F59D4G81KA-45BG2R

4Gb NAND Flash
Part Description

SLC NAND Flash, 4Gbit, 1.8V, x8, 63-ball BGA

Quantity 1,053 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageBGA-63Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size4 GbitAccess Time20 nsGradeCommercial
Clock FrequencyN/AVoltage1.7V ~ 1.95VMemory TypeNon-Volatile
Operating Temperature0°C – 70°CWrite Cycle Time Word Page400 µsPackaging63-BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization512M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.00.71

Overview of F59D4G81KA-45BG2R – SLC NAND Flash, 4Gbit, 1.8V, x8, 63-ball BGA

The F59D4G81KA-45BG2R is a 4.295 Gbit SLC NAND flash device organized as 512M × 8. It implements 1-bit-per-cell NAND architecture with a parallel x8 DQ interface and a 1.8 V supply (1.7 V–1.95 V) for compact, low-voltage non‑volatile storage.

Designed for high-density data storage, this device targets solid-state file storage, image and voice recording, and other embedded systems requiring reliable, high-endurance NAND memory. On-die features such as automatic program/erase, cache operations and ECC requirements simplify system integration and data integrity management.

Key Features

  • Memory Organization — 4.295 Gbit total capacity arranged as 512M × 8 with a page size of (4K + 256) bytes and block size of 64 pages ((256K + 16K) bytes).
  • Technology & Endurance — Single-Level Cell (SLC) NAND flash with endurance rated at 60K program/erase cycles and 10‑year uncycled data retention at 55°C.
  • Performance — Fast access characteristics including an access time of 20 ns, a read cycle of 45 ns, and random read up to 25 µs (max.).
  • Program & Erase Timing — Typical page program time 400 µs (700 µs max); block erase time typ. 3.5 ms (10 ms max).
  • Interface & Command Set — Parallel command/address/data multiplexed DQ port (x8), supporting cache program/read, copy-back, EDO mode and automatic page 0 read at power-up options.
  • Data Protection & ECC — Hardware data protection features, program/erase lockout during power transitions, and an ECC requirement of 8 bit per 512 bytes to support system-level data integrity.
  • Power & Packaging — Low-voltage operation (VCC 1.8 V, range 1.7 V–1.95 V). Supplied in a 63-ball BGA surface-mount package (BGA-63), commercial grade with operating temperature 0°C to 70°C.
  • System Integration — Single-plane device with 2048 blocks per die, automatic program/erase operation, boot-from-NAND support and automatic memory download to facilitate embedded system boot and firmware storage.
  • Standards & Reliability — Built on CMOS floating-gate technology and compliant to JESD47K specifications for reliability characterization.

Typical Applications

  • Solid-State File Storage — High-density, non-volatile storage for embedded file systems and removable storage implementations.
  • Digital Imaging — Image file memory for still cameras and imaging modules where sustained page/program performance and endurance are required.
  • Voice & Media Recorders — On-device storage for voice recording and media capture applications benefiting from robust program/erase cycles and data retention.
  • Embedded Boot & Firmware Storage — Boot-from-NAND and automatic page 0 read at power-up options enable firmware and system boot storage in compact embedded designs.

Unique Advantages

  • High Endurance SLC Technology: 1-bit-per-cell SLC architecture with 60K P/E cycles supports long-term write-intensive applications.
  • Low-Voltage Operation: 1.8 V supply range (1.7 V–1.95 V) reduces power domain complexity for modern embedded systems.
  • Compact BGA Packaging: 63-ball BGA surface-mount package enables dense board layouts and reliable solder interconnect for space-constrained designs.
  • Integrated Data Integrity: Hardware protection features plus a defined ECC requirement (8 bit/512 Byte) help maintain data reliability across the memory array.
  • System-Friendly Features: Cache program/read, copy-back operation and automatic memory download simplify firmware updates and high-throughput programming.
  • Quantified Timings: Documented program and erase timing (page program typ. 400 µs; block erase typ. 3.5 ms) support predictable system timing and performance budgeting.

Why Choose F59D4G81KA-45BG2R?

The F59D4G81KA-45BG2R is positioned for embedded designs that require high-density, durable non-volatile storage with well‑defined performance and reliability characteristics. Its SLC NAND architecture, documented program/erase timings and ECC guidance make it suitable for applications that demand predictable endurance and data retention.

With a low-voltage 1.8 V supply, 63-ball BGA packaging, and system-oriented features such as boot-from-NAND and cache operations, this device supports compact, serviceable designs where integration and long-term robustness are priorities.

Request a quote or submit an inquiry to receive pricing, availability and lead-time information for the F59D4G81KA-45BG2R.

Request a Quote

















    No file selected



    Our team will respond within 24 hours.


    I agree to receive newsletters and promotional emails. I can unsubscribe at any time.

    Certifications and Membership
    NQA AS9100 CMYK ANAB
    NQA AS9100 ANAB Badge
    ESD2020 Badge
    ESD2020 Association Badge
    GIDEP Badge
    GIDEP Badge
    Suntsu ERAI MemberVerification
    Suntsu ERAI Member Verification
    Available Shipping Methods
    FedEx
    UPS
    DHL
    Accepted Payment Methods
    American Express
    American Express
    Discover
    Discover
    MasterCard
    MasterCard
    Visa
    Visa
    UnionPay
    UnionPay

    Date Founded: 1998


    Headquarters: Hsinchu Science Park, Hsinchu, Taiwan


    Employees: 400+


    Revenue: $377.8 Million


    Certifications and Memberships: N/A


    Featured Products
    Latest News
    keyboard_arrow_up