F59L1G81MB-25BIAG2M
| Part Description |
SLC NAND Flash, 1Gbit, (128M x 8), 3.3V, x8, 25ns, 63-ball BGA, Automotive |
|---|---|
| Quantity | 478 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | BGA-63 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 1 Gbit | Access Time | 20 ns | Grade | Automotive | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 105°C | Write Cycle Time Word Page | 350 µs | Packaging | 63-BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 128M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | AEC-Q100 | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59L1G81MB-25BIAG2M – SLC NAND Flash, 1Gbit, (128M x 8), 3.3V, x8, 25ns, 63-ball BGA, Automotive
The F59L1G81MB-25BIAG2M is a 1.074 Gbit SLC NAND Flash memory organized as 128M x 8. It implements single-level-cell NAND architecture with a parallel x8 interface and supports 3.3 V operation (2.7 V – 3.6 V supply range).
Designed for automotive and solid-state mass storage applications, this device provides block-erasable flash storage with built-in features for boot support, bad-block protection and accelerated program/read throughput via cache and copy-back operations.
Key Features
- Memory Core 1.074 Gbit capacity organized as 128M x 8 with an additional spare area ((128M + 4M) × 8bit) and a data register ((2K + 64) × 8bit).
- Page and Block Organization Page size: (2K + 64) bytes. Block erase granularity: (128K + 4K) bytes per block.
- Performance Page read serial access with 25 ns cycle time per byte and an AccessTime listed at 20 ns; random read typical timings available in the datasheet.
- Program / Erase Timing Typical program time around 300 µs and typical block erase time around 4 ms (datasheet typical values).
- Endurance & Data Retention Endurance specified at 100K program/erase cycles and data retention of 10 years.
- Error Management ECC requirement: 4-bit per 528 bytes; supports bad-block protect and OTP operation to help manage data integrity and factory-programmed regions.
- Advanced Flash Functions Cache program, cache read, copy-back, automatic program/erase and automatic page 0 read at power-up options for optimized throughput and boot support.
- Interface & I/O Command/address/data multiplexed I/O port supporting parallel x8 operation and NOP/EDO modes as described in the datasheet.
- Power & Voltage Single-supply operation across 2.7 V to 3.6 V.
- Automotive Qualification & Temperature Grade: Automotive with AEC-Q100 qualification and an operating temperature range of −40 °C to +105 °C.
- Package & Mounting 63-ball BGA (BGA-63) package for surface-mount assembly.
- Reliability Features Hardware data protection and program/erase lockout during power transitions to protect memory integrity.
Typical Applications
- Automotive Storage Systems Non-volatile local storage and boot media in automotive electronics leveraging AEC-Q100 qualification and −40 °C to +105 °C operating range.
- Solid-State Mass Storage Raw NAND storage for embedded mass-storage designs and controllers where SLC endurance and data retention are required.
- Boot and Firmware Storage Systems requiring boot-from-NAND support and automatic page 0 read at power-up to simplify initialization and firmware delivery.
- Industrial Embedded Systems Rugged industrial applications needing extended temperature operation and high program/erase endurance.
Unique Advantages
- Automotive-grade qualification: AEC-Q100 qualification and an extended −40 °C to +105 °C operating range support deployment in automotive-grade systems.
- SLC endurance and retention: 100K program/erase cycles and 10-year data retention provide long-term robustness for critical embedded data.
- Performance features for streaming and boot: Cache read/cache program and automatic page 0 read at power-up reduce system boot times and improve sequential throughput.
- Flexible block and page architecture: (2K + 64)-byte pages and (128K + 4K)-byte blocks allow efficient management of large data and firmware images.
- Hardware protection mechanisms: Built-in hardware data protection and program/erase lockout during power transitions help prevent data corruption during unstable power events.
- Compact surface-mount BGA package: 63-ball BGA (BGA-63) supports high-density board layouts and automated assembly.
Why Choose F59L1G81MB-25BIAG2M?
The F59L1G81MB-25BIAG2M combines SLC NAND reliability and endurance with automotive-grade qualification to meet demanding embedded storage requirements. Its parallel x8 interface, cache and copy-back features, and robust program/erase characteristics make it suitable for boot media, firmware storage and mass-storage implementations in automotive and industrial environments.
With documented ECC requirements, hardware protection features and typical timing data provided in the datasheet, this device is aimed at engineers and procurement teams designing reliable, long-life storage into systems that require traceable performance and automotive qualification.
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Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
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