F59L1G81MB-25TIAG2M
| Part Description |
SLC NAND Flash, 1Gbit (128M x 8), 3.3V, x8, 25ns, 48‑pin TSOPI, Automotive |
|---|---|
| Quantity | 1,376 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | TSOPI-48 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 1 Gbit | Access Time | 20 ns | Grade | Automotive | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 105°C | Write Cycle Time Word Page | 350 µs | Packaging | 48-TSOPI | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 128M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | AEC-Q100 | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59L1G81MB-25TIAG2M – SLC NAND Flash, 1Gbit (128M x 8), 3.3V, x8, 25ns, 48‑pin TSOPI, Automotive
The F59L1G81MB-25TIAG2M is a 1.074 Gbit single-level cell (SLC) NAND flash memory organized as 128M × 8 with an additional spare area. Designed for parallel x8 operation at a nominal 3.3V supply (2.7V–3.6V), it targets embedded and automotive-grade non-volatile storage applications requiring robust endurance and extended temperature operation.
With SLC technology, large page architecture and system-level features such as cache program/read, copy-back and automatic read-at-power-up, this device addresses solid-state mass storage and boot/firmware storage needs where reliability, endurance and automotive qualification are required.
Key Features
- Memory Core 1.074 Gbit SLC NAND organized as 128M × 8 with spare 4M × 8 spare capacity; page size (2K + 64) bytes and block size (128K + 4K) bytes.
- Performance Parallel x8 interface with an access time of 20 ns and support for fast page read and serial access timing; typical page program time aligns with documented write-cycle timing.
- Program / Erase and Endurance Typical program time around 300–400 µs, typical block erase time in the millisecond range and endurance rated at 100K program/erase cycles.
- Data Integrity & Management ECC requirement specified as 4-bit per 528 bytes, hardware data protection, bad‑block protection and copy-back operation to assist defective-block management.
- Advanced Operations Cache program and cache read operations, automatic page‑0 read at power‑up option, OTP operation and automatic memory download features for system convenience.
- Power & Robustness Operates from 2.7V to 3.6V and includes program/erase lockout during power transitions to protect data integrity.
- Package & Temperature Surface-mount TSOPI-48 package (48-pin TSOPI); rated operating temperature −40°C to +105°C for automotive-grade deployments.
- Qualification Automotive grade with AEC‑Q100 qualification.
Typical Applications
- Automotive Storage Non-volatile firmware, logging and large data storage in automotive subsystems where AEC‑Q100 qualification and −40°C to +105°C operation are required.
- Embedded Boot & Firmware On-board boot and firmware storage using the device’s automatic read-at-power-up and boot-from-NAND capabilities.
- Solid-State Mass Storage High-reliability storage for industrial and embedded systems that benefit from SLC endurance and large page/block architecture.
- Streaming Read/Write Workloads Applications that leverage cache read and cache program operations to improve throughput for consecutive page transfers.
Unique Advantages
- Automotive‑Grade Reliability: AEC‑Q100 qualification plus −40°C to +105°C operating range supports automotive and demanding industrial environments.
- High Endurance SLC Technology: 100K program/erase cycles and 10‑year data retention provide long-term durability for firmware and data logging.
- System-Level Data Protection: Hardware data protection, ECC specification (4‑bit/528 bytes) and bad‑block management reduce system design complexity for data integrity.
- Large Page Architecture: (2K + 64)‑byte page and (128K + 4K)‑byte block sizes enable efficient large-file programming and erase operations.
- Performance Enhancements: Cache program/read and copy‑back features improve throughput for sequential and pipelined write/read operations.
- Wide Voltage Range: 2.7V–3.6V operation simplifies integration into 3.3V systems while preserving data protection during power transitions.
Why Choose F59L1G81MB-25TIAG2M?
The F59L1G81MB-25TIAG2M combines SLC endurance and proven NAND architectural features with automotive-grade qualification to deliver reliable non-volatile storage for embedded and vehicle systems. Its large page/block geometry, ECC guidance and hardware protection features make it suitable for boot storage, firmware management and mass‑storage tasks where long-term retention and high write/erase cycle life are important.
This device is appropriate for engineers designing systems that require a balance of performance, durability and automotive-level robustness, offering a clear, verifiable specification set for procurement and system integration.
Request a quote or contact sales to discuss availability, pricing and volume options for the F59L1G81MB-25TIAG2M.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
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