F59D2G81KA-45BIG2N

The F59D2G81KA-45BIG2N from ESMT is a 2.147 Gbit single-level cell (SLC) NAND flash device organized as 256M × 8. It provides industry-grade non-volatile storage with parallel I/O, JEDEC qualification and a 1.8 V supply window (1.7 V to 1.95 V).

Designed for embedded storage applications, the device supports large-page operations, automatic program/erase functions and system-level features such as boot-from-NAND and automatic memory download — making it suitable for solid-state file storage, voice and image memory, and other high-density non-volatile memory requirements.

Key Features

• Memory Architecture — 2.147 Gbit organized as 256M × 8 with 2176-byte page and data registers (page = 2K + 128 bytes) for block-based program and erase operations.
• Performance — Read cycle time of 45 ns and random read latency up to 25 µs (maximum); typical page program time of 400 µs (700 µs max) and block erase time typical 3.5 ms (10 ms max).
• Endurance & Retention — SLC cell technology with 50K program/erase cycle endurance and 10 years data retention at 55 °C.
• Reliability & ECC — ECC requirement of 8-bit per 512 bytes; hardware data protection and program/erase lockout during power transitions.
• Advanced NAND Features — Supports cache program/read, copy-back, two-plane operations, EDO mode, automatic page-0 read at power-up and limited partial program cycles (NOP = 4).
• Power & Supply — Single 1.8 V nominal supply with operating range 1.7 V to 1.95 V for low-voltage system integration.
• Package & Mounting — 63-ball BGA (BGA-63) surface-mount package with 9 mm × 11 mm body and 0.8 mm ball pitch.
• Industrial Grade — JEDEC-qualified device with operating temperature range −40 °C to 85 °C and RoHS compliance.

Typical Applications

• Solid-state storage — High-density file storage for embedded systems where reliable, block-based NAND storage is required.
• Imaging devices — Image file memory for still cameras and imaging modules benefiting from large page sizes and fast program/read operations.
• Voice and audio recording — Non-volatile storage for voice loggers and audio recorders that require robust retention and endurance.
• Industrial embedded systems — Industrial controllers and instrumentation that demand JEDEC-qualified NAND with extended temperature range and durable P/E cycles.

Unique Advantages

• SLC endurance and retention: 50K program/erase cycles and 10 years retention at 55 °C provide predictable life for long-term data storage requirements.
• Large-page architecture: 2176-byte pages and 64-page blocks simplify high-throughput program and erase workflows for file and media storage.
• Low-voltage operation: 1.7 V–1.95 V supply range enables integration with 1.8 V system rails and helps reduce overall platform power.
• System-level features: Built-in support for boot-from-NAND, automatic page-0 read, cache operations and two-plane programming aids faster system boot and efficient data handling.
• Industrial qualification: JEDEC qualification and −40 °C to 85 °C operating range address reliability needs for industrial-grade deployments.
• Compact BGA package: 63-ball BGA (9 mm × 11 mm) delivers a small footprint for dense board layouts while supporting surface-mount assembly.

Why Choose F59D2G81KA-45BIG2N?

ESMT’s F59D2G81KA-45BIG2N combines SLC NAND technology, a large-page memory architecture and industrial temperature tolerance to deliver dependable non-volatile storage for embedded and industrial applications. Its mix of endurance, retention and system-oriented features makes it well suited for designs that require robust, long-lived data storage with efficient program/read behaviors.

This device is ideal for engineers specifying NAND for imaging, audio, file storage and other embedded systems where JEDEC qualification, low-voltage operation and a compact BGA package are priorities.

Request a quote or submit an inquiry to purchase the F59D2G81KA-45BIG2N and evaluate how its SLC NAND characteristics meet your application's storage and reliability requirements.