F59D4G81XB-45TIG2X

4Gb NAND Flash Ind.
Part Description

SLC NAND Flash, 4Gbit, 1.8V, Industrial

Quantity 420 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageTSOPI-48Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size4 GbitAccess Time25 nsGradeIndustrial
Clock FrequencyN/AVoltage1.7V ~ 1.95VMemory TypeNon-Volatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page200 µsPackaging48-TSOPI
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization512M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.71

Overview of F59D4G81XB-45TIG2X – SLC NAND Flash, 4Gbit, 1.8V, Industrial

The F59D4G81XB-45TIG2X is a 4 Gbit (512M × 8) single-level cell (SLC) NAND flash memory device designed for industrial applications. It implements an asynchronous parallel 8-bit interface and adheres to the ONFI 1.0 standard for straightforward integration with NAND controllers.

Engineered for reliability and long-term storage, the device supports wide operating voltage (1.7 V–1.95 V) and industrial temperature operation (−40 °C to 85 °C), making it suitable for embedded systems and industrial designs that require durable non-volatile memory with configurable error management and strong endurance.

Key Features

  • Core / Memory Single-level cell (SLC) NAND organized as 4 Gbit (512M × 8) with a page size of 4,352 bytes (4,096 + 256) and block size of 64 pages.
  • Performance Asynchronous I/O with an access time listed in specifications and read/program/erase timings documented: read page up to 170 μs (with on-die ECC enabled) or 30 μs (with ECC disabled), program page ~200 μs (typical) without on-die ECC and ~240 μs (typical) with on-die ECC, erase block ~2 ms (typical).
  • Interface Parallel 8-bit I/O with ONFI 1.0 compliance; standard NAND control signals (CE#, CLE, ALE, WE#, RE#), R/B# for ready/busy, and WP# for device-wide write protection.
  • Power Low-voltage operation with a supply range of 1.7 V to 1.95 V (nominal 1.8 V).
  • Reliability & Endurance Rated for 100,000 program/erase cycles and JESD47G-compliant data retention; uncycled data retention specified as 10 years at 70 °C.
  • System & Data Management 8-bit internal ECC (disabled by default, configurable via SET FEATURE), on-die ECC capability, permanent block locking (blocks 0–47), OTP mode, block lock features, read unique ID, programmable drive strength, and an operation status byte for software-based completion/status checks.
  • Package & Grade Surface-mount TSOPI-48 package (48-pin, 12 mm × 20 mm body, 0.5 mm pitch) in an industrial-grade, JEDEC-qualified offering.

Typical Applications

  • Industrial Systems Suitable for embedded industrial designs that require reliable NAND storage across −40 °C to 85 °C and JEDEC qualification.
  • Embedded Non-volatile Storage Appropriate for firmware, configuration, and data storage where SLC endurance and long data retention are required.
  • Secure/Protected Storage OTP mode, block lock, and Read Unique ID support persistent configuration storage and device identification use cases.

Unique Advantages

  • High Endurance: 100,000 program/erase cycles provide a durable SLC lifecycle for heavy write/erase applications.
  • Industrial Temperature Rating: −40 °C to 85 °C operation ensures stable performance in demanding environments.
  • Configurable ECC: 8-bit internal ECC can be enabled or disabled to match system-level error management strategies.
  • ONFI 1.0 Compliance: Standardized NAND interface simplifies integration with controllers supporting ONFI-based devices.
  • Low-Voltage Operation: 1.7 V–1.95 V supply range supports low-voltage system designs.
  • Long-Term Data Retention: JESD47G-compliant retention and 10-year uncycled retention at 70 °C support archival and long-lived deployments.

Why Choose F59D4G81XB-45TIG2X?

The F59D4G81XB-45TIG2X delivers industrial-grade SLC NAND storage with a compact TSOPI-48 package, configurable on-die ECC, and specifications aimed at robust, long-life embedded deployments. Its combination of 4 Gbit capacity, high endurance, low-voltage operation, and JEDEC-aligned reliability makes it well suited for designers who need dependable non-volatile memory for industrial and embedded systems.

Choose this device when you require scalable NAND storage that supports standard parallel interfaces, flexible error management, block-level protection features, and operation across a wide temperature range.

Request a quote or submit an inquiry to receive pricing and availability information for the F59D4G81XB-45TIG2X.

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