F59D2G81KA-45BCG2N
| Part Description |
SLC NAND Flash, 2 Gbit, 1.8V, x8, 45ns, 67-ball BGA |
|---|---|
| Quantity | 1,336 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | BGA-67 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 2 Gbit | Access Time | 25 ns | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 1.7V ~ 1.95V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C – 70°C | Write Cycle Time Word Page | 400 µs | Packaging | 67-BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 256M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59D2G81KA-45BCG2N – SLC NAND Flash, 2 Gbit, 1.8V, x8, 45ns, 67-ball BGA
The F59D2G81KA-45BCG2N is a 2 Gbit SLC NAND Flash memory organized as 256M × 8, designed for high-density non-volatile data storage. It implements a parallel x8 I/O interface and operates from a 1.8V supply (1.7 V to 1.95 V), making it suitable for embedded storage in commercial applications.
Built with NAND architecture and single-level cell (SLC) technology, this device targets solid-state file storage, media capture, and other systems requiring reliable page/block-level program and erase operations while offering hardware protection and boot support features.
Key Features
- Memory Architecture 2 Gbit organized as 256M × 8 with a 2K+128 byte page size and 64 pages per block (128K+8K bytes block size).
- Voltage and Interface Low-voltage operation from 1.7 V to 1.95 V (nominal 1.8 V) with a parallel command/address/data multiplexed DQ port (x8).
- Performance Random page read up to 25 µs (max) and a 45 ns read cycle; ordering identifies the 45 ns speed grade for fast read-cycle throughput.
- Program & Erase Timing Typical page program time 400 µs (typ) with 700 µs (max), and block erase typical 3.5 ms (typ) with 10 ms (max).
- Reliability & Endurance SLC technology with 50K program/erase cycles and uncycled data retention specified as 10 years at 55°C.
- Data Integrity ECC requirement of 8 bits per 512 bytes; hardware data protection and program/erase lockout during power transitions.
- Advanced NAND Functions Supports cache program/read, copy-back, two-plane operation, EDO mode, automatic page 0 read at power-up, and boot-from-NAND support.
- Package & Mounting Commercial-grade surface-mount 67-ball BGA package (BGA-67) with operating range 0 °C to 70 °C. RoHS compliant.
Typical Applications
- Solid-State File Storage — High-density non-volatile storage for embedded file systems and removable media.
- Consumer Imaging Devices — Image file memory for still cameras and capture devices requiring reliable block/page operations.
- Voice Recording & Audio Storage — Persistent storage for voice data and audio files in consumer and portable recorders.
- Boot & Firmware Storage — Boot-from-NAND support and automatic page-0 read at power-up for system firmware and boot code.
Unique Advantages
- SLC Endurance and Retention: 50K program/erase cycles and 10-year data retention at 55°C deliver long-term data reliability for demanding embedded storage.
- Low-Voltage Operation: 1.7 V–1.95 V supply range (nominal 1.8 V) supports low-power systems and modern platform voltage domains.
- Flexible Page/Block Architecture: 2176-byte pages and 64-page blocks simplify large-file writes and block-level management in firmware.
- Built-in Data Protection: Hardware data protection and program/erase lockout during power transitions reduce risk of data corruption during power events.
- Performance Options: 45 ns read-cycle speed grade and 25 µs random page read provide options for designs needing faster read responsiveness.
- Boot & Operational Convenience: Features such as automatic page 0 read at power-up and boot-from-NAND support streamline system initialization.
Why Choose F59D2G81KA-45BCG2N?
The F59D2G81KA-45BCG2N delivers a balanced combination of SLC endurance, practical performance, and low-voltage operation in a compact BGA package for commercial embedded designs. Its page/block organization, built-in data protection, and boot-friendly features make it suitable for storage, imaging, audio recording, and firmware-anchored applications where reliable non-volatile memory is required.
This device is well suited for designers seeking a robust, time-proven NAND Flash option with clear endurance and retention specifications, hardware protection mechanisms, and a commercial temperature range for mainstream consumer and industrial use cases.
Request a quote or submit a product inquiry to obtain pricing, availability, and support for integrating the F59D2G81KA-45BCG2N into your design.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A