F59L4G81KA-25BG2R
| Part Description |
SLC NAND Flash, 4Gbit, (512M x 8), 3.3V, x8, 25ns, 63-ball BGA |
|---|---|
| Quantity | 1,627 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | BGA-63 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 4 Gbit | Access Time | 20 ns | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C – 70°C | Write Cycle Time Word Page | 400 µs | Packaging | 63-BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 512M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59L4G81KA-25BG2R – SLC NAND Flash, 4Gbit, (512M x 8), 3.3V, x8, 25ns, 63-ball BGA
The F59L4G81KA-25BG2R is a 4.295 Gbit single-level cell (SLC) NAND flash memory organized as 512M × 8. Designed for high-density non-volatile storage, it implements a parallel x8 DQ interface and supports standard NAND command/address/data multiplexing.
This device targets embedded storage applications that require robust program/erase endurance, reliable data retention, and compact BGA mounting—providing a balance of performance and system-level integration for consumer and industrial designs operating at 3.3 V (2.7 V to 3.6 V).
Key Features
- Memory Core 4.295 Gbit capacity organized as 512M × 8 with SLC (1 bit per cell) architecture for predictable program/erase endurance.
- Page & Block Organization Page size and registers: (4K + 256) bytes; Block size: 64 pages = (256K + 16K) bytes; 2,048 blocks per die (LUN).
- Performance 25 ns speed grade (–25) with support for cache program and cache read operations, copy-back and EDO mode for improved throughput in host systems.
- Program / Erase Timing Typical page program time: 400 µs (typ.), up to 700 µs (max.); typical block erase time: 3.5 ms (typ.), up to 10 ms (max.).
- Reliability & Data Integrity Endurance rated to 60K program/erase cycles with an ECC requirement of 8-bit per 512-byte to support data integrity; uncycled data retention specified to 10 years at 55°C.
- Power Single-supply operation at VCC = 3.3 V (operating range 2.7 V to 3.6 V) with hardware data protection and program/erase lockout during power transitions.
- Interface & Control Command/Address/Data multiplexed DQ port and parallel x8 I/O (I/O0–I/O7) with standard NAND command set support including automatic program and erase operations.
- Package & Temperature Pb‑free 63-ball BGA package (9 mm × 11 mm body, 0.8 mm ball pitch) intended for surface-mount assembly; commercial operating temperature range 0°C to 70°C.
Typical Applications
- Solid-State File Storage High-density SLC NAND capacity and robust erase/program support suitable for compact flash-based storage subsystems.
- Digital Imaging Page and block organization and reliable data retention make it suitable for image file memory in still cameras and imaging modules.
- Voice & Audio Recording Non-volatile, block-erase architecture and predictable program times support voice and audio data logging in embedded products.
- Embedded Boot & Firmware Storage Features such as automatic Page 0 read at power-up and boot-from-NAND support ease implementation of firmware storage and system boot procedures.
Unique Advantages
- SLC Endurance for Longevity: 60K program/erase cycles provide predictable lifetime characteristics important for applications requiring frequent updates.
- Validated Data Retention: Specified 10-year uncycled data retention at 55°C supports longer-term archival and infrequently updated storage needs.
- Flexible Power Window: 2.7 V to 3.6 V supply range enables compatibility with common 3.3 V system rails and tolerance for supply variation.
- Compact BGA Footprint: 63-ball BGA reduces PCB area while enabling high-density mounting for space-constrained embedded designs.
- Built-in Host-Friendly Features: Cache program/read, copy-back, automatic program/erase and boot support simplify firmware and data-management implementations.
- Data Protection Mechanisms: Hardware data protection and lockout during power transitions reduce risk during voltage disturbances.
Why Choose F59L4G81KA-25BG2R?
The F59L4G81KA-25BG2R is positioned for designs that demand reliable, high-density SLC NAND storage with practical performance and system-level features. Its combination of SLC endurance, specified data retention, and host-oriented operations (cache program/read, copy-back, automatic page-read at power-up) supports both product longevity and straightforward integration.
This part suits embedded and consumer designs needing compact packaging, predictable program/erase timing, and robust data integrity measures—delivering long-term value through endurance, supported ECC requirements, and vendor-provided NAND feature set for firmware and file-storage applications.
Request a quote or submit a pricing inquiry to check availability, lead times, and volume pricing for the F59L4G81KA-25BG2R. Our team can provide technical documentation and ordering information to support your design and procurement needs.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
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