F59D2G81XA-45TG2B
| Part Description |
SLC NAND Flash, 2Gbit (256M × 8), 1.8V, x8, 45ns, 48‑pin TSOPI |
|---|---|
| Quantity | 1,048 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | TSOPI-48 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 2 Gbit | Access Time | 25 ns | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 1.7V ~ 1.95V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C – 70°C | Write Cycle Time Word Page | 200 µs | Packaging | 48-TSOPI | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 256M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59D2G81XA-45TG2B – SLC NAND Flash, 2Gbit (256M × 8), 1.8V, x8, 45ns, 48‑pin TSOPI
The F59D2G81XA-45TG2B is a 2.147 Gbit single-level cell (SLC) NAND Flash memory organized as 256M × 8, optimized for reliable non-volatile storage in embedded designs. It implements an asynchronous parallel NAND interface and is ONFI 1.0-compliant for standardized command and data exchange.
Designed for high-performance I/O operations with a low pin-count 48‑pin TSOPI package and a 1.8V supply range (1.7V–1.95V), this device targets applications that need durable program/erase endurance, predictable page/block timing, and straightforward board-level integration.
Key Features
- Memory Architecture — 2.147 Gbit SLC NAND organized as 256M × 8 with a page size of 2,176 bytes (2,048 + 128) and block size of 64 pages (128K + 8K bytes).
- Performance — Asynchronous I/O operation with device ordering at 45 ns; datasheet array timings include read page ≈30 µs, program page ≈200 µs (typ), and erase block ≈2 ms (typ).
- Interface & Command Set — Parallel NAND interface using a multiplexed 8‑bit I/O bus and standard control signals (CE#, CLE, ALE, WE#, RE#); supports the ONFI NAND Flash Protocol and advanced command features including program/read page cache modes and two‑plane commands (available with ECC off only).
- Power & Voltage — Low-voltage operation with a supply range of 1.7V to 1.95V, suitable for 1.8V system rails.
- Reliability & Endurance — SLC technology with endurance rated to 100,000 program/erase cycles and uncycled data retention up to 10 years (JESD47G-compliant retention statement included in datasheet).
- Hardware Signals & Protection — Ready/Busy# (R/B#) for hardware operation completion monitoring and WP# for device-level write protection; operation status byte provides software-level status and pass/fail conditions.
- Package & Temperature — Surface-mount TSOPI-48 package (12 mm × 20 mm body, 0.5 mm pin pitch) with commercial operating temperature range 0 °C to +70 °C.
- Additional Functional Modes — One-time programmable (OTP) mode, programmable drive strength, read unique ID, and internal data move operations within a plane.
Typical Applications
- Embedded firmware and code storage — Non-volatile storage for firmware images and boot code where SLC endurance (100,000 P/E cycles) and retention are required.
- High-performance I/O systems — Use in designs that require asynchronous high-throughput read/write operations and page cache modes for efficient data transfers.
- Data logging and commercial devices — Reliable data storage in commercial-temperature equipment that benefits from long data retention and robust program/erase cycles.
Unique Advantages
- Proven SLC endurance: 100,000 program/erase cycles and 10-year uncycled retention provide predictable lifetime behavior for firmware and critical data.
- ONFI 1.0 compliance: Standardized command and data interfaces simplify integration with host controllers that support the ONFI NAND protocol.
- Low-voltage, low-pin integration: 1.7V–1.95V operation in a 48‑pin TSOPI package supports compact board layouts with a low pin-count interface.
- Hardware and software status reporting: R/B# and an operation status byte enable both hardware and software methods for detecting operation completion and error conditions.
- Advanced command features: Program/read page cache modes, OTP, programmable drive strength, and internal plane data moves allow flexible performance and security trade-offs.
- Field upgrade path: Standardized pinout and low pin-count design facilitate future density upgrades without board redesign.
Why Choose F59D2G81XA-45TG2B?
The F59D2G81XA-45TG2B balances SLC reliability with ONFI-standardized interface and advanced NAND command features to serve embedded applications requiring durable, low-voltage non-volatile storage. Its documented timing (read/program/erase), hardware status signals, and package options make it suitable for designs that prioritize predictable endurance and straightforward integration.
Engineers specifying this device benefit from clear array performance figures, robust program/erase endurance, and a compact TSOPI footprint compliant with commercial temperature ranges, enabling long-term maintainability and scalability within ESMT’s F59D2G81XA series.
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