F59L4G81KA-25BCIAG2R
| Part Description |
SLC NAND Flash, 4Gbit (512M × 8), 3.3V, x8, 25ns, 67-ball BGA, Automotive |
|---|---|
| Quantity | 865 Available (as of May 6, 2026) |
Specifications & Environmental
| Device Package | BGA-67 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 4 Gbit | Access Time | 20 ns | Grade | Automotive | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 105°C | Write Cycle Time Word Page | 400 µs | Packaging | 67-BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 512M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | AEC-Q100 | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59L4G81KA-25BCIAG2R – SLC NAND Flash, 4Gbit (512M × 8), 3.3V, x8, 25ns, 67-ball BGA, Automotive
The F59L4G81KA-25BCIAG2R is a 4.295 Gbit SLC NAND Flash memory organized as 512M × 8. Designed for high-density non-volatile storage, it implements a 3.3 V supply range (2.7 V to 3.6 V) and a parallel x8 interface for direct integration into embedded storage applications.
Typical use cases include solid-state file storage, voice recording and image file memory for still cameras and other systems requiring reliable, high-endurance non-volatile storage. The device combines SLC endurance characteristics with automotive-grade qualification for designs that require extended temperature and reliability margins.
Key Features
- Memory & Organization 4.295 Gbit capacity organized as 512M × 8 with page size (4K + 256) bytes and block size of 64 pages = (256K + 16K) bytes. Number of blocks per die (LUN) = 2048 and single-plane architecture.
- Performance Access time specified at 20 ns; read cycle 25 ns. Page program typical time 400 µs (700 µs max) and block erase typical 3.5 ms (10 ms max).
- Endurance & Retention SLC NAND with specified endurance of 60K P/E cycles and uncycled data retention of 10 years at 55 °C.
- Power & Voltage Operates from 2.7 V to 3.6 V (nominal 3.3 V) with hardware program/erase lockout during power transitions to protect data integrity.
- Interface & Operation Parallel command/address/data multiplexed DQ port (x8); supports page program, cache program, cache read, copy-back and automatic page read at power-up options.
- Reliability & Automotive Qualification AEC-Q100 qualification and rated for automotive-grade operating temperatures from −40 °C to 105 °C. Compliant to JESD47K specifications.
- Data Integrity ECC requirement specified as 8 bit per 512 bytes and includes hardware data protection features and automatic program/erase management.
- Package Surface-mount BGA package in a 67-ball configuration suitable for compact board-level integration.
Typical Applications
- Solid-State Storage — High-density non-volatile storage for embedded file systems and removable media implementations.
- Imaging Devices — Image file memory for still cameras and video capture devices where large page and block architecture accelerate file writes.
- Voice & Audio Recording — Reliable storage for voice and audio data with SLC endurance for frequent program/erase cycles.
- Automotive Electronics — Suitable for automotive storage applications that require AEC-Q100 qualification and extended temperature range.
Unique Advantages
- SLC Longevity: Single-level cell architecture with 60K P/E cycles for extended field life compared to multi-level alternatives.
- Automotive-Grade Reliability: AEC-Q100 qualification and −40 °C to 105 °C operating range support demanding automotive environments.
- Large Page & Block Design: 4K+256 byte pages and 64-page blocks improve throughput for large sequential writes and erase efficiency.
- Robust Data Protection: ECC specification (8 bit/512 byte), hardware protection and power-transition lockout enhance data integrity during operation.
- Flexible Operation Modes: Cache program/read, copy-back, automatic page read at power-up and EDO mode offer design flexibility for boot and runtime memory workflows.
- Compact Board-Level Package: 67-ball BGA surface-mount package reduces PCB footprint for space-constrained designs.
Why Choose F59L4G81KA-25BCIAG2R?
The F59L4G81KA-25BCIAG2R positions itself as a dependable SLC NAND solution combining high endurance, automotive qualification and a compact BGA package. Its combination of large page architecture, proven program/erase characteristics and built-in data protection features make it suitable for embedded designs that need reliable, long-lived non-volatile storage across industrial and automotive environments.
Engineers and procurement teams seeking a 4 Gbit SLC NAND with established endurance, ECC guidance and broad operating voltage tolerance will find this device appropriate for storage-intensive applications where longevity and data integrity are priorities.
Request a quote or submit a sales inquiry to get pricing, availability and design support for the F59L4G81KA-25BCIAG2R. Our team can provide technical resources and assistance for integration into your next storage design.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A