F59D2G81KA-45BG2N

The F59D2G81KA-45BG2N is a 2 Gbit (256M x 8) single-level-cell (SLC) NAND flash memory device optimized for high-density non-volatile storage. It operates from a 1.8 V supply (1.7 V to 1.95 V) and is offered in a compact 63-ball BGA package for space-efficient surface-mount integration.

Designed for embedded storage applications, the device provides block-level erase and automatic program/erase operations, on-chip data registers, and system-friendly features such as boot-from-NAND support and cache read/program capabilities.

Key Features

• Memory Core & Organization — 2.147 Gbit capacity organized as 256M × 8 with page size (2K + 128) bytes and block size of 64 pages (128K + 8K bytes).
• SLC NAND Technology — 1 bit per cell architecture delivering endurance and data retention characteristics suitable for demanding non-volatile storage usage.
• Performance — Read cycle timing of 45 ns and device access characteristics including random read and page read operations. Typical page program time is 400 µs (typ.) with maximum program and erase timings specified.
• Program / Erase & Reliability — Endurance rated to 50K program/erase cycles and uncycled data retention of 10 years at 55 °C; ECC requirement specified as 8-bit per 512 bytes.
• Power — Single 1.8 V supply operation with allowable VCC range from 1.7 V to 1.95 V for low-voltage system compatibility.
• Interface & Operation — Parallel NAND interface with command/address/data multiplexed on the DQ port, cache program/read, copy-back, two-plane operation and EDO mode supported.
• Package & Temperature — 63-ball BGA (9 mm × 11 mm body, 0.8 mm ball pitch) surface-mount package; commercial operating temperature 0 °C to 70 °C.

Typical Applications

• Solid-state file storage — High-density non-volatile storage for consumer and embedded devices requiring automated program and erase operations.
• Voice recording systems — Reliable SLC endurance and retention for audio capture and long-term storage of recorded content.
• Image file memory for still cameras — Large page/block organization and cache programming support for efficient image write and storage.
• System boot and firmware storage — Boot-from-NAND support and automatic memory download options for firmware and boot media implementations.

Unique Advantages

• SLC endurance and retention — 50K program/erase cycles and 10-year data retention at 55 °C provide a durable storage foundation for embedded designs.
• High-density organization — 256M × 8 arrangement with 2,176-byte data registers and large block sizes reduces BOM complexity for high-capacity storage requirements.
• System-level features — Built-in cache read/program, copy-back, two-plane operation and automatic page 0 read at power-up streamline system integration and performance tuning.
• Low-voltage operation — 1.8 V supply (1.7 V–1.95 V) supports modern low-voltage platforms and simplifies power-rail design.
• Compact BGA packaging — 63-ball BGA (9 mm × 11 mm, 0.8 mm pitch) enables a small PCB footprint while providing robust surface-mount mounting.

Why Choose F59D2G81KA-45BG2N?

The F59D2G81KA-45BG2N combines SLC NAND reliability with a high-density 2 Gbit organization and a compact 63-ball BGA package to meet embedded storage requirements where endurance, retention, and board-space efficiency matter. Its documented timing characteristics, page/block architecture and system-oriented features such as boot-from-NAND and cache operations make it suitable for designs requiring predictable program/erase behavior and controlled ECC strategies.

This device is well suited for engineers and procurement teams building consumer and embedded products that demand robust non-volatile storage with clear electrical and timing specifications, available package options, and a complete datasheet for design integration.

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