F59D2G81KA-45BIAG2N

2Gb NAND Flash Auto.
Part Description

SLC NAND Flash, 2Gbit (256M × 8), 1.8V, 45ns, 63-ball BGA, Automotive

Quantity 1,323 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageBGA-63Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size2 GbitAccess Time25 nsGradeAutomotive
Clock FrequencyN/AVoltage1.7V ~ 1.95VMemory TypeNon-Volatile
Operating Temperature-40°C – 105°CWrite Cycle Time Word Page400 µsPackaging63-BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization256M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationAEC-Q100ECCNEAR99HTS Code8542.32.00.71

Overview of F59D2G81KA-45BIAG2N – SLC NAND Flash, 2Gbit (256M × 8), 1.8V, 45ns, 63-ball BGA, Automotive

The F59D2G81KA-45BIAG2N from ESMT is a 2.147 Gbit single-level cell (SLC) NAND flash memory organized as 256M × 8 with a parallel x8 interface and 1.8V supply range (1.7 V ~ 1.95 V). It is designed for data storage applications requiring deterministic read/write behavior and automotive-grade reliability, with AEC-Q100 qualification and an extended operating temperature range.

Its architecture supports large page and block operations, on-chip data registers, and hardware protections that simplify implementation in embedded storage, imaging, and file-based data-logging systems.

Key Features

  • Memory Architecture — 2.147 Gbit SLC NAND organized as 256M × 8 with page size (2K + 128) bytes, data register (2K + 128) bytes, and block size of 64 pages (128K + 8K bytes).
  • Performance — Read cycle time of 45 ns, access time 25 ns, and random read up to 25 µs (max), enabling fast read operations for embedded storage tasks.
  • Program & Erase Timing — Typical page program time 400 µs (700 µs max) and block erase time 3.5 ms (10 ms max), supporting efficient write and maintenance cycles.
  • Endurance & Retention — Rated for 50K program/erase cycles with uncycled data retention of 10 years at 55°C, suitable for long-term data storage requirements.
  • Power & Interface — Low-voltage operation at 1.8V (1.7 V ~ 1.95 V) with a command/address/data multiplexed DQ port and parallel x8 interface for simple integration.
  • Reliability & Protection — Hardware data protection features including program/erase lockout during power transitions; ECC requirement specified as 8-bit/512-byte for data integrity.
  • Automotive Grade & Temperature Range — AEC-Q100 qualified and specified for operation from −40 °C to 105 °C, in a 63-ball BGA surface-mount package (9 mm × 11 mm body, 0.8 mm ball pitch).
  • On-Chip Functionality — Supports cache program/read, copy-back, two-plane operation, automatic page 0 read at power-up option, boot-from-NAND support and automatic memory download for flexible boot and update flows.

Typical Applications

  • Solid-state storage — Used as embedded non-volatile storage for file systems and data logging where durable SLC endurance and long retention are required.
  • Imaging modules — Suitable for image file memory in still cameras and similar devices that benefit from large page/block sizes and fast read cycles.
  • Voice and media recorders — Provides robust program/erase cycling and reliable retention for voice recording and media storage applications.
  • Embedded boot and firmware storage — Supports boot-from-NAND and automatic memory download options for system boot and firmware update workflows.

Unique Advantages

  • Deterministic read performance: 45 ns read cycle and 25 ns access time support responsive read operations in embedded systems.
  • High endurance and retention: 50K P/E cycles and 10-year retention at 55°C provide long-term data reliability for lifecycle-critical applications.
  • Automotive-grade qualification: AEC-Q100 qualification and −40 °C to 105 °C rating enable deployment in harsh automotive and industrial environments.
  • Low-voltage operation: 1.8V nominal supply (1.7 V ~ 1.95 V) reduces system power domain complexity and aligns with common low-voltage designs.
  • Large page/block architecture: (2K + 128) byte pages and 64-page blocks optimize throughput and reduce overhead for large file and media writes.
  • Built-in data protection: Hardware lockout during power transitions and specified ECC requirements support data integrity during critical operations.

Why Choose F59D2G81KA-45BIAG2N?

The F59D2G81KA-45BIAG2N balances fast read performance, robust program/erase endurance, and automotive-grade reliability in a compact 63-ball BGA package. Its SLC NAND architecture, detailed timing characteristics, and on-chip features (cache operations, copy-back, two-plane operation) make it well suited for embedded storage, imaging, and boot/firmware applications that demand predictable behavior over long lifetimes.

Designers and procurement teams will find this device appropriate for systems that require AEC-Q100 qualified memory, extended temperature operation, and clear electrical and timing specifications for integration into automotive and industrial platforms.

Request a quote or submit an inquiry to receive pricing, availability, and lead-time information for the F59D2G81KA-45BIAG2N.

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