F59L4G81KSA-25BIG2N
| Part Description |
SLC NAND Flash, 4Gbit, 3.3V, 63-ball BGA (Industrial) |
|---|---|
| Quantity | 452 Available (as of May 6, 2026) |
Specifications & Environmental
| Device Package | BGA-63 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 4 Gbit | Access Time | 20 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 400 µs | Packaging | 63-BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 512M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59L4G81KSA-25BIG2N – SLC NAND Flash, 4Gbit, 3.3V, 63-ball BGA (Industrial)
The F59L4G81KSA-25BIG2N from ESMT is a 4.295 Gbit SLC NAND Flash memory device organized as 512M × 8 and supplied in a 63-ball BGA surface-mount package. Built for industrial use, the device implements parallel NAND architecture with command/address/data multiplexed on the DQ port and supports standard NAND program, erase and read operations.
This device is suited for high-density non-volatile storage in industrial embedded systems, offering a 2.7 V to 3.6 V supply range, JEDEC qualification, and an extended operating temperature range of −40 °C to 85 °C for robust operation in demanding environments.
Key Features
- Memory Architecture 4.295 Gbit SLC NAND organized as 512M × 8 with two stacked 2Gb dies; page size is 2K + 128 bytes and data register size matches the page length (2176 bytes).
- Performance Read cycle is specified at 25 ns and access time listed as 20 ns; random read latency is specified at 25 µs (max.) enabling fast read operations for embedded storage tasks.
- Program & Erase Timing Typical page program time is 400 µs (typ.) with a 700 µs maximum; block erase time is 3 ms (typ.) with a 10 ms maximum, supporting predictable program/erase timing.
- Endurance & Retention SLC cell architecture with endurance rated at 50K program/erase cycles and uncycled data retention of 10 years at 55 °C.
- Supply & I/O Operates from 2.7 V to 3.6 V (VCC ~3.3 V nominal) with an 8-bit parallel DQ interface for command/address/data multiplexing.
- Reliability & Protection Hardware data protection and program/erase lockout during power transitions are supported; ECC requirement is 8-bit per 512 bytes.
- Capacity & Organization Block size is 64 pages (128K + 8K bytes) with 2048 blocks per die (LUN), and support for features such as cache program/read, copy-back, two-plane operation and automatic page 0 read at power-up.
- Package & Grade Industrial-grade device in a 63-ball BGA (BGA-63) surface-mount package with JEDEC qualification and operating range −40 °C to 85 °C.
Typical Applications
- Industrial Embedded Storage High-density non-volatile storage for industrial controllers and data-loggers where extended temperature range and JEDEC qualification are required.
- Solid-State File Storage File and image storage in embedded systems that need predictable program/erase timing and SLC endurance characteristics.
- Boot and Firmware Storage Boot-from-NAND support and automatic page 0 read at power-up make the device suitable for firmware storage and system boot ROM replacement.
- Media and Recording Devices Voice or image file memory in devices that leverage the page and block organization along with cache program/read and copy-back operations.
Unique Advantages
- SLC Endurance and Retention: 50K P/E cycles and 10-year uncycled retention at 55 °C provide predictable longevity for long-life industrial deployments.
- Stacked Die Organization: Two 2Gb dies stacked into a 4Gb device support operations that leverage multi-die arrangements while maintaining standard NAND page and block semantics.
- Predictable Timing: Documented program and erase times (400 µs page program typical; 3 ms block erase typical) enable deterministic system-level flash management.
- Robust Power Range: Wide VCC range (2.7 V–3.6 V) permits operation across common 3.3 V industrial power rails and supports reliable behavior during power transitions via lockout protection.
- System-Level Features: Built-in cache program/read, two-plane operation, copy-back, and automatic memory download/boot options simplify integration for firmware updates and high-throughput transfers.
Why Choose F59L4G81KSA-25BIG2N?
The F59L4G81KSA-25BIG2N combines SLC endurance and retention with a 512M × 8 organization and comprehensive NAND feature set to serve industrial embedded storage requirements. Its JEDEC qualification, broad supply voltage window (2.7–3.6 V) and −40 °C to 85 °C operating range make it suitable for systems that demand stable flash behavior across temperature and power conditions.
This device is appropriate for designers needing predictable program/erase latency, ECC-aware integration (8-bit/512-Byte), and standard NAND capabilities such as cache program/read and boot-from-NAND behavior. The 63-ball BGA package enables compact surface-mount assembly for space-constrained industrial boards.
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Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
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