F59L4G81KA-25BCIAG2R

4Gb NAND Flash Auto.
Part Description

SLC NAND Flash, 4Gbit (512M × 8), 3.3V, x8, 25ns, 67-ball BGA, Automotive

Quantity 865 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageBGA-67Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size4 GbitAccess Time20 nsGradeAutomotive
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C – 105°CWrite Cycle Time Word Page400 µsPackaging67-BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization512M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationAEC-Q100ECCNEAR99HTS Code8542.32.00.71

Overview of F59L4G81KA-25BCIAG2R – SLC NAND Flash, 4Gbit (512M × 8), 3.3V, x8, 25ns, 67-ball BGA, Automotive

The F59L4G81KA-25BCIAG2R is a 4.295 Gbit SLC NAND Flash memory organized as 512M × 8. Designed for high-density non-volatile storage, it implements a 3.3 V supply range (2.7 V to 3.6 V) and a parallel x8 interface for direct integration into embedded storage applications.

Typical use cases include solid-state file storage, voice recording and image file memory for still cameras and other systems requiring reliable, high-endurance non-volatile storage. The device combines SLC endurance characteristics with automotive-grade qualification for designs that require extended temperature and reliability margins.

Key Features

  • Memory & Organization 4.295 Gbit capacity organized as 512M × 8 with page size (4K + 256) bytes and block size of 64 pages = (256K + 16K) bytes. Number of blocks per die (LUN) = 2048 and single-plane architecture.
  • Performance Access time specified at 20 ns; read cycle 25 ns. Page program typical time 400 µs (700 µs max) and block erase typical 3.5 ms (10 ms max).
  • Endurance & Retention SLC NAND with specified endurance of 60K P/E cycles and uncycled data retention of 10 years at 55 °C.
  • Power & Voltage Operates from 2.7 V to 3.6 V (nominal 3.3 V) with hardware program/erase lockout during power transitions to protect data integrity.
  • Interface & Operation Parallel command/address/data multiplexed DQ port (x8); supports page program, cache program, cache read, copy-back and automatic page read at power-up options.
  • Reliability & Automotive Qualification AEC-Q100 qualification and rated for automotive-grade operating temperatures from −40 °C to 105 °C. Compliant to JESD47K specifications.
  • Data Integrity ECC requirement specified as 8 bit per 512 bytes and includes hardware data protection features and automatic program/erase management.
  • Package Surface-mount BGA package in a 67-ball configuration suitable for compact board-level integration.

Typical Applications

  • Solid-State Storage — High-density non-volatile storage for embedded file systems and removable media implementations.
  • Imaging Devices — Image file memory for still cameras and video capture devices where large page and block architecture accelerate file writes.
  • Voice & Audio Recording — Reliable storage for voice and audio data with SLC endurance for frequent program/erase cycles.
  • Automotive Electronics — Suitable for automotive storage applications that require AEC-Q100 qualification and extended temperature range.

Unique Advantages

  • SLC Longevity: Single-level cell architecture with 60K P/E cycles for extended field life compared to multi-level alternatives.
  • Automotive-Grade Reliability: AEC-Q100 qualification and −40 °C to 105 °C operating range support demanding automotive environments.
  • Large Page & Block Design: 4K+256 byte pages and 64-page blocks improve throughput for large sequential writes and erase efficiency.
  • Robust Data Protection: ECC specification (8 bit/512 byte), hardware protection and power-transition lockout enhance data integrity during operation.
  • Flexible Operation Modes: Cache program/read, copy-back, automatic page read at power-up and EDO mode offer design flexibility for boot and runtime memory workflows.
  • Compact Board-Level Package: 67-ball BGA surface-mount package reduces PCB footprint for space-constrained designs.

Why Choose F59L4G81KA-25BCIAG2R?

The F59L4G81KA-25BCIAG2R positions itself as a dependable SLC NAND solution combining high endurance, automotive qualification and a compact BGA package. Its combination of large page architecture, proven program/erase characteristics and built-in data protection features make it suitable for embedded designs that need reliable, long-lived non-volatile storage across industrial and automotive environments.

Engineers and procurement teams seeking a 4 Gbit SLC NAND with established endurance, ECC guidance and broad operating voltage tolerance will find this device appropriate for storage-intensive applications where longevity and data integrity are priorities.

Request a quote or submit a sales inquiry to get pricing, availability and design support for the F59L4G81KA-25BCIAG2R. Our team can provide technical resources and assistance for integration into your next storage design.

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