F59D2G81KA-45TIG2N
| Part Description |
SLC NAND Flash, 2Gbit, 1.8V, x8, 45ns, 48-pin TSOPI, Industrial |
|---|---|
| Quantity | 1,251 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | TSOPI-48 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 2 Gbit | Access Time | 25 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 1.7V ~ 1.95V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 400 µs | Packaging | 48-TSOPI | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 256M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59D2G81KA-45TIG2N – SLC NAND Flash, 2Gbit, 1.8V, x8, 45ns, 48-pin TSOPI, Industrial
The F59D2G81KA-45TIG2N is a 2 Gbit SLC NAND Flash memory organized as 256M × 8 with a 1.8V supply window (1.7 V to 1.95 V). Designed for parallel x8 interfacing in a 48-pin TSOPI surface-mount package, it targets industrial embedded storage applications that require robust non-volatile data retention and field-proven NAND functionality.
With native SLC architecture, on-die features for program/erase management and read/write caching, and JEDEC qualification, this device is suited for systems such as solid-state file storage, voice/data recorders and image memory in embedded product designs operating from −40 °C to 85 °C.
Key Features
- Memory Core 2.147 Gbit capacity organized as 256M × 8 with 1-bit-per-cell (SLC) architecture and 2048 blocks per die for deterministic block management.
- Page & Block Architecture 2176-byte static registers and page size of (2K + 128) bytes; block size is 64 pages = (128K + 8K) bytes enabling block-erase granularity.
- Performance Read cycle 45 ns and listed access time of 25 ns; random read latency up to 25 µs. Page program time typ. 400 µs (max 700 µs); block erase typ. 3.5 ms (max 10 ms).
- Interface Parallel command/address/data multiplexed DQ port (x8) with support for EDO mode, cache read/program and copy-back operations for flexible data transfer strategies.
- Reliability & Data Integrity Endurance rated to 50K program/erase cycles, ECC requirement of 8 bits per 512 bytes, and uncycled data retention specified at 10 years (at 55 °C).
- Power Low-voltage operation with VCC = 1.8 V (operating range 1.7 V to 1.95 V) for power-sensitive embedded systems.
- System Features Hardware data protection, program/erase lockout during power transitions, automatic program/erase execution, automatic page 0 read at power-up option, and boot-from-NAND support.
- Package & Temperature Surface-mount TSOPI-48 package (12 mm × 20 mm, 0.5 mm pitch) and industrial operating range from −40 °C to 85 °C. RoHS compliant and JEDEC qualified.
Typical Applications
- Solid-State File Storage — High-density non-volatile storage for embedded devices requiring predictable block erase and program behavior.
- Voice and Data Recorders — Reliable SLC endurance and data retention for continuous or intermittent audio and telemetry logging.
- Image File Memory for Cameras — Page-oriented read/program operations and cache modes support large-file capture and buffering in imaging systems.
- Industrial Embedded Systems — Industrial temperature rating and JEDEC qualification make it suitable for factory automation and instrumentation storage.
Unique Advantages
- SLC Endurance and Retention: 1-bit-per-cell architecture with 50K P/E cycles and 10-year uncycled retention at 55 °C for long-term data reliability.
- Predictable Program/Erase Timing: Typical page program time 400 µs and typical block erase 3.5 ms provide deterministic timing characteristics for firmware-managed storage.
- Low-Voltage Operation: 1.7 V to 1.95 V supply range reduces power budget in low-voltage system designs.
- Embedded-System Ready: Boot-from-NAND option, automatic page 0 read at power-up and hardware protection features simplify system initialization and safeguard data during power events.
- Flexible Data Transfer Modes: Static 2176-byte registers, cache program/read and copy-back operations enable efficient large-page management and fast data movement.
- Industrial-Grade Packaging: TSOPI-48 surface-mount package and −40 °C to 85 °C operating range accommodate space-constrained boards in harsh environments.
Why Choose F59D2G81KA-45TIG2N?
The F59D2G81KA-45TIG2N combines SLC NAND reliability with industrial-grade electrical and thermal specifications to address embedded storage needs where endurance, retention and predictable program/erase behavior matter. Its parallel x8 interface, on-die register architecture and system-level features such as boot support and hardware protection make integration into firmware-controlled storage subsystems straightforward.
This part is well suited for engineers designing industrial, imaging and data-logging products that require robust non-volatile memory with clear performance and endurance specifications, JEDEC qualification and RoHS compliance for long-term field operation.
Request a quote or submit an inquiry to obtain pricing, lead times and ordering information for the F59D2G81KA-45TIG2N.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A