F59D4G81KA-45BCIG2R
| Part Description |
SLC NAND Flash, 4Gbit, 1.8V, x8, 45ns, Industrial |
|---|---|
| Quantity | 1,403 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | BGA-67 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 4 Gbit | Access Time | 20 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 1.7V ~ 1.95V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 400 µs | Packaging | 67-BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 512M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59D4G81KA-45BCIG2R – SLC NAND Flash, 4Gbit, 1.8V, x8, 45ns, Industrial
The F59D4G81KA-45BCIG2R is a single-level cell (SLC) NAND flash memory device from ESMT, organized as 512M × 8 for a total of 4.295 Gbit. Designed for industrial applications, it provides a parallel x8 interface at 1.8V (1.7 V–1.95 V) with JEDEC qualification and a compact 67-ball BGA package.
This device supports automatic program and erase operations and is suited for high-density non-volatile storage roles such as solid-state file storage, voice recording, image file memory for still cameras, and embedded boot/firmware storage where endurance, retention and industrial temperature range are required.
Key Features
- Memory & Organization 4.295 Gbit capacity organized as 512M × 8 with a page size of (4K + 256) bytes and block size of 64 pages = (256K + 16K) bytes. The device contains 2,048 blocks per die (LUN) and a single plane architecture.
- Technology & Endurance SLC NAND offering 1 bit per cell with endurance rated at 60K program/erase cycles and an uncycled data retention specification of 10 years at 55°C.
- Performance Read cycle rated at 45 ns (speed grade -45); access time listed as 20 ns. Typical page program time is 400 µs (typical) with up to 700 µs maximum; block erase time is 3.5 ms (typical) with up to 10 ms maximum.
- Power & Interface Low-voltage operation at 1.8V (range 1.7 V–1.95 V) with a parallel command/address/data multiplexed DQ port and x8 IO configuration for straightforward system integration.
- System Reliability & Data Integrity Hardware data protection features including program/erase lockout during power transitions, ECC requirement of 8 bit/512 Byte, and support for automatic page 0 read at power-up and boot-from-NAND options.
- Advanced Functional Features Supports cache program/read, copy-back and cache operations, automatic program and erase sequences, and up to four partial program cycles in the same page (NOP = 4).
- Package & Temperature Surface-mount 67-ball BGA package (industrial grade) with operating temperature range of −40°C to 85°C, suited for industrial environments.
Typical Applications
- Solid-state storage — High-density non-volatile storage for embedded file systems and removable storage appliances where SLC endurance and retention are required.
- Imaging devices — Image file memory for still cameras and similar products that need reliable block/program operations and long-term data retention.
- Voice and media recording — Storage for voice recorders and media devices leveraging automatic program/erase and cache program capabilities.
- Embedded boot and firmware storage — Boot-from-NAND support and automatic page-0 read at power-up make this device suitable for firmware and boot media in embedded systems.
Unique Advantages
- SLC endurance and retention — 60K program/erase cycle rating and 10-year uncycled data retention at 55°C provide a strong reliability profile for long-life applications.
- Low-voltage operation — 1.8V supply (1.7 V–1.95 V) reduces system power domain complexity while maintaining NAND functionality.
- Industrial temperature range — −40°C to 85°C operating range supports deployment in rugged and industrial environments.
- Comprehensive system features — Built-in protections (program/erase lockout on power transitions), ECC requirement guidance, and boot support streamline integration and system reliability.
- Compact BGA package — 67-ball BGA surface-mount package saves PCB area while providing a robust mounting solution for industrial boards.
Why Choose F59D4G81KA-45BCIG2R?
The F59D4G81KA-45BCIG2R balances industrial-grade resilience with NAND-specific performance characteristics. Its SLC architecture, JEDEC qualification, and proven program/erase timing specs make it appropriate for applications that demand reliable non-volatile storage over extended lifecycles and temperature ranges.
Designed for embedded system integrators and product teams requiring scalable, long-retention flash, this ESMT device offers practical system-level features—boot support, hardware protections, and cache operations—that simplify firmware and storage implementations while meeting industrial requirements.
Request a quote or submit an inquiry to receive pricing and availability for the F59D4G81KA-45BCIG2R. Our team can provide lead-time information and support for integration into your designs.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
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