F59D4G81XB-45TIG2X
| Part Description |
SLC NAND Flash, 4Gbit, 1.8V, Industrial |
|---|---|
| Quantity | 420 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | TSOPI-48 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 4 Gbit | Access Time | 25 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 1.7V ~ 1.95V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 200 µs | Packaging | 48-TSOPI | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 512M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59D4G81XB-45TIG2X – SLC NAND Flash, 4Gbit, 1.8V, Industrial
The F59D4G81XB-45TIG2X is a 4 Gbit (512M × 8) single-level cell (SLC) NAND flash memory device designed for industrial applications. It implements an asynchronous parallel 8-bit interface and adheres to the ONFI 1.0 standard for straightforward integration with NAND controllers.
Engineered for reliability and long-term storage, the device supports wide operating voltage (1.7 V–1.95 V) and industrial temperature operation (−40 °C to 85 °C), making it suitable for embedded systems and industrial designs that require durable non-volatile memory with configurable error management and strong endurance.
Key Features
- Core / Memory Single-level cell (SLC) NAND organized as 4 Gbit (512M × 8) with a page size of 4,352 bytes (4,096 + 256) and block size of 64 pages.
- Performance Asynchronous I/O with an access time listed in specifications and read/program/erase timings documented: read page up to 170 μs (with on-die ECC enabled) or 30 μs (with ECC disabled), program page ~200 μs (typical) without on-die ECC and ~240 μs (typical) with on-die ECC, erase block ~2 ms (typical).
- Interface Parallel 8-bit I/O with ONFI 1.0 compliance; standard NAND control signals (CE#, CLE, ALE, WE#, RE#), R/B# for ready/busy, and WP# for device-wide write protection.
- Power Low-voltage operation with a supply range of 1.7 V to 1.95 V (nominal 1.8 V).
- Reliability & Endurance Rated for 100,000 program/erase cycles and JESD47G-compliant data retention; uncycled data retention specified as 10 years at 70 °C.
- System & Data Management 8-bit internal ECC (disabled by default, configurable via SET FEATURE), on-die ECC capability, permanent block locking (blocks 0–47), OTP mode, block lock features, read unique ID, programmable drive strength, and an operation status byte for software-based completion/status checks.
- Package & Grade Surface-mount TSOPI-48 package (48-pin, 12 mm × 20 mm body, 0.5 mm pitch) in an industrial-grade, JEDEC-qualified offering.
Typical Applications
- Industrial Systems Suitable for embedded industrial designs that require reliable NAND storage across −40 °C to 85 °C and JEDEC qualification.
- Embedded Non-volatile Storage Appropriate for firmware, configuration, and data storage where SLC endurance and long data retention are required.
- Secure/Protected Storage OTP mode, block lock, and Read Unique ID support persistent configuration storage and device identification use cases.
Unique Advantages
- High Endurance: 100,000 program/erase cycles provide a durable SLC lifecycle for heavy write/erase applications.
- Industrial Temperature Rating: −40 °C to 85 °C operation ensures stable performance in demanding environments.
- Configurable ECC: 8-bit internal ECC can be enabled or disabled to match system-level error management strategies.
- ONFI 1.0 Compliance: Standardized NAND interface simplifies integration with controllers supporting ONFI-based devices.
- Low-Voltage Operation: 1.7 V–1.95 V supply range supports low-voltage system designs.
- Long-Term Data Retention: JESD47G-compliant retention and 10-year uncycled retention at 70 °C support archival and long-lived deployments.
Why Choose F59D4G81XB-45TIG2X?
The F59D4G81XB-45TIG2X delivers industrial-grade SLC NAND storage with a compact TSOPI-48 package, configurable on-die ECC, and specifications aimed at robust, long-life embedded deployments. Its combination of 4 Gbit capacity, high endurance, low-voltage operation, and JEDEC-aligned reliability makes it well suited for designers who need dependable non-volatile memory for industrial and embedded systems.
Choose this device when you require scalable NAND storage that supports standard parallel interfaces, flexible error management, block-level protection features, and operation across a wide temperature range.
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Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A