F59D2G81KA-45TIAG2N

2Gb NAND Flash Auto.
Part Description

SLC NAND Flash, 2Gbit, 1.8V, x8, 45ns, 48‑pin TSOPI, Automotive

Quantity 380 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageTSOPI-48Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size2 GbitAccess Time25 nsGradeAutomotive
Clock FrequencyN/AVoltage1.7V ~ 1.95VMemory TypeNon-Volatile
Operating Temperature-40°C – 105°CWrite Cycle Time Word Page400 µsPackaging48-TSOPI
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization256M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationAEC-Q100ECCNEAR99HTS Code8542.32.00.71

Overview of F59D2G81KA-45TIAG2N – SLC NAND Flash, 2Gbit, 1.8V, x8, 45ns, 48‑pin TSOPI, Automotive

The F59D2G81KA-45TIAG2N is a 2.147 Gbit SLC NAND Flash device organized as 256M × 8, designed for high-reliability non‑volatile storage. It implements a parallel x8 I/O interface and operates from a 1.8 V supply (1.7 V to 1.95 V), delivering a compact, automotive‑grade memory solution.

Targeted for embedded storage use, the device provides block erase and automatic program/erase operations with features that support booting, memory download, cache program/read, and copy‑back operations—making it suitable for applications that require robust data retention and endurance under extended temperature range.

Key Features

  • Memory Architecture 2.147 Gbit SLC NAND organized as 256M × 8 with page size of (2K + 128) bytes and block size of 64 pages ((128K + 8K) bytes).
  • Performance Read cycle specified at 45 ns and access time listed as 25 ns; random read and page read operations are supported for typical read workflows.
  • Program / Erase Timing Typical page program time is 400 µs (700 µs max), and block erase time is 3.5 ms typical (10 ms max), enabling predictable program/erase latencies.
  • Endurance & Retention Rated for 50K program/erase cycles with an uncycled data retention of 10 years at 55 °C.
  • Data Integrity ECC requirement specified as 8 bit per 512 byte; hardware data protection and program/erase lockout during power transitions are included.
  • Functional Options Supports automatic page 0 read at power‑up, boot from NAND, automatic memory download, cache program/read, copy‑back, two‑plane operation and EDO mode.
  • Power & Interface Operates from a 1.8 V supply (range 1.7 V–1.95 V) with command/address/data multiplexed on DQ port and parallel x8 I/O.
  • Package & Mounting Surface‑mount TSOPI‑48 package (12 mm × 20 mm body, 0.5 mm pitch) optimized for compact board integration.
  • Automotive Qualification Grade: Automotive with AEC‑Q100 qualification and operating temperature range from −40 °C to 105 °C.
  • Compliance RoHS compliant.

Typical Applications

  • Automotive Storage Reliable non‑volatile storage for automotive systems requiring AEC‑Q100 qualification and extended temperature operation.
  • Solid‑State File Storage Suitable for embedded file storage and boot NOR/NAND replacement where SLC endurance and data retention are required.
  • Voice and Image Recording Designed for voice recorders and still‑camera image memory with page program and cache read/program operations to support media storage workflows.
  • Embedded Boot and Firmware Storage Supports automatic page 0 read at power‑up and boot from NAND functionality for firmware and system boot storage.

Unique Advantages

  • Automotive‑grade qualification: AEC‑Q100 qualification and −40 °C to 105 °C operation provide the reliability needed for vehicle electronics.
  • High endurance: 50K P/E cycle rating supports long service life in write‑intensive embedded applications.
  • Long data retention: Specified 10 years uncycled retention at 55 °C for reliable long‑term storage.
  • Predictable program/erase performance: Typical page program time of 400 µs and block erase time of 3.5 ms enable deterministic maintenance windows for flash management.
  • Comprehensive functional set: Boot support, automatic memory download, cache and copy‑back operations simplify system boot and update flows.
  • Low‑voltage operation: 1.7 V–1.95 V supply range supports low‑power system designs while maintaining standard NAND functionality.

Why Choose F59D2G81KA-45TIAG2N?

The F59D2G81KA-45TIAG2N combines SLC NAND reliability and endurance with automotive qualification to meet demanding embedded storage requirements. Its organization, timing characteristics, and functional features (boot support, cache operations, two‑plane operation) make it suitable for designers who need robust, long‑lived non‑volatile memory in compact TSOPI packaging.

Choose this device when your design needs predictable program/erase behavior, long data retention, and automotive‑grade thermal and qualification margins—helping reduce risk and simplify flash management in production systems.

Request a quote or submit an inquiry to get pricing and availability for the F59D2G81KA-45TIAG2N. Our team can provide delivery timelines, volume pricing, and technical support information to help you evaluate this device for your next design.

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