F59D2G81XA-45TIG2B

2Gb NAND Flash Ind.
Part Description

SLC NAND Flash, 2Gbit (256M x 8), 1.8V, x8, 45ns, 48‑pin TSOPI, Industrial

Quantity 671 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageTSOPI-48Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size2 GbitAccess Time25 nsGradeIndustrial
Clock FrequencyN/AVoltage1.7V ~ 1.95VMemory TypeNon-Volatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page200 µsPackaging48-TSOPI
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization256M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.71

Overview of F59D2G81XA-45TIG2B – SLC NAND Flash, 2Gbit (256M x 8), 1.8V, x8, 45ns, 48‑pin TSOPI, Industrial

The F59D2G81XA-45TIG2B is a 2 Gbit single-level cell (SLC) NAND Flash memory organized as 256M x 8, designed for industrial-grade embedded storage. It implements an asynchronous parallel I/O with an 8-bit multiplexed bus and supports ONFI 1.0 command protocol for standard NAND Flash operations.

Targeted at designs that require durable non-volatile storage across a wide temperature range, this device provides SLC endurance and JEDEC qualification, a low-voltage 1.8 V supply window (1.7 V–1.95 V), and a compact 48-pin TSOPI surface-mount package.

Key Features

  • Memory Organization — 2.147 Gbit capacity arranged as 256M × 8 with 2176-byte pages (2048 + 128 bytes), 64-page blocks (128K + 8K bytes) and 2 planes × 1024 blocks per plane, totaling 2048 blocks per device.
  • SLC NAND Technology — Single-level cell architecture with endurance rated to 100,000 program/erase cycles and uncycled data retention specified at 10 years.
  • Performance & Timing — Device offered in a 45 ns speed option; access time listed at 25 ns. Typical array performance: read page 30 µs, program page 200 µs (typical), erase block 2 ms (typical); asynchronous I/O with tRC/tWC noted at 30 ns.
  • Interface & Command Support — 8-bit parallel I/O with standard NAND control signals (CE#, CLE, ALE, WE#, RE#) and ONFI 1.0-compliant command set including advanced features such as program/read page cache modes, two‑plane commands, OTP mode, and read unique ID.
  • Power — Operates from a 1.8 V supply range (1.7 V to 1.95 V) suitable for low-voltage embedded systems.
  • Package & Mounting — Available in a 48-pin TSOPI surface-mount package (TSOPI-48) with a small footprint for space-constrained PCBs.
  • Industrial Grade & Qualification — Industrial operating temperature range from −40 °C to +85 °C and JEDEC qualification for robust field performance.
  • Device Management & Protection — Ready/Busy# (R/B#) and operation status byte for software and hardware detection of operation completion, plus WP# for device-level write protection.

Typical Applications

  • Industrial Control Systems — Non-volatile program and parameter storage that withstands −40 °C to +85 °C for factory automation and PLCs.
  • Embedded Firmware & Boot Storage — Reliable SLC endurance and data retention for firmware images and boot sequences in embedded devices.
  • Data Logging & Event Recording — High program/erase cycle endurance and page-level program/read performance for cyclic logging and event storage in industrial IoT nodes.

Unique Advantages

  • Long Endurance: 100,000 program/erase cycles offers predictable lifetime for write-intensive industrial applications.
  • Standard ONFI Interface: ONFI 1.0 compliance and an 8-bit parallel bus enable straightforward integration with existing NAND controllers and migration between densities.
  • Low-Voltage Operation: 1.8 V supply (1.7 V–1.95 V) reduces system power domain complexity in low-voltage designs.
  • Industrial Temperature Range: Specified −40 °C to +85 °C to meet the thermal demands of harsh environments and extended-temperature deployments.
  • Compact Surface-Mount Package: TSOPI-48 package supports PCB space optimization while providing necessary control and I/O signals for asynchronous NAND operation.
  • Robust Data Management: Built-in status reporting, R/B# signaling and write-protect support simplify firmware control and improve system reliability.

Why Choose F59D2G81XA-45TIG2B?

The F59D2G81XA-45TIG2B positions itself as a reliable, industrial-grade SLC NAND solution for embedded systems that demand endurance, predictable retention, and standard NAND interfacing. With detailed timing characteristics, typical program/read/erase latencies, and JEDEC qualification, it is suitable for designs where long-term data integrity and temperature resilience matter.

This device is well suited for engineers specifying storage for industrial controllers, firmware/boot storage, and logging applications that require a compact TSOPI package, low-voltage operation, and explicit performance and endurance metrics supported by the manufacturer.

Request a quote or contact sales to discuss availability, volume pricing, and technical support for integrating the F59D2G81XA-45TIG2B into your next design.

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