F59L1G81LB-IP(2M)
| Part Description |
SLC NAND Flash, x8, 3.3V, ECC 1bit/528Byte |
|---|---|
| Quantity | 206 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | Memory Format | NAND Flash | Technology | SLC NAND Flash | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 1 Gbit | Access Time | 20 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 350 µs | Packaging | 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 1G x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59L1G81LB-IP(2M) – SLC NAND Flash, x8, 3.3V, ECC 1bit/528Byte
The F59L1G81LB-IP(2M) is an industrial-grade Single-Level Cell (SLC) NAND Flash memory device from ESMT. It provides 1.074 Gbit of non-volatile storage in an x8 parallel interface, optimized for solid-state mass storage and embedded firmware/boot applications.
Built for robust embedded systems, the device combines SLC endurance and long data retention with NAND features such as cache program/read, copy-back, Boot from NAND, Automatic Page 0 Read at power-up, and Automatic Memory Download to simplify firmware storage and system startup.
Key Features
- Memory Architecture 1.074 Gbit capacity organized as 1G × 8 with a memory cell array of (128M + 4M) × 8 and a data register of (2K + 64) × 8 bytes. Page size is (2K + 64) bytes (2,112 bytes) and block size is (128K + 4K) bytes.
- SLC Technology & Endurance Single-level cell (1 bit per memory cell) NAND with endurance rated at 100K program/erase cycles and data retention of 10 years.
- Performance Fast access characteristics with specified access time of 20 ns. Random read up to 25 µs and serial access down to 25 ns (3.3V). Typical page program and erase operations are supported with high-throughput cache program and cache read features.
- Power & Interface Operates over a wide supply range of 2.7 V to 3.6 V and uses a parallel, multiplexed command/address/data I/O port for simple integration into embedded systems.
- Data Integrity & Protection ECC requirement of 1 bit per 528 bytes, plus hardware data protection, bad-block protection, and program/erase lockout during power transitions to safeguard stored data.
- Boot & System Features Supports Boot from NAND, Automatic Page 0 Read at Power-Up, Automatic Memory Download, OTP operation, copy-back, and cache program/read to improve firmware load and update workflows.
- Packaging & Industrial Grade Available in multiple surface-mount packages: 48-pin TSOPI, 63-ball BGA, and 67-ball BGA. JEDEC-qualified and specified for industrial operating temperatures from −40 °C to 85 °C.
Typical Applications
- Solid-state mass storage — Provides SLC reliability and NAND page/block architecture for cost-effective embedded storage solutions and streaming data reads.
- Boot and firmware storage — Boot from NAND, Automatic Page 0 Read at power-up, and Automatic Memory Download simplify firmware storage and system initialization.
- Industrial embedded systems — Industrial temperature rating (−40 °C to 85 °C) and JEDEC qualification make this device suitable for robust embedded applications.
- Reliable data logging and firmware updates — High endurance (100K P/E cycles), 10-year retention, and ECC requirement support long-term data integrity in update-heavy designs.
Unique Advantages
- SLC endurance and retention: 100K program/erase cycles and 10-year data retention deliver reliable service life for write-intensive and long-term storage needs.
- Integrated boot support: Built-in Boot from NAND and Automatic Page 0 Read at Power-Up reduce system complexity for firmware-centric designs.
- Flexible integration: Parallel interface and multiple surface-mount packages (TSOPI and BGA options) allow design flexibility across form factors.
- Robust data protection: ECC requirement of 1 bit/528 bytes, hardware data protection, and bad-block management help maintain data integrity under real-world conditions.
- Wide operating range: 2.7 V–3.6 V supply range and industrial temperature rating support a broad set of embedded environments.
Why Choose F59L1G81LB-IP(2M)?
The F59L1G81LB-IP(2M) positions itself as a durable, engineer-friendly NAND storage option for industrial and embedded designs that require SLC reliability, built-in boot features, and long-term data retention. Its combination of endurance, ECC requirements, and power/temperature flexibility make it suitable for systems where data integrity and reliable boot behavior are priorities.
Manufactured by ESMT and JEDEC-qualified, this part is aimed at designs that need predictable performance, robust protection features, and multiple package choices to fit board-level constraints.
Request a quote or submit an inquiry for F59L1G81LB-IP(2M) to receive pricing, availability, and further technical information tailored to your application needs.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A