F59D2G81KA-45TIG2N

2Gb NAND Flash Ind.
Part Description

SLC NAND Flash, 2Gbit, 1.8V, x8, 45ns, 48-pin TSOPI, Industrial

Quantity 1,251 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageTSOPI-48Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size2 GbitAccess Time25 nsGradeIndustrial
Clock FrequencyN/AVoltage1.7V ~ 1.95VMemory TypeNon-Volatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page400 µsPackaging48-TSOPI
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization256M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.71

Overview of F59D2G81KA-45TIG2N – SLC NAND Flash, 2Gbit, 1.8V, x8, 45ns, 48-pin TSOPI, Industrial

The F59D2G81KA-45TIG2N is a 2 Gbit SLC NAND Flash memory organized as 256M × 8 with a 1.8V supply window (1.7 V to 1.95 V). Designed for parallel x8 interfacing in a 48-pin TSOPI surface-mount package, it targets industrial embedded storage applications that require robust non-volatile data retention and field-proven NAND functionality.

With native SLC architecture, on-die features for program/erase management and read/write caching, and JEDEC qualification, this device is suited for systems such as solid-state file storage, voice/data recorders and image memory in embedded product designs operating from −40 °C to 85 °C.

Key Features

  • Memory Core 2.147 Gbit capacity organized as 256M × 8 with 1-bit-per-cell (SLC) architecture and 2048 blocks per die for deterministic block management.
  • Page & Block Architecture 2176-byte static registers and page size of (2K + 128) bytes; block size is 64 pages = (128K + 8K) bytes enabling block-erase granularity.
  • Performance Read cycle 45 ns and listed access time of 25 ns; random read latency up to 25 µs. Page program time typ. 400 µs (max 700 µs); block erase typ. 3.5 ms (max 10 ms).
  • Interface Parallel command/address/data multiplexed DQ port (x8) with support for EDO mode, cache read/program and copy-back operations for flexible data transfer strategies.
  • Reliability & Data Integrity Endurance rated to 50K program/erase cycles, ECC requirement of 8 bits per 512 bytes, and uncycled data retention specified at 10 years (at 55 °C).
  • Power Low-voltage operation with VCC = 1.8 V (operating range 1.7 V to 1.95 V) for power-sensitive embedded systems.
  • System Features Hardware data protection, program/erase lockout during power transitions, automatic program/erase execution, automatic page 0 read at power-up option, and boot-from-NAND support.
  • Package & Temperature Surface-mount TSOPI-48 package (12 mm × 20 mm, 0.5 mm pitch) and industrial operating range from −40 °C to 85 °C. RoHS compliant and JEDEC qualified.

Typical Applications

  • Solid-State File Storage — High-density non-volatile storage for embedded devices requiring predictable block erase and program behavior.
  • Voice and Data Recorders — Reliable SLC endurance and data retention for continuous or intermittent audio and telemetry logging.
  • Image File Memory for Cameras — Page-oriented read/program operations and cache modes support large-file capture and buffering in imaging systems.
  • Industrial Embedded Systems — Industrial temperature rating and JEDEC qualification make it suitable for factory automation and instrumentation storage.

Unique Advantages

  • SLC Endurance and Retention: 1-bit-per-cell architecture with 50K P/E cycles and 10-year uncycled retention at 55 °C for long-term data reliability.
  • Predictable Program/Erase Timing: Typical page program time 400 µs and typical block erase 3.5 ms provide deterministic timing characteristics for firmware-managed storage.
  • Low-Voltage Operation: 1.7 V to 1.95 V supply range reduces power budget in low-voltage system designs.
  • Embedded-System Ready: Boot-from-NAND option, automatic page 0 read at power-up and hardware protection features simplify system initialization and safeguard data during power events.
  • Flexible Data Transfer Modes: Static 2176-byte registers, cache program/read and copy-back operations enable efficient large-page management and fast data movement.
  • Industrial-Grade Packaging: TSOPI-48 surface-mount package and −40 °C to 85 °C operating range accommodate space-constrained boards in harsh environments.

Why Choose F59D2G81KA-45TIG2N?

The F59D2G81KA-45TIG2N combines SLC NAND reliability with industrial-grade electrical and thermal specifications to address embedded storage needs where endurance, retention and predictable program/erase behavior matter. Its parallel x8 interface, on-die register architecture and system-level features such as boot support and hardware protection make integration into firmware-controlled storage subsystems straightforward.

This part is well suited for engineers designing industrial, imaging and data-logging products that require robust non-volatile memory with clear performance and endurance specifications, JEDEC qualification and RoHS compliance for long-term field operation.

Request a quote or submit an inquiry to obtain pricing, lead times and ordering information for the F59D2G81KA-45TIG2N.

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