F59D4G81XB-IP(2X)
| Part Description |
Automotive grade -40~85°/ -40~105°C, SLC NAND Flash, 1.8V |
|---|---|
| Quantity | 1,085 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | Memory Format | NAND Flash | Technology | SLC NAND Flash | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 4 Gbit | Access Time | 25 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.5V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 200 µs | Packaging | 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 512M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59D4G81XB-IP(2X) – Automotive grade -40~85°/ -40~105°C, SLC NAND Flash, 1.8V
The ESMT F59D4G81XB (2X) is a 1.8V single-level cell (SLC) NAND flash memory device organized as 512M × 8 and offering 4.295 Gbit of non-volatile storage. Designed as an industrial-grade NAND solution, it provides ONFI 1.0-compliant asynchronous parallel interface and a low-voltage 1.8 V supply for embedded storage and firmware applications.
With SLC technology, internal ECC options, and up to 100,000 program/erase cycles, the device targets applications that require durable, long-retention non-volatile memory in temperature ranges down to −40 °C.
Key Features
- Memory Technology Single-level cell (SLC) NAND flash organized as 512M × 8 delivering 4.295 Gbit of non-volatile storage.
- Voltage and Interface 1.8 V supply range (1.7 V–1.95 V documented in the datasheet) with a parallel asynchronous I/O interface and ONFI 1.0 compliance for command/address/data operations.
- Performance and Timing Asynchronous I/O performance with specified access times; typical program/page and read/page timings include program page ~200 μs (typ) and read page down to 30–170 μs depending on ECC configuration.
- Memory Organization & Capacity Page size of 4,352 bytes (4,096 + 256 spare), block size of 64 pages, single plane organization and device size of 4 Gbit (512M × 8).
- Reliability & Endurance Endurance rated to 100,000 program/erase cycles with uncycled data retention documented for 10 years at 85 °C and JESD47G-compliant data retention practices.
- Data Integrity & Management 8-bit internal ECC available (disabled by default, toggled via SET FEATURE), permanent block locking, block lock/OTP mode and internal data-move support within a plane.
- Command & Feature Set ONFI NAND protocol with advanced commands including program/read page cache modes, read unique ID, programmable drive strength, and operation status reporting (status byte, R/B#).
- Package & Mounting Multiple surface-mount packages available: 48‑pin TSOPI, 63‑ball BGA and 67‑ball BGA options for flexible board-level integration.
- Operating Temperature Specified operating range down to −40 °C up to 85 °C.
- Qualification & Compliance JEDEC qualification and RoHS compliance indicated in product data.
Typical Applications
- Embedded Storage Non-volatile storage for firmware, boot code and system images where SLC endurance and retention are required.
- Industrial Controllers Durable code and data storage for machine control, PLCs and industrial automation operating across −40 °C to 85 °C.
- Data Logging High-reliability event and sensor data recording in instrumentation and monitoring systems.
- Firmware and Boot Media Persistent storage for boot loaders, secure firmware blocks and device configuration with OTP and block-lock capabilities.
Unique Advantages
- SLC Endurance: 100,000 program/erase cycles provide extended device lifetime for frequent-write applications.
- Long Data Retention: Uncycled data retention specified at 10 years at 85 °C supports long-term storage requirements.
- ONFI Compliance: Standard ONFI 1.0 command and interface support simplifies integration with existing NAND controllers.
- Flexible Packaging: Available in TSOPI and multiple BGA packages to match PCB space and thermal requirements.
- Built-in Data Management: Internal ECC control, block locking and OTP modes allow firmware-level control of data integrity and protection.
- Low-Voltage Operation: 1.8 V supply operation reduces system power domain complexity for low-voltage designs.
Why Choose F59D4G81XB-IP(2X)?
The F59D4G81XB (2X) balances SLC endurance, long-term data retention and ONFI-compliant parallel interface in a compact, surface-mount package set. Its combination of program/erase endurance, internal ECC options and advanced command set makes it well suited to industrial embedded designs that require reliable non-volatile storage across a wide temperature range.
Choose this device when your design demands durable, low-voltage NAND storage with multiple package options and JEDEC-level qualification for streamlined integration and long-term field reliability.
Request a quote or submit an inquiry to receive pricing, lead-time and ordering information for the F59D4G81XB-IP(2X).
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