F59L1G81MB-25TIAG2M

1Gb NAND Flash Auto.
Part Description

SLC NAND Flash, 1Gbit (128M x 8), 3.3V, x8, 25ns, 48‑pin TSOPI, Automotive

Quantity 1,376 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageTSOPI-48Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size1 GbitAccess Time20 nsGradeAutomotive
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C – 105°CWrite Cycle Time Word Page350 µsPackaging48-TSOPI
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization128M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationAEC-Q100ECCNEAR99HTS Code8542.32.00.71

Overview of F59L1G81MB-25TIAG2M – SLC NAND Flash, 1Gbit (128M x 8), 3.3V, x8, 25ns, 48‑pin TSOPI, Automotive

The F59L1G81MB-25TIAG2M is a 1.074 Gbit single-level cell (SLC) NAND flash memory organized as 128M × 8 with an additional spare area. Designed for parallel x8 operation at a nominal 3.3V supply (2.7V–3.6V), it targets embedded and automotive-grade non-volatile storage applications requiring robust endurance and extended temperature operation.

With SLC technology, large page architecture and system-level features such as cache program/read, copy-back and automatic read-at-power-up, this device addresses solid-state mass storage and boot/firmware storage needs where reliability, endurance and automotive qualification are required.

Key Features

  • Memory Core  1.074 Gbit SLC NAND organized as 128M × 8 with spare 4M × 8 spare capacity; page size (2K + 64) bytes and block size (128K + 4K) bytes.
  • Performance  Parallel x8 interface with an access time of 20 ns and support for fast page read and serial access timing; typical page program time aligns with documented write-cycle timing.
  • Program / Erase and Endurance  Typical program time around 300–400 µs, typical block erase time in the millisecond range and endurance rated at 100K program/erase cycles.
  • Data Integrity & Management  ECC requirement specified as 4-bit per 528 bytes, hardware data protection, bad‑block protection and copy-back operation to assist defective-block management.
  • Advanced Operations  Cache program and cache read operations, automatic page‑0 read at power‑up option, OTP operation and automatic memory download features for system convenience.
  • Power & Robustness  Operates from 2.7V to 3.6V and includes program/erase lockout during power transitions to protect data integrity.
  • Package & Temperature  Surface-mount TSOPI-48 package (48-pin TSOPI); rated operating temperature −40°C to +105°C for automotive-grade deployments.
  • Qualification  Automotive grade with AEC‑Q100 qualification.

Typical Applications

  • Automotive Storage  Non-volatile firmware, logging and large data storage in automotive subsystems where AEC‑Q100 qualification and −40°C to +105°C operation are required.
  • Embedded Boot & Firmware  On-board boot and firmware storage using the device’s automatic read-at-power-up and boot-from-NAND capabilities.
  • Solid-State Mass Storage  High-reliability storage for industrial and embedded systems that benefit from SLC endurance and large page/block architecture.
  • Streaming Read/Write Workloads  Applications that leverage cache read and cache program operations to improve throughput for consecutive page transfers.

Unique Advantages

  • Automotive‑Grade Reliability: AEC‑Q100 qualification plus −40°C to +105°C operating range supports automotive and demanding industrial environments.
  • High Endurance SLC Technology: 100K program/erase cycles and 10‑year data retention provide long-term durability for firmware and data logging.
  • System-Level Data Protection: Hardware data protection, ECC specification (4‑bit/528 bytes) and bad‑block management reduce system design complexity for data integrity.
  • Large Page Architecture: (2K + 64)‑byte page and (128K + 4K)‑byte block sizes enable efficient large-file programming and erase operations.
  • Performance Enhancements: Cache program/read and copy‑back features improve throughput for sequential and pipelined write/read operations.
  • Wide Voltage Range: 2.7V–3.6V operation simplifies integration into 3.3V systems while preserving data protection during power transitions.

Why Choose F59L1G81MB-25TIAG2M?

The F59L1G81MB-25TIAG2M combines SLC endurance and proven NAND architectural features with automotive-grade qualification to deliver reliable non-volatile storage for embedded and vehicle systems. Its large page/block geometry, ECC guidance and hardware protection features make it suitable for boot storage, firmware management and mass‑storage tasks where long-term retention and high write/erase cycle life are important.

This device is appropriate for engineers designing systems that require a balance of performance, durability and automotive-level robustness, offering a clear, verifiable specification set for procurement and system integration.

Request a quote or contact sales to discuss availability, pricing and volume options for the F59L1G81MB-25TIAG2M.

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