F59L1G81MB-25BCIG2M
| Part Description |
SLC NAND Flash, 1 Gbit (128M × 8), 3.3V, x8, 67-ball BGA, Industrial |
|---|---|
| Quantity | 1,392 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | BGA-67 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 1 Gbit | Access Time | 20 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 350 µs | Packaging | 67-BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 128M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59L1G81MB-25BCIG2M – SLC NAND Flash, 1 Gbit (128M × 8), 3.3V, x8, 67-ball BGA, Industrial
The F59L1G81MB-25BCIG2M from ESMT is a 1.074 Gbit single-level cell (SLC) NAND flash device organized as 128M × 8 with spare area and a parallel x8 interface. Built for industrial applications, it supports a 2.7 V to 3.6 V supply and an operating temperature range of –40 °C to 85 °C.
This device targets industrial embedded storage, boot media and firmware storage where durability, predictable program/erase cycles and fast page and cache operations are required. Key value propositions include SLC endurance, page-oriented architecture with cache capabilities, and JEDEC qualification for consistent system integration.
Key Features
- Memory Architecture 1.074 Gbit SLC organization (128M × 8) with spare area; memory cell array documented as (128M + 4M) × 8 bits and a data register of (2K + 64) × 8 bits for page operations.
- Page & Block Structure Page program size of (2K + 64) bytes and block erase unit of (128K + 4K) bytes, enabling block-level erase and page-level program/read workflows.
- Performance Specified access time of 20 ns with support for fast page-mode and cache operations. Page read and cache read/program features improve throughput for sequential data transfers.
- Program/Erase Timing Typical program time around 300–400 µs and typical block erase time near 3–4 ms; write-cycle time for word/page listed as 350 µs.
- Endurance & Data Retention Endurance rated to 100K program/erase cycles and data retention specified at 10 years, providing longevity for industrial deployments.
- Reliability & ECC ECC requirement noted as 4-bit per 528 bytes; features include bad-block protection, copy-back, automatic program/erase and program/erase lockout during power transitions.
- Interface & Features Parallel command/address/data multiplexed I/O port with support for cache program/read, copy-back, OTP operation, automatic read at power-up and boot-from-NAND options.
- Power & Temperature Wide supply range of 2.7 V to 3.6 V and industrial operating temperature from –40 °C to 85 °C.
- Package & Mounting Delivered in a 67-ball BGA (BGA-67) surface-mount package suitable for compact, rugged board designs.
- Standards & Compliance JEDEC qualification and RoHS compliant.
Typical Applications
- Industrial Embedded Storage Reliable SLC storage for data logging and non-volatile storage in embedded industrial controllers operating across –40 °C to 85 °C.
- Boot Media for Embedded Systems Supports boot-from-NAND and automatic read-at-power-up options for system boot and firmware initialization.
- Firmware and Field Upgrades OTP support, automatic memory download and cache programming simplify firmware storage and in-field update workflows.
- Solid-State Mass Storage Page and cache operations alongside copy-back and bad-block protection provide a foundation for robust solid-state storage implementations.
Unique Advantages
- High Endurance: 100K program/erase cycles provide robust lifecycle characteristics for industrial applications that require frequent updates.
- SLC Reliability and Retention: Single-level cell architecture and 10-year data retention help ensure long-term data integrity for critical storage.
- Flexible Power Envelope: Operates across a 2.7 V–3.6 V range to accommodate a variety of system power rails and design constraints.
- Industrial Temperature Range: –40 °C to 85 °C rating supports deployment in harsh and wide-temperature environments.
- Throughput-Enhancing Features: Cache program/read and copy-back operations accelerate large or sequential data transfers and optimize block management.
- Compact, Surface-Mount Packaging: 67-ball BGA (BGA-67) enables compact board layouts for space-constrained industrial designs.
Why Choose F59L1G81MB-25BCIG2M?
The F59L1G81MB-25BCIG2M combines SLC NAND robustness with features tailored for industrial embedded storage: large page and block architecture, cache and copy-back operations for throughput, and endurance and retention ratings suitable for demanding applications. JEDEC qualification and RoHS compliance simplify qualification and deployment in regulated manufacturing environments.
This device is well suited for engineers and procurement teams building industrial controllers, embedded systems that require reliable boot/media storage, and solid-state storage solutions where predictable program/erase behavior and long-term data retention matter.
Request a quote or submit an inquiry to start a procurement or evaluation for the F59L1G81MB-25BCIG2M and include your required volumes and any technical questions to accelerate design integration.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A