F59L1G81MB-25BCIAG2M

1Gb NAND Flash Auto.
Part Description

SLC NAND Flash, 1Gbit, 3.3V, x8, 67-ball BGA, Automotive

Quantity 362 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageBGA-67Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size1 GbitAccess Time20 nsGradeAutomotive
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C – 105°CWrite Cycle Time Word Page350 µsPackaging67-BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization128M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationAEC-Q100ECCNEAR99HTS Code8542.32.00.71

Overview of F59L1G81MB-25BCIAG2M – SLC NAND Flash, 1Gbit, 3.3V, x8, 67-ball BGA, Automotive

The F59L1G81MB-25BCIAG2M is a 1.074 Gbit single-level cell (SLC) NAND flash memory organized as 128M × 8. It implements parallel NAND architecture with command/address/data multiplexed I/O and is offered in a 67-ball BGA surface-mount package.

Designed for embedded and automotive applications, this device delivers non-volatile block-erasable storage with on‑chip features for program/erase management, boot support and hardware data protection. Key value comes from its automotive qualification (AEC‑Q100), wide operating temperature range and endurance characteristics suitable for robust storage designs.

Key Features

  • Memory Core 1.074 Gbit SLC NAND organized as 128M × 8 with an extra 4M × 8 spare array and page size (2K + 64) bytes for page program and read operations.
  • Performance Product data lists an access time of 20 ns; series datasheet indicates a 25 ns cycle time per byte for page-mode read operations. Random read and serial access timings are documented in the series datasheet.
  • Program / Erase Typical program times are in the 300–400 µs range and typical block erase times are around 3 ms; specification lists a write cycle time (word/page) of 350 µs.
  • Endurance & Retention Endurance specified at 100K program/erase cycles and data retention of 10 years (series datasheet).
  • Data Integrity ECC requirement specified as 4 bit per 528 bytes. Features include bad-block protection, cache program/read, copy-back operation and hardware data protection.
  • Interface & I/O Parallel NAND interface with command/address/data multiplexed I/O port; supports cache operations, EDO mode, OTP and automatic page 0 read at power-up (series features).
  • Power Single supply operation across 2.7 V to 3.6 V.
  • Package & Mounting Surface-mount 67-ball BGA (BGA-67) package for compact board-level integration.
  • Automotive Qualification & Temperature AEC‑Q100 qualified grade with an operating temperature range of −40 °C to 105 °C.

Typical Applications

  • Automotive Systems Non-volatile code and data storage for automotive ECUs, infotainment and body electronics where AEC‑Q100 qualification and −40 °C to 105 °C operation are required.
  • Embedded Storage & Boot Media NAND boot support and automatic page‑0 read at power-up make the device suitable for system boot and embedded firmware storage.
  • Industrial Control & Instrumentation High endurance and broad voltage/temperature ranges support logging, firmware updates and robust data retention in industrial environments.
  • Solid‑State Mass Storage SLC NAND architecture and cache/program features support efficient sequential page programming and streaming reads for solid‑state storage applications.

Unique Advantages

  • AEC‑Q100 Automotive Qualification: Packaged and qualified for automotive use, supporting automotive-grade temperature and reliability requirements.
  • SLC Endurance and Retention: 100K program/erase cycles and 10-year data retention provide predictable lifecycle behavior for long-lived applications.
  • Flexible Page and Block Management: (2K + 64) byte pages, cache program/read and copy-back operations simplify management of large data transfers and defective blocks.
  • Robust Data Protection Features: Hardware data protection, program/erase lockout during power transitions and bad-block protection reduce risk during power events and field operation.
  • Compact Board Integration: 67-ball BGA package enables dense mounting for space-constrained designs while providing a parallel NAND interface for direct system integration.
  • Wide Supply Range: 2.7 V to 3.6 V operation accommodates common system rails and simplifies power-domain integration.

Why Choose F59L1G81MB-25BCIAG2M?

The F59L1G81MB-25BCIAG2M provides a purpose-built SLC NAND solution for embedded and automotive storage needs, combining established NAND features (cache program/read, copy-back, bad-block management) with automotive qualification and a wide operating temperature range. Its endurance, retention and ECC requirements make it suitable for applications requiring predictable storage life and data integrity.

This part is appropriate for engineers designing systems that require compact, surface-mount non‑volatile memory with parallel NAND interface, onboard data protection features and qualification for automotive use under AEC‑Q100.

Request a quote or submit a sales inquiry to check availability, lead times and volume pricing for the F59L1G81MB-25BCIAG2M. Our team can provide detailed ordering information and support for integration into your design.

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