F59D2G81XA-45TIG2B
| Part Description |
SLC NAND Flash, 2Gbit (256M x 8), 1.8V, x8, 45ns, 48‑pin TSOPI, Industrial |
|---|---|
| Quantity | 671 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | TSOPI-48 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 2 Gbit | Access Time | 25 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 1.7V ~ 1.95V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 200 µs | Packaging | 48-TSOPI | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 256M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59D2G81XA-45TIG2B – SLC NAND Flash, 2Gbit (256M x 8), 1.8V, x8, 45ns, 48‑pin TSOPI, Industrial
The F59D2G81XA-45TIG2B is a 2 Gbit single-level cell (SLC) NAND Flash memory organized as 256M x 8, designed for industrial-grade embedded storage. It implements an asynchronous parallel I/O with an 8-bit multiplexed bus and supports ONFI 1.0 command protocol for standard NAND Flash operations.
Targeted at designs that require durable non-volatile storage across a wide temperature range, this device provides SLC endurance and JEDEC qualification, a low-voltage 1.8 V supply window (1.7 V–1.95 V), and a compact 48-pin TSOPI surface-mount package.
Key Features
- Memory Organization — 2.147 Gbit capacity arranged as 256M × 8 with 2176-byte pages (2048 + 128 bytes), 64-page blocks (128K + 8K bytes) and 2 planes × 1024 blocks per plane, totaling 2048 blocks per device.
- SLC NAND Technology — Single-level cell architecture with endurance rated to 100,000 program/erase cycles and uncycled data retention specified at 10 years.
- Performance & Timing — Device offered in a 45 ns speed option; access time listed at 25 ns. Typical array performance: read page 30 µs, program page 200 µs (typical), erase block 2 ms (typical); asynchronous I/O with tRC/tWC noted at 30 ns.
- Interface & Command Support — 8-bit parallel I/O with standard NAND control signals (CE#, CLE, ALE, WE#, RE#) and ONFI 1.0-compliant command set including advanced features such as program/read page cache modes, two‑plane commands, OTP mode, and read unique ID.
- Power — Operates from a 1.8 V supply range (1.7 V to 1.95 V) suitable for low-voltage embedded systems.
- Package & Mounting — Available in a 48-pin TSOPI surface-mount package (TSOPI-48) with a small footprint for space-constrained PCBs.
- Industrial Grade & Qualification — Industrial operating temperature range from −40 °C to +85 °C and JEDEC qualification for robust field performance.
- Device Management & Protection — Ready/Busy# (R/B#) and operation status byte for software and hardware detection of operation completion, plus WP# for device-level write protection.
Typical Applications
- Industrial Control Systems — Non-volatile program and parameter storage that withstands −40 °C to +85 °C for factory automation and PLCs.
- Embedded Firmware & Boot Storage — Reliable SLC endurance and data retention for firmware images and boot sequences in embedded devices.
- Data Logging & Event Recording — High program/erase cycle endurance and page-level program/read performance for cyclic logging and event storage in industrial IoT nodes.
Unique Advantages
- Long Endurance: 100,000 program/erase cycles offers predictable lifetime for write-intensive industrial applications.
- Standard ONFI Interface: ONFI 1.0 compliance and an 8-bit parallel bus enable straightforward integration with existing NAND controllers and migration between densities.
- Low-Voltage Operation: 1.8 V supply (1.7 V–1.95 V) reduces system power domain complexity in low-voltage designs.
- Industrial Temperature Range: Specified −40 °C to +85 °C to meet the thermal demands of harsh environments and extended-temperature deployments.
- Compact Surface-Mount Package: TSOPI-48 package supports PCB space optimization while providing necessary control and I/O signals for asynchronous NAND operation.
- Robust Data Management: Built-in status reporting, R/B# signaling and write-protect support simplify firmware control and improve system reliability.
Why Choose F59D2G81XA-45TIG2B?
The F59D2G81XA-45TIG2B positions itself as a reliable, industrial-grade SLC NAND solution for embedded systems that demand endurance, predictable retention, and standard NAND interfacing. With detailed timing characteristics, typical program/read/erase latencies, and JEDEC qualification, it is suitable for designs where long-term data integrity and temperature resilience matter.
This device is well suited for engineers specifying storage for industrial controllers, firmware/boot storage, and logging applications that require a compact TSOPI package, low-voltage operation, and explicit performance and endurance metrics supported by the manufacturer.
Request a quote or contact sales to discuss availability, volume pricing, and technical support for integrating the F59D2G81XA-45TIG2B into your next design.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A