F59D4G81KA-45BG2R
| Part Description |
SLC NAND Flash, 4Gbit, 1.8V, x8, 63-ball BGA |
|---|---|
| Quantity | 1,053 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | BGA-63 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 4 Gbit | Access Time | 20 ns | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 1.7V ~ 1.95V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C – 70°C | Write Cycle Time Word Page | 400 µs | Packaging | 63-BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 512M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59D4G81KA-45BG2R – SLC NAND Flash, 4Gbit, 1.8V, x8, 63-ball BGA
The F59D4G81KA-45BG2R is a 4.295 Gbit SLC NAND flash device organized as 512M × 8. It implements 1-bit-per-cell NAND architecture with a parallel x8 DQ interface and a 1.8 V supply (1.7 V–1.95 V) for compact, low-voltage non‑volatile storage.
Designed for high-density data storage, this device targets solid-state file storage, image and voice recording, and other embedded systems requiring reliable, high-endurance NAND memory. On-die features such as automatic program/erase, cache operations and ECC requirements simplify system integration and data integrity management.
Key Features
- Memory Organization — 4.295 Gbit total capacity arranged as 512M × 8 with a page size of (4K + 256) bytes and block size of 64 pages ((256K + 16K) bytes).
- Technology & Endurance — Single-Level Cell (SLC) NAND flash with endurance rated at 60K program/erase cycles and 10‑year uncycled data retention at 55°C.
- Performance — Fast access characteristics including an access time of 20 ns, a read cycle of 45 ns, and random read up to 25 µs (max.).
- Program & Erase Timing — Typical page program time 400 µs (700 µs max); block erase time typ. 3.5 ms (10 ms max).
- Interface & Command Set — Parallel command/address/data multiplexed DQ port (x8), supporting cache program/read, copy-back, EDO mode and automatic page 0 read at power-up options.
- Data Protection & ECC — Hardware data protection features, program/erase lockout during power transitions, and an ECC requirement of 8 bit per 512 bytes to support system-level data integrity.
- Power & Packaging — Low-voltage operation (VCC 1.8 V, range 1.7 V–1.95 V). Supplied in a 63-ball BGA surface-mount package (BGA-63), commercial grade with operating temperature 0°C to 70°C.
- System Integration — Single-plane device with 2048 blocks per die, automatic program/erase operation, boot-from-NAND support and automatic memory download to facilitate embedded system boot and firmware storage.
- Standards & Reliability — Built on CMOS floating-gate technology and compliant to JESD47K specifications for reliability characterization.
Typical Applications
- Solid-State File Storage — High-density, non-volatile storage for embedded file systems and removable storage implementations.
- Digital Imaging — Image file memory for still cameras and imaging modules where sustained page/program performance and endurance are required.
- Voice & Media Recorders — On-device storage for voice recording and media capture applications benefiting from robust program/erase cycles and data retention.
- Embedded Boot & Firmware Storage — Boot-from-NAND and automatic page 0 read at power-up options enable firmware and system boot storage in compact embedded designs.
Unique Advantages
- High Endurance SLC Technology: 1-bit-per-cell SLC architecture with 60K P/E cycles supports long-term write-intensive applications.
- Low-Voltage Operation: 1.8 V supply range (1.7 V–1.95 V) reduces power domain complexity for modern embedded systems.
- Compact BGA Packaging: 63-ball BGA surface-mount package enables dense board layouts and reliable solder interconnect for space-constrained designs.
- Integrated Data Integrity: Hardware protection features plus a defined ECC requirement (8 bit/512 Byte) help maintain data reliability across the memory array.
- System-Friendly Features: Cache program/read, copy-back operation and automatic memory download simplify firmware updates and high-throughput programming.
- Quantified Timings: Documented program and erase timing (page program typ. 400 µs; block erase typ. 3.5 ms) support predictable system timing and performance budgeting.
Why Choose F59D4G81KA-45BG2R?
The F59D4G81KA-45BG2R is positioned for embedded designs that require high-density, durable non-volatile storage with well‑defined performance and reliability characteristics. Its SLC NAND architecture, documented program/erase timings and ECC guidance make it suitable for applications that demand predictable endurance and data retention.
With a low-voltage 1.8 V supply, 63-ball BGA packaging, and system-oriented features such as boot-from-NAND and cache operations, this device supports compact, serviceable designs where integration and long-term robustness are priorities.
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Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A