F59D4G81KA-45BCG2R
| Part Description |
SLC NAND Flash, 4Gbit, 1.8V, x8, 45ns, 67-ball BGA |
|---|---|
| Quantity | 597 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | BGA-67 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 4 Gbit | Access Time | 20 ns | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 1.7V ~ 1.95V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C – 70°C | Write Cycle Time Word Page | 400 µs | Packaging | 67-BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 512M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59D4G81KA-45BCG2R – SLC NAND Flash, 4Gbit, 1.8V, x8, 45ns, 67-ball BGA
The F59D4G81KA-45BCG2R is a single-level cell (SLC) NAND flash memory device organized as 512M × 8 for a total density of 4.295 Gbit. Built for parallel x8 interface operation at a 1.8 V supply (1.7 V–1.95 V), this device provides block- and page-oriented flash storage for embedded and consumer applications.
Designed for solid-state file storage, voice recording, image file memory and boot/firmware storage, the device combines SLC endurance and longevity with features for in-system boot, automatic memory download and cache operations to support high-reliability non-volatile storage requirements.
Key Features
- Memory Architecture — 4.295 Gbit organized as 512M × 8 with one plane and 2048 blocks per die. Page size is (4K + 256) bytes with a data register of the same size for 4352-byte transfers.
- Performance — Read cycle timing of 45 ns and random read up to 25 µs (max). Page program typical time is 400 µs (700 µs max); block erase typical time is 3.5 ms (10 ms max).
- Cell Technology & Endurance — SLC (1 bit per cell) NAND flash with endurance rated at 60K program/erase cycles and uncycled data retention of 10 years at 55°C.
- Power — Low-voltage supply Vcc = 1.8 V (operating range 1.7 V–1.95 V) to support low-power system designs.
- Interface & Operation — Command/address/data multiplexed DQ port with parallel x8 interface, supporting cache program/read, copy-back, EDO mode, and automatic program/erase sequences.
- Boot & System Features — Supports automatic Page 0 read at power-up, boot-from-NAND capability and automatic memory download for firmware and boot-storage applications.
- Reliability & Data Integrity — ECC requirement noted as 8 bit per 512 bytes, hardware data protection and program/erase lockout during power transitions.
- Package & Temperature — 67-ball BGA surface-mount package (BGA-67); commercial operating temperature range 0°C to 70°C. RoHS compliant.
Typical Applications
- Solid-State File Storage — High-density SLC NAND for reliable storage of user data and file systems in consumer and embedded devices.
- Image and Voice Recording — Page-oriented programming and high endurance suited for still-camera image buffering and voice-record modules.
- Boot and Firmware Storage — Automatic Page 0 read at power-up and boot-from-NAND support enable firmware and bootloader storage for embedded systems.
- Portable Devices — Low-voltage 1.8 V operation and BGA surface-mount packaging for compact, power-efficient designs requiring non-volatile storage.
Unique Advantages
- SLC Endurance and Retention — 60K program/erase cycles and 10-year retention at 55°C provide longevity for applications with frequent updates.
- System-Level Boot Support — Automatic Page 0 read at power-up and boot-from-NAND capability simplify firmware loading and system bring-up.
- Flexible Program and Read Modes — Cache program and cache read operations, copy-back and EDO mode enable efficient data movement and higher throughput in system designs.
- Compact, Industry-Friendly Package — 67-ball BGA surface-mount package supports space-constrained boards while maintaining robust connectivity.
- Defined ECC and Data Protection — Documented ECC requirement (8 bit/512 byte) and hardware data protection features assist integration into systems requiring data integrity measures.
Why Choose F59D4G81KA-45BCG2R?
The F59D4G81KA-45BCG2R positions itself as a reliable SLC NAND flash option combining industry-standard parallel x8 interfacing, small-package mounting and features tailored for boot and file-storage use cases. Its SLC cell technology, defined endurance and retention metrics, and support for cache and boot operations make it suitable for embedded systems and consumer products that require robust non-volatile storage.
Engineers and procurement teams seeking a 4 Gbit SLC NAND device with low-voltage operation, clear ECC guidance and a compact BGA footprint will find the F59D4G81KA-45BCG2R appropriate for designs that demand durability, predictable performance and system-level boot capabilities.
Request a quote or submit an inquiry to obtain pricing, lead-time and availability for the F59D4G81KA-45BCG2R for your next design. Our team can provide technical documentation and volume support information on request.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A