59L4G81KSA-25TIG2N. Our team can provide ordering details, lead-time information and application guidance to help you integrate this industrial SLC NAND device into your designs.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A