F59L1G81LB-25TIAG2M

1Gb NAND Flash Auto.
Part Description

SLC NAND Flash, 1Gbit (128M×8), 3.3V, x8, 25ns, 48-pin TSOPI, Automotive

Quantity 684 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageTSOPI-48Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size1 GbitAccess Time20 nsGradeAutomotive
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C – 105°CWrite Cycle Time Word Page350 µsPackaging48-TSOPI
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization128M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationAEC-Q100ECCNEAR99HTS Code8542.32.00.71

Overview of F59L1G81LB-25TIAG2M – SLC NAND Flash, 1Gbit (128M×8), 3.3V, x8, 25ns, 48-pin TSOPI, Automotive

The F59L1G81LB-25TIAG2M is a single-level-cell (SLC) NAND Flash memory device from ESMT, organized as 128M×8 (1.074 Gbit) with a parallel x8 interface. Designed for robust non-volatile storage, it targets applications that require deterministic program/erase endurance, long data retention and operation across extended temperature ranges.

Built with NAND architecture and features such as cache program/read, copy-back and automatic read-at-power-up, this device is suited for automotive and industrial embedded storage tasks where reliability and performance are essential.

Key Features

  • Memory Capacity & Organization – 1.074 Gbit capacity arranged as 128M×8 with spare area; page size (2K + 64) bytes and block size (128K + 4K) bytes.
  • NAND SLC Technology – 1 bit per memory cell (SLC) architecture providing endurance and data retention suitable for demanding write/erase cycles.
  • Performance – Specified access time of 20 ns and supports serial/page read at 25 ns cycle time per byte; write/program timing includes a write cycle time (word/page) of 350 µs (specifications) and a typical program time noted as 400 µs in the datasheet.
  • Endurance & Retention – Endurance rated at 100K program/erase cycles with data retention of 10 years.
  • Interface & Features – Parallel command/address/data multiplexed I/O port with cache program/read, copy-back operation, OTP operation, automatic page 0 read at power-up and boot-from-NAND support.
  • Power – Single supply operation across 2.7 V to 3.6 V (nominal 3.3 V).
  • Automotive Qualification & Temperature – Grade: Automotive with AEC-Q100 qualification and operating temperature range of −40 °C to 105 °C.
  • Package & Mounting – Surface-mount TSOPI package, 48-pin (TSOPI-48) form factor for board-level integration.
  • Reliability Supports – ECC requirement of 1 bit per 528 bytes and hardware data protection features, including program/erase lockout during power transitions and bad-block protection.

Typical Applications

  • Automotive Systems – Non-volatile storage for infotainment, telematics and control modules where AEC‑Q100 qualification and extended temperature operation are required.
  • Embedded Code & Boot Storage – Supports boot-from-NAND and automatic read-at-power-up for system boot code and firmware storage.
  • Industrial Data Logging – Reliable SLC endurance and long retention for field data logging and configuration storage in industrial equipment.
  • Solid-State Mass Storage – NAND architecture, cache and copy-back features optimize throughput for streaming or large-file write operations in embedded storage applications.

Unique Advantages

  • Automotive‑grade Reliability – AEC‑Q100 qualification and −40 °C to 105 °C operating range make the device suitable for demanding vehicle environments.
  • High Endurance – 100K program/erase cycles provide longevity for applications with frequent update requirements.
  • Deterministic Retention – 10‑year data retention supports long-term storage of firmware and critical data.
  • Flexible Page/Block Management – Page program (2K+64 bytes), block erase segmentation, copy-back and bad-block-protect simplify defect management and preserve valid data during erase cycles.
  • Fast Read and Program Throughput – 20 ns access specification with cache read/program and 25 ns serial read support help accelerate streaming and sequential page operations.
  • System-Level Safety Features – Hardware protection against program/erase during power transitions and ECC requirement guidance enable robust system designs.

Why Choose F59L1G81LB-25TIAG2M?

The F59L1G81LB-25TIAG2M combines SLC NAND robustness with features tailored for embedded and automotive storage: high endurance, long retention, built-in ECC guidance, and power-up/boot capabilities. Its TSOPI-48 package and parallel x8 interface make it straightforward to integrate into board-level designs that require reliable, non-volatile program and data storage.

Manufactured by ESMT and qualified to automotive standards, this device is well suited for engineers and procurement teams building systems that demand durability, predictable performance and support for in-field firmware/boot management.

Request a quote or submit an inquiry to get pricing, lead time and availability for the F59L1G81LB-25TIAG2M.

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